ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We developed EBAS-100, which is available to 100 mm diameter SiC wafer, for post ionimplantation annealing in order to realize silicon carbide (SiC) device with large volume production.EBAS-100 is able to perform the rapid thermal process due to the vacuum thermal insulation andsmall heat capacity of susceptor. Electrical power consumption density was 18.8 Wh/cm2 forEBAS-100, which is one-third smaller than that of our previous system (EBAS-50). Samples used inthis study were p-type epitaxial 4H-SiC (0001) grown on 8o off SiC substrate. P+ ions (total dose; 2.0 x1016 /cm2, thickness; 350 nm) were implanted into SiC samples at 500 oC. The root-mean-square(RMS) of surface roughness is estimated to be 0.21 nm for the sample annealed at 1700 oC for 5 min,which is much smooth than that of the sample annealed by the conventional RF inductive annealing(RMS value: 5.97 nm). Averaged sheet resistance (RS) value of 63.3 ohm/sq. is obtained with theexcellent non-uniformity of RS (+/- 1.4 %) for the diameter of 76.0 mm
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.807.pdf
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