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Effect of trapped ions in a gated time-of-flight apparatus (1993)

Martus, K. E. ; Orient, O. J. ; Chutjian, A.

[S.l.] : American Institute of Physics (AIP)

Review of Scientific Instruments 64 (1993), S. 1754-1757

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ISSN: 1089-7623

Source: AIP Digital Archive

Topics: Physics , Electrical Engineering, Measurement and Control Technology

Notes: A three-mesh gate is used in a time-of-flight (TOF) apparatus to analyze the velocity of positive ions. Test results and a theoretical description are presented of an effect arising from trapping ions between meshes of a two-gate TOF velocity analyzer. The entrapped ions produce a side peak in the TOF spectra corresponding to faster ions. The onset and relative height of the side peak is dependent on the gating voltage and risetime of the pulsing electronics, while the relative intensity depends upon the velocity being sampled and the ratio of the gate width to duration.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1144005

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