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  • Articles: DFG German National Licenses  (14)
  • 1995-1999  (14)
Source
  • Articles: DFG German National Licenses  (14)
Material
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    Observation of room temperature surface-emitting stimulated emission from GaN:Ge by optical pumping (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6544-6546 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optically pumped surface-emitting stimulated emission at room temperature was observed from GaN:Ge grown by metalorganic chemical vapor deposition. The sample was optically pumped perpendicularly on the top surface while the stimulated emission was collected from the back colinearly with the pump beam. The cavity was formed by the GaN/air and GaN/sapphire interfaces without any other structure. The stimulated emission was gain guided by the pump beam. The threshold optical pump density for stimulated emission was approximately 2.8 MW/cm2 and the linewidth was 2.5 nm. The emission from GaN:Ge showed a redshift as the pump density increased. The comparison between theoretical calculations and experimental results suggested that many-body interactions can account well for the redshift. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363674
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Infrared properties of AgGaTe2, a nonlinear optical chalcopyrite semiconductor (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 94-99 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The fundamental optical properties of AgGaTe2, a nonlinear optical semiconductor are reported. These properties include birefringence, indices of refraction, infrared transmission, and the temperature dependence of the band gap. The average index for wavelengths greater than several microns was found to be 3.0. The birefringence was found to be rather large and to range from a near band edge value of 0.038 at 1.3 μm to a value of 0.017 at 15 μm. Additionally, native defect related sub-bandgap absorption, photoluminescence, and electrical transport have been studied in these nominally undoped p-type crystals. An activation energy associated with these defects was determined to be 0.3 eV and the corresponding photoluminescence and absorption data showed, respectively, a broad asymmetric emission band centered at 0.8 eV and two bands at 0.95 and 1.01 eV, the absorption band at 0.95 eV being the most intense. The measured properties were utilized to assess the potential of AgGaTe2 for the wavelength conversion processes of second-harmonic generation and degenerate optical parametric oscillation. It was found that AgGaTe2 will not phase match at room temperature. However, it is estimated that mixed crystals of the form AgGa(Se(1−x))Tex)2 for a Te addition of 19% can exceed the conversion efficiency of AgGaSe2 by more than 100%. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370704
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Fermi level control and deep levels in semi-insulating 4H–SiC (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5040-5044 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature dependent Hall effect, optical admittance spectroscopy, and optical absorption measurements of semi-insulating bulk 4H–SiC are reported. Both intentionally vanadium doped material and commercial grade semi-insulating material were investigated. The carrier concentration versus inverse temperature results from Hall effect measurements up to 1000 K indicated the samples were dominated by one of two deep levels near midgap. In addition to the deep donor level of substitutional vanadium, Ec−1.6 eV, we observed another level at Ec−1.1 eV in some samples, indicating that levels other than the vanadium donor can pin the Fermi level in semi-insulating SiC. Optical admittance measurements on the semi-insulating material indicate the presence of levels at Ec−1.73 and 1.18 eV that were previously observed in conducting samples with this technique and we attribute these levels to the same defects producing the 1.1 and 1.6 eV levels seen by Hall effect. Secondary ion mass spectroscopy measurements of dopant and impurity concentrations are reported. Even though vanadium is present in all of these samples, along with other impurities we are at present unable to definitively identify the 1.1 eV level. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371476
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Photovoltaic effects in GaN structures with p-n junctions (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2028-2030 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Large-area GaN photovoltaic structures with p-n junctions have been fabricated using atmospheric pressure metalorganic chemical vapor deposition. The photovoltaic devices typically exhibit selective spectral characteristics with two narrow peaks of opposite polarity. This can be related to p-n junction connected back-to-back with a Schottky barrier. The shape of the spectral characteristic is dependent on the thickness of the n- and p-type regions. The diffusion length of holes in the n-type GaN region, estimated by theoretical modeling of the spectral response shape, was about 0.1 μm. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114776
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  • 5
    Electronic Resource
    Electronic Resource
    Kinetics of photoconductivity in n-type GaN photodetector (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3792-3794 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality ultraviolet photoconductive detectors have been fabricated using GaN layers grown by low-pressure metalorganic chemical vapor deposition on (11⋅0) sapphire substrates. The spectral responsivity remained nearly constant for wavelengths from 200 to 365 nm and dropped sharply by almost three orders of magnitude for wavelengths longer than 365 nm. The kinetics of the photoconductivity have been studied by the measurements of the frequency-dependent photoresponse and photoconductivity decay. Strongly sublinear response and excitation-dependent response time have been observed even at relatively low excitation levels. This can be attributed to redistribution of the charge carriers with increased excitation level. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115385
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Comparison of trimethylgallium and triethylgallium for the growth of GaN (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3272-3274 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaN films grown by low-pressure metalorganic chemical vapor deposition using trimethylgallium and triethylgallium as gallium precursors are compared. The films were characterized by x-ray diffraction, Hall effect, photoluminescence, secondary ion mass spectroscopy, and etch pit density measurements. GaN layers grown using triethylgallium exhibited superior electrical and optical properties and a lower carbon impurity concentration. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120310
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Metalorganic chemical vapor deposition of monocrystalline GaN thin films on β-LiGaO2 substrates (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2116-2118 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the metalorganic chemical vapor deposition growth and characterization of monocrystalline GaN thin films on β-LiGaO2 substrates. The influence of the growth temperature on the crystal quality was studied. The structural, electrical, and optical properties of the films were assessed through scanning electron microscopy, x-ray diffraction, Hall measurements, optical transmission, photoluminescence. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116898
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    Paper (German National Licenses)
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  • 8
    Electronic Resource
    Electronic Resource
    Aluminum gallium nitride short-period superlattices doped with magnesium (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2023-2025 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Short-period superlattices consisting of alternating layers of GaN:Mg and AlGaN:Mg were grown by low-pressure organometallic vapor phase epitaxy. The electrical properties of these superlattices were measured as a function of temperature and compared to conventional AlGaN:Mg layers. It is shown that the optical absorption edge can be shifted to shorter wavelengths while lowering the acceptor ionization energy by using short-period superlattice structures instead of bulk-like AlGaN:Mg. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123744
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    Paper (German National Licenses)
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  • 9
    Electronic Resource
    Electronic Resource
    Determination of the band-gap energy of Al1−xInxN grown by metal–organic chemical-vapor deposition (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 800-802 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ternary AlInN was grown by metal–organic chemical-vapor deposition in the high Al composition regime. The band-gap energy of AlInN ternary was measured by optical absorption spectroscopy at room temperature. The band-gap energy of Al0.92In0.08N is 5.26 eV. The potential application of AlInN as a barrier material for GaN is also discussed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119650
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  • 10
    Electronic Resource
    Electronic Resource
    Visible blind GaN p-i-n photodiodes (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3303-3305 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the growth and characterization of GaN p-i-n photodiodes with a very high degree of visible blindness. The thin films were grown by low-pressure metalorganic chemical vapor deposition. The room-temperature spectral response shows a high responsivity of 0.15 A/W up until 365 nm, above which the response decreases by six orders of magnitude. Current/voltage measurements supply us with a zero bias resistance of 1011 Ω. Lastly, the temporal response shows a rise and fall time of 2.5 μs measured at zero bias. This response time is limited by the measurement circuit. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121631
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