ISSN:
1089-7623
Source:
AIP Digital Archive
Topics:
Physics
,
Electrical Engineering, Measurement and Control Technology
Notes:
Initial growth temperature of SiC polycrystalline films by simultaneous irradiation of energetic, isotopical mass-separated 28Si− and 12C+ ions was investigated. The kinetic energies of both ions were 200 eV and deposition temperatures were room temperature, 400 °C, and 600 °C. The SiC films deposited at ∼600 °C showed the infrared absorption peak at 802 cm−1 and weak ring patterns on reflection high-energy electron diffraction measurements, characteristics for crystalline SiC. With x-ray photoelectron spectroscopy, transmission electron microscopy, and transmission electron diffraction, the films were nearly stoichiometric and the initial growth of nanocrystalline 3C–SiC at ∼600 °C under ion irradiation was observed. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1150369