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Thermal evolution of molybdenum disilicide grown on (100) silicon under ultrahigh vacuum conditions (1986)

Perio, A. ; Torres, J.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 59 (1986), S. 2760-2764

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Under ultrahigh vacuum conditions, molybdenum disilicide has been obtained by electron gun evaporation of molybdenum on heated monocrystalline silicon substrate. Depending on the deposition temperature, the resulting thin film is composed of tetragonal disilicide or of a mixture of hexagonal and tetragonal disilicide. Preferential orientations of MoSi2 have been observed for both phases grown on (100) silicon substrate heated at 550, 650, and 750 °C. Further annealing does not improve the crystallographic orientation of the materials.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.337048

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