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Epitaxial CaF2 on GaAs(100) after ambient transfer with arsenic overlayer (1987)

Sinharoy, S. ; Lin, Y. F. ; Rieger, J. H.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 61 (1987), S. 1655-1656

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: By using an amorphous overlayer of arsenic, it is shown that a GaAs(100) wafer, with a layer of GaAs grown on it by molecular-beam epitaxy, can be satisfactorily transferred in the laboratory atmosphere from one ultrahigh vacuum chamber to another. The clean GaAs(100) surface is retrieved in the second chamber by low-temperature (350 °C) evaporation of the arsenic overlayer. An epitaxial layer of CaF2 was grown successfully on a smooth GaAs surface retrieved in this manner. This technique offers an opportunity to investigate GaAs/epifluoride/GaAs structures by transferring samples between the GaAs growth chamber and the fluoride growth chamber without subjecting them to a higher temperature (600 °C) cleaning process.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.338056

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