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  • Articles: DFG German National Licenses  (6)
  • 1995-1999  (6)
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  • Articles: DFG German National Licenses  (6)
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  • 1
    Electronic Resource
    Electronic Resource
    Effect of an interlayer on the emission characteristics of a white-light-emitting electroluminescent device with a Pr and Ce doubly doped ZnS phosphor layer (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8717-8724 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated light-emission characteristics of a white-light-emitting electroluminescent device with a doubly doped ZnS:Pr,Ce,F phosphor layer. We found that optimum codoping of Ce enhances the emission characteristics compared to the electroluminescent device with a singly doped ZnS:Pr,F layer. We also found that introducing an additional thin-insulating SixNy interlayer between the lower insulating layer and the phosphor layer significantly stabilizes the aging characteristics and improves the luminous efficiency. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362498
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Electron-paramagnetic-resonance study of the Mn2+ luminescence center in ZnS:Mn powder and thin films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1004-1007 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The number of isolated Mn2+ ions and Mn2+ clusters in ZnS:Mn powder and thin films has been studied using Mn2+ spectra measured at room temperature with an X-band electron-paramagnetic-resonance spectrometer. While the concentration of the isolated Mn2+ ions decreases with increasing Mn concentration, the concentration of the clusters increases. At low Mn concentration, the Mn2+ ion substitutes for the Zn ion in ZnS:Mn in the cubic phase. At high Mn concentrations, where the ZnS powder has a dominant hexagonal phase, the Mn ion still prefers to substitute for Zn in ZnS:Mn at the cubic site rather than at the hexagonal site. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360886
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Decrease of the number of the isolated emission center Mn2+ in an aged ZnS:Mn electroluminescent device (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4253-4257 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We observed a decrease of the number of effective emission centers Mn2+ in the aged ZnS:Mn electroluminescence (EL) devices compared to the fresh EL devices using the electron-paramagnetic-resonance technique. Such phenomena can take place during the operation of the EL device, since the isolated Mn can easily diffuse into another site and forming cluster. Another possible explanation is that Mn2+ changes into Mn1+ or Mn3+ by transferring the electronic charge of the isolated Mn2+ to the neighboring Mn ions via sulfur and/or sulfur vacancy. As a result, luminance is lowered due to the decrease in the number of efficient emission centers of isolated Mn2+. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359887
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Impact of surface properties on the dielectric breakdown for polycrystalline and multilayered BaTiO3 thin films (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 6203-6208 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dielectric reliability for polycrystalline and multilayered BaTiO3 thin films has been evaluated using time-zero and time-dependent dielectric breakdown techniques. The histogram of dielectric breakdown for multilayered BaTiO3 thin films showed a typical Weibull distribution in contrast to a random distribution when compared with polycrystalline BaTiO3 thin films. The measurement resulted in that the 400 nm-thick multilayered BaTiO3 thin film sustained about 105 hour-long operation at 1 MV/cm, showing superior properties when compared with polycrystalline. The smaller leakage current level was obtained for a multilayered BaTiO3 film having a relatively thick underlayer of polycrystalline BaTiO3 film. The value of the breakdown field was smaller at the thicker multilayered BaTiO3 while the distribution of the breakdown widened for thicker film. Analysis of the roughness for the films confirmed that the field breakdown mechanism (e.g., lowering and spreading) is related to the surface roughness of the topmost layer which varies with the thickness of underlying polycrystalline BaTiO3. The reduced leakage current at the thick multilayered BaTiO3 was due to the presence of a wide transition layer between polycrystalline and amorphous BaTiO3. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366505
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Brassinolide affects the rate of cell division in isolated leaf protoplasts of Petunia hybrida (1998)
    Springer
    Plant cell reports 17 (1998), S. 921-924 
    Details
    ISSN: 1432-203X
    Keywords: Key words Brassinosteroid ; Brassinolide ; Protoplast ; Cell division
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract Brassinosteroids are known to promote cell elongation in a wide range of plant species but their effect on cell division has not been as extensively studied. We examined the effect of brassinolide on the kinetics and final division frequencies of regenerating leaf mesophyll protoplasts of Petunia hybrida Vilm v. Comanche. Under optimal auxin and cytokinin conditions, 10–100 nM brassinolide accelerated the time of first cell division by 12 h but had little effect on the final division frequencies after 72–120 h of culture. One micromolar brassinolide showed the same acceleration of first cell division but inhibited the final division frequency by approximately 20%. Under sub-optimal auxin conditions, 10–100 nM brassinolide both accelerated the time of first cell division and dramatically increased the 72- to 120-h final division frequencies. Isolated protoplasts may provide a useful model system to investigate the molecular mechanisms of brassinosteroid action on cell proliferation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002990050510
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Silicon-to-indium tin oxide coated glass bonding for packaging of field emission arrays fabricated on silicon wafer (1999)
    Springer
    Journal of materials science 34 (1999), S. 4711-4717 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract A silicon-to-In2O3:Sn coated glass bonding has been developed for the package of field emission arrays fabricated on the silicon wafer, utilizing a conventional silicon-to- silicon anodic bonding using the glass layer. A 1.8 μm Pyrex #7740 glass layer was deposited on the In2O3:Sn coated glass by an electron beam evaporation. It was confirmed that the composition of the glass layer was nearly the same as that of the bulk Pyrex #7740 glass plate. In this work, bonding the silicon and In2O3:Sn coated glass was achieved at a temperature of 190 °C with an applied voltage of 60 Vdc. A secondary ion mass spectroscopy analysis was used to confirm the modeled bonding kinetics of the silicon-to-In2O3:Sn coated glass.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1004654116591
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    Paper (German National Licenses)
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