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  • 1
    Electronic Resource
    Electronic Resource
    β-Ga2O3 nanowires synthesized from milled GaN powders (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 479-481 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: White-colored materials synthesized by a thermal annealing of milled GaN powders at 930 °C in a nitrogen atmosphere were identified to be monoclinic β-Ga2O3 nanowires by x-ray diffraction and scanning electron microscopy. High-resolution transmission electron microscopy revealed that these nanowires are single nanocrystals, and energy dispersive x-ray indicated that these nanomaterials are free of any metals. In addition, bundles of these crystalline nanowires in the rectangular-pole shape are a few centimeters in length.© 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1435073
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  • 2
    Electronic Resource
    Electronic Resource
    The effect of Al–Ta2O5 topographic interface roughness on the leakage current of Ta2O5 thin films (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2800-2802 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous Ta2O5 thin films were formed by radio-frequency magnetron sputtering at the substrate temperature of 200 °C. The electrical properties of Ta2O5 thin films were investigated as a function of the film thickness. The dominant conduction mechanism transited from the electrode-limited conduction (Schottky emission current) at low field to the bulk-limited conduction (Poole–Frenkel current) at high field. With increasing thickness of the thin films, the surface roughness increased, whereas the transition fields from the electrode-limited to the bulk-limited conduction process decreased. To verify the effect of this surface roughness on the electric conduction mechanism, a two-dimensional numerical simulator, MEDICI, was used to simulate the electric-field distribution at the bulk region of the thin film and the interface region between the thin film and the electrode. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124018
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  • 3
    Electronic Resource
    Electronic Resource
    Silicon-to-indium tin oxide coated glass bonding for packaging of field emission arrays fabricated on silicon wafer (1999)
    Springer
    Journal of materials science 34 (1999), S. 4711-4717 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract A silicon-to-In2O3:Sn coated glass bonding has been developed for the package of field emission arrays fabricated on the silicon wafer, utilizing a conventional silicon-to- silicon anodic bonding using the glass layer. A 1.8 μm Pyrex #7740 glass layer was deposited on the In2O3:Sn coated glass by an electron beam evaporation. It was confirmed that the composition of the glass layer was nearly the same as that of the bulk Pyrex #7740 glass plate. In this work, bonding the silicon and In2O3:Sn coated glass was achieved at a temperature of 190 °C with an applied voltage of 60 Vdc. A secondary ion mass spectroscopy analysis was used to confirm the modeled bonding kinetics of the silicon-to-In2O3:Sn coated glass.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1004654116591
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