Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
61 (1987), S. 4920-4922
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Single-crystal layers of ZnSe have been grown on GaP and GaAs substrates in a hydrogen transport system. By the use of the H2 bypass flow, the growth rate versus substrate temperature characteristics are found to be modified. The growth on GaP (111)B substrates is limited by thermodynamic mass transport and that on GaP (100) substrates by the kinetics of the surface chemical reaction. ZnSe layers grown on the GaAs (100) face have larger growth rates and smoother surface morphologies than those on GaP (100). This result may originate from the lattice parameter mismatch between the epitaxial layers and the substrates.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.338359
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