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  • 1990-1994  (13)
  • 1955-1959  (1)
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  • 1
    Electronic Resource
    Electronic Resource
    A new route to high-Tc superconducting Bi–Sr–Ca–Cu–O thin films: Improved deposition efficiency and film morphology using ammonia–argon mixtures as the carrier gas (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2769-2771 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly oriented films of the high-Tc superconductor Bi2Sr2CaCu2Ox have been prepared by a low-pressure organometallic chemical vapor deposition process using a mixture of ammonia and argon as the carrier gas together with Sr(dpm)2 (dpm-dipivaloylmethanate), Ca(dpm)2, Cu(acac)2 (acac-acetylacetonate), and triphenylbismuth as the organometallic precursors. By introducing ammonia into the carrier gas, a significant improvement in the volatility and thermal stability of both Sr(dpm)2 and Ca(dpm)2 is observed. Typical required source temperatures for Sr(dpm)2 and Ca(dpm)2 with the introduction of ammonia are about 40–50 °C lower than the source temperatures of the precursors without the introduction of ammonia. Enhancement of source volatility for Cu(acac)2 is also observed. After annealing at 865 °C in flowing oxygen, the films consist predominantly of the Bi2Sr2CaCu2Ox phase and exhibit high preferential orientation of the crystallite c axes perpendicular to the substrate surface. Four-probe resistivity measurements indicate the onset of film superconductivity at ∼110 K and zero resistivity achieved at 74 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351052
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  • 2
    Electronic Resource
    Electronic Resource
    Pulsed organometallic beam epitaxy of complex oxide films (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1503-1505 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the results of a pulsed organometallic beam epitaxy (POMBE) process for growing complex oxide films at low background gas pressure (10−4–10−2 Torr) and low substrate temperature (600–680 °C) using organometallic precursors in an oxygen plasma environment. Our results show that POMBE can extend the capability of organometallic chemical vapor deposition to growing complex oxide films with high precision both in composition and structure without the need for post-deposition oxidation and heat treatments. The growth of phase-pure, highly oriented Y-Ba-Cu-O superconducting oxide films {[Tc (R=0)=90.5 K] and Jc (77 K, 50 K gauss)=1.1×105 A/cm2} is given as an example. Similar to the pulsed laser deposition process, the POMBE method has the potential for in situ processing of multilayer structures (e.g., junctions).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105301
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  • 3
    Electronic Resource
    Electronic Resource
    Weak links and critical current density in Bi2Sr2CaCu2Ox thin films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3886-3889 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetization measurements were performed on epitaxial and textured Bi2Sr2CaCu2Ox thin films deposited on (100) LaAlO3 and MgO substrates. An anomalous dependence of the critical current density derived from magnetization hysteresis measurement on magnetic field is observed. The measured critical current density shows a minimum at a magnetic field (Hm) far below the upper critical field Hc2. The measured Hm in epitaxial films has an exponential dependence on temperature, e−T/T0 (T0∼12.5 K). The anomalous field dependence of critical current density is attributed to the presence of weak links in the films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352875
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  • 4
    Electronic Resource
    Electronic Resource
    Solid phase epitaxy of Bi2Sr2CaCu2Ox superconducting thin films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4080-4082 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial superconducting Bi2Sr2CaCu2Ox (BSCCO) thin films have been formed by solid phase epitaxy from amorphous films deposited by metallorganic chemical vapor deposition. (100) MgO and LaAlO3 single crystals were used as the substrates. After high-temperature annealing in flowing oxygen, the films consist predominantly of the BSCCO (2212) phase and are epitaxial to the LaAlO3 with the c axis perpendicular to the substrate surface. The epitaxial structure of the films is confirmed by x-ray diffraction measurements including θ/2θ and in-plane Φ scans as well as by cross-sectional high-resolution transmission electron microscopy. Four-probe resistivity measurements show that the critical temperature of the film on LaAlO3 is 78 K. The critical current density of the epitaxial layer was one order of magnitude greater than that of textured films on MgO.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352834
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  • 5
    Electronic Resource
    Electronic Resource
    Preparation of high-Tc superconducting Bi-Sr-Ca-Cu-O films by organometallic chemical vapor deposition using second-generation fluorocarbon-based precursors (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2743-2745 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-Tc superconducting Bi-Sr-Ca-Cu-O thin films with good electrical properties and smooth surface morphologies have been prepared by low-pressure organometallic chemical vapor deposition using the new fluorocarbon-based precursors Sr(hexafluoroacetylacetonate)2⋅tetraglyme and Ca(hexafluoroacetylacetonate)2⋅triglyme together with Cu(acetylacetonate)2 and triphenylbismuth [Bi(C6H5)3]. The fluorinated precursors are air-stable and exhibit high, stable volatility even after prolonged heating. X-ray diffraction measurements reveal that the films deposited at 650 °C contain some fluoride phases but no high-Tc phases. However, post-annealing in oxygen produces films composed predominantly of the Bi2Sr2CaCu2Ox phase with high preferential orientation of the crystallite c axes perpendicular to the substrate surface. Four-probe resistivity measurements indicate the onset of film superconductivity at ∼100 K and zero resistivity achieved at 73 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348631
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  • 6
    Electronic Resource
    Electronic Resource
    Organometallic chemical vapor deposition of strontium titanate (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3858-3861 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SrTiO3 thin films were deposited by low-pressure organometallic chemical vapor deposition. Titanium isopropoxide, Sr(dipivaloylmethanate)2, oxygen, and water vapor were used as reactants, and argon was used as a carrier gas. Growth rates ranging from 0.3 to 4.5 μm/h were obtained on (0001) sapphire substrates at 600–850 °C. Highly textured SrTiO3 films with a [111] orientation were obtained at a growth temperature of 800 °C. The growth parameters which influenced the composition, phase stability, morphology, and texture of the thin films were examined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345034
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  • 7
    Electronic Resource
    Electronic Resource
    Formation of oriented high Tc superconducting Bi-Sr-Ca-Cu-O thin films on silver substrates by organometallic chemical vapor deposition (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 976-978 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly oriented thin films of the high Tc Bi-Sr-Ca-Cu-O superconductor have been deposited on silver substrates by low-pressure organometallic chemical vapor deposition. The volatile metalorganic complexes Cu(acetylacetonate)2, Sr(dipivaloylmethanate)2, Ca(dipivaloylmethanate)2, and triphenyl bismuth are used as precursors with N2O as a reactant gas. X-ray diffraction measurements reveal that the films deposited at 625 °C contain a mixture of the Bi2(Sr,Ca)2CuOx and Bi2(Sr,Ca)3Cu2Ox phases. The post-annealed films are predominantly composed of the Bi2(Sr,Ca)3Cu2Ox phase with preferential orientation of the crystallite c axes perpendicular to the substrate surface. Magnetic susceptibility measurements indicate the superconducting onset temperature of the annealed films to be at 80 K. The zero-field critical current density, estimated from magnetization measurements, is ∼3.9×105 A/cm2 at 5.5 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102597
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  • 8
    Electronic Resource
    Electronic Resource
    Metal-organic chemical vapor deposition/open flow thallium annealing route to epitaxial Tl2Ba2Ca2Cu3O10 thin films (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 231-233 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phase-pure epitaxial Tl2Ba2Ca2Cu3O10 thin films have been grown on single crystal (110) LaAlO3 substrates using an improved metal-organic chemical vapor deposition process. First, Ba-Ca-Cu-Ox precursor films are grown on LaAlO3 (110) substrates using Ba(hfa)2⋅tet, Ca(hfa)2⋅tet, and Cu(hfa)2 (hfa=hexafluoroacetylacetonate; tet=tetraglyme) as volatile metalorganic precursors. Thallium is then incorporated into the films during a post-anneal in the presence of a Tl2O3, BaO, CaO, CuO powder mixture at 820 °C for 12 h in a flowing 10% O2/Ar atmosphere. The films have a transport-measured Tc=115 K and Jc=1.5×105 A/cm2 (80 K), while magnetic hysteresis measurements yield Jc=6×105 A/cm2 (77 K). Preliminary surface resistance measurements give Rs=0.35 mΩ at 5 K, 10 GHz.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112638
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  • 9
    Electronic Resource
    Electronic Resource
    Second-harmonic generation of poled BaTiO3 thin films (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1314-1316 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Second-harmonic generation of 1.064 μm incident light was measured on BaTiO3 thin films prepared by metalorganic chemical vapor deposition. Upon corona poling of the film, the second-harmonic signal was significantly enhanced. The second-order nonlinear optical susceptibility, d, of the poled film reaches ∼7.5 times that of the quartz. The enhanced second-harmonic generation shows a very slow decay at room temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108716
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  • 10
    Electronic Resource
    Electronic Resource
    Metalorganic chemical vapor deposition route to epitaxial neodymium gallate thin films (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 3047-3049 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phase-pure epitaxial thin films of the YBa2Cu3O7−δ lattice-matched, low dielectric loss perovskite insulator NdGaO3 have been grown on (110) LaAlO3 substrates by a metalorganic chemical vapor deposition (MOCVD)/post-annealing process. Amorphous Nd-Ga-O films are first prepared by MOCVD using the volatile metalorganic β-diketonate precursors Nd(dpm)3 and Ga(dpm)3 (dpm=dipivaloylmethanate). Subsequent postannealing affords phase pure, highly oriented [(001) and/or (110) orientations perpendicular to the substrate surface] and epitaxial NdGaO3 films as assessed by x-ray diffraction θ-2θ, ω, and φ scans. Cross-sectional high-resolution electron microscopic images show that the epitaxial growth occurs with atomically abrupt film-substrate interfaces and with coexisting NdGaO3 (001) and (110) orientation domains.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108005
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