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Self Adaptive FEM Simulation of Reverse Biased pn-Junctions. (1990)

Kornhuber, Ralf ; Roitzsch, Rainer

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Publication Date: 2014-02-26

Description: The potential distribution of reverse biased pn-junctions can be described by a double obstacle problem for the Laplacian. This problem is solved by a self adaptive Finite Element Method involving automatic termination criteria for the iterative solver, local error estimation and local mesh refinement. Special attention is paid to the efficient resolution of the geometries typically arising in semiconductor device simulation. The algorithm is applied to a reverse biased pn- junction with multi-step field plate and stop- electrode to illustrate its efficiency and reliability.

Keywords: ddc:000

Language: English

Type: reportzib , doc-type:preprint

Format: application/pdf

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