ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Visible and deep UV Raman measurements have been applied to investigate the structuraland electrical properties of stacking disordered 3C-SiC crystals. It is found that free-carrier densityshows the significant dependence on the density of stacking faults in 3C-SiC. The density of stackingfaults has been estimated from the comparison between experimentally obtained Raman spectra andRaman intensity profiles simulated using one-dimensional lattice models considering the disorder inbond polarizability arrangement
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.343.pdf