ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We fabricate pn-junction diode on p-type 4H-SiC(0001), in which n-type region is formedby N ion implantation at room temperature (total dose: 2.4 x 1015 /cm2, thickness: 300 nm) andsubsequently annealed for 5 min using electron bombardment annealing system (EBAS). Theroot-mean-square (RMS) surface roughness and sheet resistance (Rs) for N ion implanted region,annealed at 1900 oC is estimated to be 0.7 nm and 940 4/sq., respectively. The alloyed Ni ohmiccontact to N ion implanted layer, annealed at 1900 oC, shows the contact resistance (Rc) of8.3 x 10-5 4cm2. The forward drop voltage at 100 A/cm2 and on-resistance of mesa-type pn junctiondiode is estimated to be 3.1 V and 1.3x10-2 4cm2. The reverse bias leakage current of that is2.2 x 10-5 A/cm2 at 100 V. It is demonstrated that EBAS is able to apply for the fabrication ofpn-junction diode
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.929.pdf
Permalink