Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
66 (1995), S. 2804-2806
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A novel diol based metalorganic route has been developed and employed to deposit BaTiO3 films on Si and Pt coated Si substrates. Differential thermal analysis, thermogravimetric analysis, x-ray photoelectron spectroscopy, and x-ray diffraction collectively indicated that BaTiO3 was formed through the reaction of Ba and Ti oxides at approximately 500 °C. The films were single phase, had no crystallographic texture, and contained no detectable impurities. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.113481
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