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  • Articles: DFG German National Licenses  (117)
  • 1995-1999  (50)
  • 1990-1994  (41)
  • 1985-1989  (26)
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  • Articles: DFG German National Licenses  (117)
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  • 1
    Electronic Resource
    Electronic Resource
    Adhesion between Te-based alloy films and fluorocarbon sublayers during the ablative hole opening process (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 865-872 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Adhesion between thin Te-based alloy films and fluorocarbon polymer sublayers, prepared by sputtering or plasma polymerization, was investigated by observing the 1 μm-sized ablative hole opening process with a focused laser beam. Interpretations of the mechanisms for the change in energy required for the hole opening and pit geometry were based on the framework of studies of the ablative hole opening process for optical recording. Observations suggest that the molten material flow during the hole opening includes a ductile fracture and a viscous flow of the molten sublayer material as well as of active layer material. Adhesion acts as an energy barrier against the above mentioned flow of molten material during the hole opening process. Since the fluorocarbon films used in the present work had highly cross-linked structures, the adhesion was mainly dominated by the dynamic force of adhesion. Therefore, the hole opening process was mainly affected by the dynamic force of adhesion rather than the static force, which is dominated by the surface energy of the sublayer. There was a good correlation between the dynamic force of adhesion estimated by the peel-off strength and the concentrations of the -CF- and -C-CF- structures estimated from C1s spectra obtained by x-ray photoelectron spectroscopy. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359011
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Giant magnetoresistance related transport properties in multilayers and bulk materials (invited) : The 6th joint magnetism and magnetic materials (MMM)-intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6919-6924 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic comparison of magnetoresistance, Hall effect, thermal conductivity, and thermoelectric power has been made on systems exhibiting giant magnetoresistance (GMR), Co/Cu/Ni(Fe) multilayers, and AgCo granular alloys, for examples. Each property exhibits field dependence characteristic of the GMR and justifies its own merit in characterizing the conduction-electron scattering responsible for the GMR. The comparison was extended to intermetallic compounds such as REGa2 and RECo2 (RE: rare earth element) which also show a large magnetoresistance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358117
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Preparation and properties of III-V nitride thin films (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 2984-2988 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of III-V nitride semiconductors (AlN, GaN, InN), mixed-crystalline films (AlxIn1−xN), and multilayered films (GaN/InN)n were grown by rf magnetron sputtering at low substrate temperatures below 500 °C. These films were characterized by x-ray diffraction, Raman scattering, optical absorption, and electrical measurements; it was proved that they have high crystal quality comparable to the previously reported data obtained by other growth methods. Dependence of the band-gap energy of AlxIn1−xN on composition x was determined. Multilayered films of (GaN/InN) were prepared for the first time; these films showed the characteristic diffusion property to make an ordered-alloy superlattice.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344181
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  • 4
    Electronic Resource
    Electronic Resource
    Epitaxial growth of LiNbO3-LiTaO3 thin films on Al2O3 (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2989-2993 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial thin films of LiNbO3 and LiTaO3 were grown on sapphire substrates by the rf-magnetron sputtering method. Structural characterization was made by several spectroscopic measurements: x-ray diffraction, Raman scattering, and optical absorption. We obtained epitaxial thin films with lattice-mismatched strained layers, without misfit defects which are usually created at the interface. Impurity-ion (Nd3+ and Cr3+) doped films were also grown; these films had larger refractive indices than the pure films. Furthermore, the heteroepitaxial thin films of up to 10 alternating LiNbO3/LiTaO3 layers were successfully grown, and their periodic structures were studied by optical second-harmonic generation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339385
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  • 5
    Electronic Resource
    Electronic Resource
    Valence bands of poly(methylmethacrylate) and photoion emission in vacuum ultraviolet region (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5423-5428 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoion and photoelectron yields were measured for poly(methylmethacrylate) in the photon energy region of 8–40 eV using synchrotron radiation. Further, the valence-band structure was investigated with ultraviolet photoelectron spectra and valence effective Hamiltonian calculations. A significant difference was observed between the photon energy dependencies of photoion and photoelectron yields. The threshold energy for photoion emission was found to be 10.5 eV, while that for photoelectron emission was 8.5 eV, indicating holes created near the valence-band top do not contribute to the ion emission. At the higher-energy region, the ion emission efficiency was found to be enhanced in the photon energy region of 17–28 eV. The difference between the threshold energies of photoion and photoelectron emission and the enhancement of the photoion emission are discussed in conjunction with the valence-band structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351983
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  • 6
    Electronic Resource
    Electronic Resource
    In situ observation of silicon hydrides on Si(100) surfaces during synchrotron-radiation-stimulated Si2H6 gas source molecular beam epitaxy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2364-2366 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon hydrides (SiHn) on the Si(100) surface during synchrotron-radiation (SR) stimulated Si2H6 gas source molecular beam epitaxy has been observed in situ at low temperatures (≤400 °C), by means of infrared reflection absorption spectroscopy using CoSi2 buried metal layer substrates. At high temperatures (400 °C, 370 °C), SiH is a dominant surface species, while with temperature decrease from 275 to 50 °C, the number of SiH decreases, and, on the other hand, SiH2 and SiH3 appear and increase. This result explains the change of reflection high-energy diffraction pattern from 2×1 to 1×1. The SiH in the bulk network has not been observed. SR irradiation on the film at 140 °C after deposition shows that SiH2 and SiH3 are easily decomposed to SiH and that SiH decomposes much more slowly than SiH2 and SiH3. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114346
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  • 7
    Electronic Resource
    Electronic Resource
    Low-threshold continuous-wave room-temperature operation of AlxGa1−xAs/GaAs single quantum well lasers grown by metalorganic chemical vapor deposition on Si substrates with SiO2 back coating (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1179-1181 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate the first room-temperature low-threshold continuous-wave (cw) operation of Al0.3Ga0.7As/GaAs single quantum well (SQW) heterostructure lasers grown by metalorganic chemical vapor deposition (MOCVD) on Si substrates using techniques of SiO2 back coating and thermal cycle annealing. The all-MOCVD-grown SQW lasers on GaAs/Si with etch pit density of 1.5× 107 cm−2 have threshold current as low as 55 mA (1.41 kA/cm2) under cw at room temperature. The SiO2 back coating is effective to obtain excellent current-voltage characteristics. Thermal cycle annealing is also found to improve the crystallinity of GaAs/Si and to contribute to room-temperature cw operation of the lasers on Si substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103519
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  • 8
    Electronic Resource
    Electronic Resource
    Magnetoresistance, Hall effect, and thermoelectric power in spin valves (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5927-5932 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Comparison of the magnetoresistance (MR) on two groups of spin-valve multilayers, NiO/NiFe/Cu/NiFe/Cu/NiO and NiO/NiFe/Cu/NiFe/Cu, has been made in order to investigate the possibility of the enhanced specular scattering at NiO/metal interface. No clear difference in MR between the two systems has been found, suggesting that the enhancement of specular scattering at interfaces is not the origin of the large MR. For the field direction almost perpendicular to the plane, we found a sensitive angular dependence of MR along with a large unidirectional anisotropy. To sort out any specific characteristics of the spin-valve system compared to the multilayers, thermoelectric power and Hall effect have been investigated for the first time. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367457
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  • 9
    Electronic Resource
    Electronic Resource
    Moessbauer spectroscopy and magnetization studies of .alpha.- and .beta.-ruthenium trichloride (1992)
    s.l. : American Chemical Society
    Inorganic chemistry 31 (1992), S. 4570-4574 
    Details
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ic00048a025
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  • 10
    Electronic Resource
    Electronic Resource
    GaN hexagonal microprisms with smooth vertical facets fabricated by selective metalorganic vapor phase epitaxy (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2196-2198 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Selective growth of GaN was performed by low-pressure metalorganic vapor phase epitaxy using a mask-patterned GaN epitaxial layer on a (0001) sapphire substrate. GaN hexagonal microprisms of 5–16 μm in diameter, with smooth vertical facets and no ridge growth, were fabricated on a (0001) sapphire substrate. This vertical {11¯00} facet of GaN was parallel to a {112¯0} face of the sapphire substrate. Both the use of an epitaxial GaN layer on the sapphire substrate and low working pressure contributed to obtaining smooth top and vertical facet surfaces. Also, the stripe structures of GaN were obtained that had a rectangular cross section. Moreover, the selection of the mask-patterning direction was found to be important because of the 30° rotation of the crystallographic orientation between the GaN layer and the sapphire substrate. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119379
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