Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
62 (1987), S. 3441-3443
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Highly conducting silicon layers of less than 500 A(ring) in thickness have been formed following the implantation of 12-keV antimony or 10-keV arsenic and subsequent annealing at 700 °C for 15 min. Minimum resistivities of 2.2×10−4 Ω cm for antimony and 6.5×10−4 Ω cm for arsenic at a dose of 1×1015 cm−2 are obtained, with corresponding peak electrical activities of ∼4.8×1020 cm−3 and ∼1.6×1020 cm−3, respectively. Both correspond to metastable states well above the equilibrium solid solubilities. Whereas the arsenic activity remains almost unchanged for anneals of up to ∼300 min, the higher antimony activity decreases, but remains above that of the arsenic.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.339310
| Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |
