ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The I-V characteristics of p+n 4H-SiC diode formed by Al ion implantation have beeninvestigated as a function of annealing temperature. Al ions are implanted at the elevated sampletemperature of 500 oC in order to fabricate p-type doped layer on the n-type epitaxial layer, grown onn+ 4H-SiC substrate. The implanted sample is annealed using electron bombardment annealingsystem in the annealing temperature ranging from 1700 to 1900 oC. The Al implanted sample,annealed below 1800 oC shows the deteriorated I-V characteristics in which the forward currentincludes the resistive current components and the reverse current is in the order of 10-4 A/cm2. Thep+n diode formed by annealing at 1900 oC reveals the forward current without extra-currentcomponents and the reverse current as low as 10-6 A/cm2. It is suggested that the annealing above1900 oC is effective in reducing the implantation-induced defect at the interface between Al implantedp+ layer and the underlying n-type epitaxial layer
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.1023.pdf
