ISSN:
1089-7623
Source:
AIP Digital Archive
Topics:
Physics
,
Electrical Engineering, Measurement and Control Technology
Notes:
A new method is reported to measure the position and concentration of trap levels in semi-insulating materials where the regular deep level transient spectroscopy method is not applicable. In the proposed method, a transient space charge limited current (TSCLC) associated with the trap levels is measured using a capacitance balanced square wave voltage source, a voltage limiter-amplifier and a double box car averager. The TSCLC method is demonstrated on a p-type Y2.01Ca0.99Ge0.91Fe4.09O12 magnetic garnet sample ρ300=107 Ω cm. The trap level is located at 0.36 eV above the valence band edge and the concentration of the trapped holes is found to be 1013–1015 cm−3.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1139929
