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  • Articles: DFG German National Licenses  (44)
  • 2000-2004  (44)
  • 11
    Electronic Resource
    Electronic Resource
    Optical and electrical properties of nitrogen incorporated amorphous carbon films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2874-2879 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nitrogen incorporated amorphous carbon (a-C:N) films on silicon (111) wafer, quartz, and Ti/C substrates with nitrogen concentration up to 20 at. % are prepared by filtered arc deposition. The nitrogen concentration and area density of the films were measured by Rutherford backscattering. The electrical properties of the films were investigated by Hall electrical measurements. The optical properties of the films were characterized by ultraviolet–visible and infrared reflection spectrometry. Results indicate that the optical band gap and area density of a-C:N films decrease with increasing nitrogen pressure, accompanied with an increase of nitrogen concentration and reflectivity of the films. Furthermore, the influence of nitrogen concentration on the optical band gap of the films is discussed. The dielectric constant, refractive index and absorption coefficient of a-C:N films in infrared region were investigated. The results indicate that the optical constants of a-C:N show considerable variation with wave number and nitrogen content. The variation of optical properties and optical constants of a-C:N films may be due to the development of graphite-like structure with the increasing of nitrogen content in these films. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372271
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  • 12
    Electronic Resource
    Electronic Resource
    Metal–semiconductor–metal GaN ultraviolet photodetectors on Si(111) (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 444-446 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaN metal–semiconductor–metal photoconductive detectors have been fabricated on Si(111) substrates. The GaN epitaxial layers were grown on Si substrates by means of metalorganic chemical-vapor deposition. These detectors exhibited a sharp cutoff at the wavelength of 363 nm and a high responsivity at a wavelength from 360 to 250 nm. A maximum responsivity of 6.9 A/W was achieved at 357 nm with a 5 V bias. The relationship between the responsivity and the bias voltage was measured. The responsivity saturated when the bias voltage reached 5 V. The response time of 4.8 ms was determined by the measurements of photocurrent versus modulation frequency. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.127004
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  • 13
    Electronic Resource
    Electronic Resource
    Thickness-independent electron field emission from tetrahedral amorphous carbon films (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 191-193 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron field emission properties of tetrahedral amorphous carbon films of different thicknesses have been studied. The experimental results indicate that there exists no close relationship between threshold electric field and film thickness. Different field emission models are used to examine the experimental results in order to explain the thickness-independent electron field emission properties. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125699
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  • 14
    Electronic Resource
    Electronic Resource
    Sb-doped SrTiO3 transparent semiconductor thin films (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1676-1678 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optically transparent Sb-doped SrTiO3 thin films with a transmittance higher than 95% in most of the visible region have been grown on SrTiO3 (001) substrate by pulsed laser deposition. The films behave as an n-type semiconductor between 10 K and room temperature. The carrier concentration and mobility of the films at room temperature are ∼5.8×1017 cm−3 and ∼6.4 cm2/V s, respectively. X-ray photoelectron spectroscopy measurement reveals that the delocalized electrons from the Sb dopants give rise to deep impurity levels within the band gap of the parent compound, which are responsible for the electrical conduction observed. The wide band gap and low density of states in the conduction band account for transparency of the films. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1355992
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  • 15
    Electronic Resource
    Electronic Resource
    Evidence for ferroelectric border traps near the SrBi2Ta2O9/Si interface through capacitance–voltage measurement (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 564-566 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A metal–ferroelectric–semiconductor (MFS) structure has been developed by depositing SrBi2Ta2O9 (SBT) films directly on n-type (100) Si by pulsed laser deposition. In the MFS structure, evidence for ferroelectric border traps in the SBT film has been obtained by high-frequency capacitance–voltage (C–V) measurement. When the ramp rate of voltage is higher than 200 mV/s, typical ferroelectric C–V hysteresis loops with the counterclockwise direction are obtained in C–V plots. When the ramp rate is lower than 80 mV/s, the ferroelectric hysteresis loops are replaced by the trap-induced ones with the clockwise direction. This pronounced change results from the fact that more and more border traps in SBT can communicate with the underlying Si. The border-trap density at the ramp rate of 10 mV/s is as high as 1.8×1012 cm−2. Moreover, the width of the hysteresis loops changes linearly with the logarithmic decrease in ramp rate, which is consistent with the ferroelectric border traps communicating with Si by tunneling or a thermally activated process. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.127045
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  • 16
    Electronic Resource
    Electronic Resource
    Starch Granule Size Strongly Determines Starch Noodle Processing and Noodle Quality (2003)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 68 (2003), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: Chemical compositions, physical properties, and suitability for starch noodle making of different granule size fractions from potato and sweet potato starches were studied. The ash content, amylose content, phosphorus content, gel firmness, and freeze-thaw stability of small-size granule fractions(〈 20 μm) were significantly different from those of the large-size granule fractions. The processibility and the qualities evaluated by objective and subjective methods of both dried and cooked starch noodles made from small-size granule fractions were significantly better than those made from their initial starch preparations and much better than those made from the large-size granule fractions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.2003.tb12295.x
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  • 17
    Electronic Resource
    Electronic Resource
    Physicochemical Properties of Starches Obtained from Three Varieties of Chinese Sweet Potatoes (2003)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 68 (2003), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: : Starches isolated from 3 typical types of Chinese sweet potato varieties (XuShu18, SuShu2, and SuShu8) were characterized and compared with starches isolated from potato and mung bean. The 3 sweet potato starches differed in granule size; particle size distribution; protein, lipid, and phosphorus contents; pasting behaviors; swelling patterns; and syneresis. The retrogradation tendencies, measured both by setback ratio and by syneresis, differed for the 3 starches, although the amylose contents were quite similar (19.3 to 20.0%). Physicochemical properties of all 3 types of starches are evidently different from each other and from those of potato and mung bean starches. Keywords: sweet potato, starch, gelatinization, retrogradation, swelling, syneresis
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.2003.tb05690.x
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  • 18
    Electronic Resource
    Electronic Resource
    Recombinant spiked allergen extract (2001)
    Copenhagen : Munksgaard International Publishers
    Allergy 56 (2001), S. 0 
    Details
    ISSN: 1398-9995
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1034/j.1398-9995.2001.056008794.x
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  • 19
    Electronic Resource
    Electronic Resource
    Sulphur concentration of soils and plants and its requirement for ruminants in the Inner Mongolia steppe of China (2001)
    Oxford UK : Blackwell Science Ltd.
    Grass and forage science 56 (2001), S. 0 
    Details
    ISSN: 1365-2494
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: The sulphur status of four soils and 122 forage plants from the Inner Mongolia steppe was determined. The organic sulphur concentration ranged from 17 μg g–1 in the 0·2–0·4 m soil layer to 397 μg g–1 in the topsoil. The mean sulphate-S concentrations were 〈10 μg g–1; greater concentrations were found only in the chernozem soil. Biomass-S accounted for 0·018–0·028 of total S in four soils. Three-quarters of plant samples examined had 〈1·6 g kg–1 S, and 〉0·80 of them had an N:S ratio 〉14:1. More than 0·80 of the plants were deficient in S. There was a close relationship between plant-available soil sulphur concentrations and total plant sulphur concentrations. It was concluded that sulphur deficiency is widespread in the Inner Mongolia steppe and that sulphur fertilizer requirements should be evaluated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2494.2001.00285.x
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  • 20
    Electronic Resource
    Electronic Resource
    Experimental and CFD evidence of multiple solutions in a naturally ventilated building (2004)
    Oxford, UK : Munksgaard International Publishers
    Indoor air 14 (2004), S. 0 
    Details
    ISSN: 1600-0668
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Architecture, Civil Engineering, Surveying , Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1600-0668.2003.00209.x
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