ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
In the present work, the carbonization of porous silicon for the subsequent 3C-SiCgrowth has been systematically studied. The effect of temperature and acetylene flow-rate on thechemical state of the surface and structure relaxation was studied. It was found that the porousnano-crystalline morphology is unstable and tends to recrystallize in temperature range typical of3C-SiC growth on Si (10000C-13000C). The carbonization impedes recrystallization at 10000C, butat 13000C the full recrystallization takes place. Pyrolytic amorphous graphite-like carbon was foundon porous silicon carbonized at temperature and with acetylene flow-rate above critical values
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.167.pdf