Electronic Resource
s.l. ; Stafa-Zurich, Switzerland
Solid state phenomena
Vol. 131-133 (Oct. 2007), p. 553-558
ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
The effect of phonon confinement and impurity doping in silicon nanowires (SiNWs)synthesized by laser ablation were investigated. The diameter of SiNWs was controlled by thesynthesis parameters during laser ablation and the subsequent thermal oxidation. Thermal oxidationincreases the thickness of the SiNWs’ surface oxide layer, resulting in a decrease in their crystallineSi core diameter. This effect causes a downshift and asymmetric broadening of the Si optical phononpeak due to phonon confinement. Boron doping was also performed during the growth of SiNWs.Local vibrational modes of boron (B) in silicon nanowires (SiNWs) synthesized by laser ablationwere observed at about 618 and 640 cm–1 by Raman scattering measurements. Fano broadening dueto coupling between discrete optical phonons and the continuum of interband hole excitations wasalso observed in the Si optical phonon peak. These results prove that B atoms were doped in theSiNWs
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/24/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.131-133.553.pdf
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