Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
59 (1986), S. 3481-3488
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Epitaxial growth of both tetragonal and hexagonal WSi2 in silicon was investigated by transmission electron microscopy. Eight different modes of WSi2 epitaxy were found to grow in (001), (111), and (011) Si. Variants of WSi2 epitaxy were also observed. Crystallographic analyses were performed to find possible matches between atoms in overlayer and silicon at WSi2/Si interfaces. Interfacial structures were analyzed. The roles of the lattice match in the growth of epitaxial WSi2 and MoSi2, which are similar in various aspects, are explored. The effects of anharmonicity in the interatomic force of overlayer on the heteroepitaxial growth and pseudomorphism are discussed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.336818
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