ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
It is of great importance to investigate the electrical properties of SiC p-channel MOSFETsfor development of SiC CMOS technology. In the present report, we investigated dependences ofelectrical properties of the SiC p-channel MOSFETs on SiC poly-types. The on-state characteristics(channel mobility, threshold voltage, and temperature dependences) for the 4H- and 6H-SiCp-channel MOSFETs showed similar behavior, although those of 4H-SiC n-channel MOSFETs areusually quite different from those of 6H-SiC. These results might be caused by the similar SiC MOSinterface state distribution around the valence band edge
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.783.pdf