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  • Articles: DFG German National Licenses  (13)
  • 1995-1999  (13)
  • 1995  (13)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 5214-5217 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We describe an optically driven x-ray diode which can generate nanosecond, hard x-ray pulses at a repetition rate of 300 Hz, with high stability and a synchronization capability of 1–2 ns. The system is suitable for nanosecond time resolved diffraction experiments. Using this system diffraction patterns from liquids and polycrystalline solids were recorded. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5616-5624 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Al-Ga interdiffusion induced by Si focused ion beam implantation and subsequent rapid thermal annealing (RTA) was investigated in an Al0.3Ga0.7As/GaAs superlattice structure with equal 3.5 nm barrier and well widths. Si++ was accelerated to either 50 or 100 kV and implanted parallel to sample normal at doses ranging from 1013 to 1015/cm2. The effect of rapid thermal anneal of 10 s at 950 °C was characterized by the secondary ion mass spectrometry technique. In the implanted region, the interdiffusion causing compositional mixing was significantly enhanced by the Si implantation. An ion dose as low as 1×1014/cm2 results in a two-order of magnitude increase in the interdiffusion coefficient, to a value of 4.5×10−14 cm2/s, producing a mixing effectiveness of ∼90%. In contrast, the RTA-only case produces an interdiffusion coefficient of 1.3×10−16 cm2/s and very little mixing. A strong depth dependence of the mixing process was observed at 100 keV implantation energy, with a "pinch-off'' (more heavily mixed) region being formed at a certain depth. It is noticed that the depth where this enhancement occurred is not associated with either the maximum concentration of Si ions or of vacancies. Instead, it coincides with the positive maximum of the second derivative of the vacancy profile, which in turn represents a maximum in the vacancy injection generated by the presence of a transient vacancy concentration gradient. Based on these findings, a theoretical model was developed using vacancy injection as responsible for mixing. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 179-181 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs quantum well (QW) lasers with distributed Bragg reflection (DBR) Al0.3Ga0.7As/GaAs superlattice gratings have been fabricated by the single-step, maskless focused ion beam (FIB) mixing. 200 keV Si++ FIB implantation with a beam diameter of ∼60–70 nm and a dose of 1014 cm−2 was used to obtain localized compositional mixing. The DBR grating period was 350 nm, corresponding to a third order grating matched to the emission from the 30 nm wide QW. Lasing operation was examined by optical pumping. With a pumping power 1.6× the threshold value, lasing modes were observed near 827 nm, with a spacing of 3 A(ring) and a linewidth of 1.5 A(ring). © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 99 (1995), S. 8831-8842 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 99 (1995), S. 15023-15027 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 28 (1995), S. 358-362 
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: 10 ps 193 nm pulses have been used to generate characteristic Cu Kα X-ray pulses with less than 50 ps duration and 300 Hz repetition rate. Both light and X-ray pulses are highly synchronized and are used in pump-probe experiments that monitor the effect of temperature on a gold (111) single-crystal lattice with picosecond time resolution.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 14 (1995), S. 1289-1291 
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Theoretical and applied genetics 91 (1995), S. 907-914 
    ISSN: 1432-2242
    Keywords: Glycine max ; Soybean mosaic virus (SMV) ; Gene-dosage dependent resistance ; Epistasis ; Inheritance
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract Soybean [Glycine max (L.) Merr.] PI486355 is resistant to all the identified strains of soybean mosaic virus (SMV) and possesses two independently inherited resistance genes. To characterize the two genes, PI486355 was crossed with the susceptible cultivars ‘Lee 68’ and ‘Essex’ and with cultivars ‘Ogden’ and ‘Marshall’, which are resistant to SMV-G1 but systemically necrotic to SMV-G7. The F2 populations and F2∶3 progenies from these crosses were inoculated with SMV-G7 in the greenhouse. The two resistance genes were separated in two F3∶4 lines, ‘LR1’ and ‘LR2’, derived from Essex x PI486355. F1 individuals from the crosses of LR1 and LR2 with Lee 68, Ogden, and ‘York’ were tested with SMV-G7 in the greenhouse; the F2 populations were tested with SMV-G1 and G7. The results revealed that expression of the gene in LR1 is gene-dosage dependent, with the homozygotes conferring resistance but the heterozygotes showing systemic necrosis to SMV-G7. This gene was shown to be an allele of the Rsv1 locus and was designated as Rsv1-s. It is the only allele identified so far at the Rsv1 locus which confers resistance to SMV-G7. Rsv1-s also confers resistance to SMV-G1 through G4, but results in systemic necrosis with SMV-G5 and G6. The gene in LR2 confers resistance to strains SMV-G1 through G7 and exhibits complete dominance. It appears to be epistatic to genes at the Rsv1 locus, inhibiting the expression of the systemic necrosis conditioned by the Rsv1 alleles. SMV-G7 induced a pin-point necrotic reaction on the inoculated primary leaves in LR1 but not in LR2. The unique genetic features of the two resistance genes from PI486355 will facilitate their proper use and identification in breeding and contribute to a better understanding of the interaction of SMV strains with soybean resistance genes.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Theoretical and applied genetics 90 (1995), S. 526-533 
    ISSN: 1432-2242
    Keywords: Haynaldia villosa ; Repeated sequence ; In situ hybridization ; Gene transfer
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract A species-specific repeated sequence, pHvNAU62, was cloned from Haynaldia villosa, a wheat relative of great importance. It strongly hybridized to H. villosa, but not to wheat. In situ hybridization localized this sequence to six of seven H. villosa chromosome pairs in telomeric or sub-telomeric regions. Southern hybridization to whea-H. villosa addition lines showed that chromosomes 1V through 6V gave strong signals in ladders while chromosome 7V escaped detection. In addition to H. villosa, several Triticeae species were identified for a high abundance of the pHvNAU62 repeated sequence, among which Thinopyrum bassarabicum and Leymus racemosus produced the strongest signals. Sequence analysis indicated that the cloned fragment was 292 bp long, being AT rich (61%), and showed 67% homology of pSc7235, a rye repeated sequence. Isochizomer analysis suggested that the present repeated sequence was heavily methylated at the cytosine of the CpG dimer in the genome of H. villosa.It was also demonstrated that pHvNAU62 is useful in tagging the introduced 6VS chromosome arm, which confers a resistance gene to wheat powdery mildew, in the segregating generations.
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1432-2242
    Keywords: Wheat ; Haynaldia villosa ; Alien translocation ; Powdery mildew resistance ; In situ hybridization
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract Several Triticum aestivum L.-Haynaldia villosa disomic 6VS/6AL translocation lines with powdery mildew resistance were developed from the hybridization between common wheat cultivar Yangmai 5 and alien substitution line 6V(6A). Mitotic and meiotic C-banding analysis, aneuploid analysis with double ditelosomic stocks, in situ hybridization, as well as the phenotypic assessment of powdery mildew resistance, were used to characterize these lines. The same translocated chromosome, with breakpoints near the centromere, appears to be present in all the lines, despite variation among the lines in their morphology and agronomic characteristics. The resistance gene, conferred by H. villosa and designated as Pm21, is a new and promising source of powdery mildew resistance in wheat breeding.
    Type of Medium: Electronic Resource
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