Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
59 (1986), S. 3448-3453
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The interface of GaAs–Pd was investigated on an atomic scale by a time-of-flight (TOF) atom-probe field ion microscope (FIM). It was found that Pd reacts strongly with Ga even at room temperature to form a stable PdGa compound. Depending upon heat treatment conditions, several types of Pd–(Ga, As) ternary compounds were also formed. A thin layer (less than a few monolayers) of As was quite often detected at the outermost surface layer when the interface was heated up to 400 °C. Above 400 °C only the most stable PdGa phase was observed at the interface. At a temperature range between 200 and 400 °C, the segregated Ga phase was also found beneath the As layer. The interfacial reactions can be understood by the following two processes: (1) Pd atoms diffuse into the GaAs substrate to form a stable Pd–Ga bond and (2) As, whose bonding with Ga is broken, becomes loose and migrates to the surface and desorbs.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.336813
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