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  • 11
    Electronic Resource
    Electronic Resource
    Low-threshold operation of hemispherical microcavity single-quantum-well lasers at 4 K (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 443-445 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate low-threshold lasing at 4 K in optically pumped hemispherical In0.2Ga0.8As single-quantum-well microcavities. The incident threshold pump power density is 11 kW/cm2 corresponding to an absorbed power density of about 320 W/cm2, and the measured spontaneous emission factor β is about 0.01.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108928
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  • 12
    Electronic Resource
    Electronic Resource
    Isoelectronic oxygen in II-VI semiconductors (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 91-93 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The properties of isoelectronic oxygen in II-VI semiconductors were studied by photoluminescence measurements. It was found that oxygen in CdTe, CdS, and ZnS can act as an acceptor as well as in ZnSe, and that the acceptor levels of oxygen in CdTe, CdSe, and ZnS are shallower than those of typical acceptors such as Na. Charge transfer from the host lattice to the oxygen atom may play an important role in oxygen acting as an acceptor. Based on the charge-transfer model, it can be qualitatively interpreted that there are two roles of oxygen in II-VI compounds: acting as an acceptor or as a trap, and that they are classified by the ionicity of the compound. We also now understand better the chemical trend of the oxygen-acceptor levels becoming more shallow compared to the typical acceptors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107385
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  • 13
    Electronic Resource
    Electronic Resource
    Photoluminescence characteristics of Se-doped GaInP/AlGaInP double heterostructures grown by metalorganic chemical vapor deposition (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3483-3485 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) characteristics of Se-doped Ga0.5In0.5P/(Al0.5Ga0.5)0.5In0.5P double heterostructure (DH) on GaAs substrates were investigated at room temperature. The PL intensity and the decay time both strongly depend on the cladding-layer carrier density. Up to a carrier density of 2.5×1017 cm−3, the PL intensity increases linearly with carrier density, while the decay time is almost constant. For carrier densities larger than 2.5×1017 cm−3, the PL intensity and the decay time decrease linearly and quadratically with carrier density, respectively. We also studied the PL characteristics of Se-doped Ga0.5In0.5P and (Al0.5Ga0.5)0.5In0.5P single layers on GaAs substrates. We found that the carrier density dependence of DH governed by the cladding layer is similar to that of (Al0.5Ga0.5)0.5In0.5P single layers. These results indicate that a nonradiative interfacial recombination process dictates the DH PL characteristics and that the quality of the cladding layer affects the PL radiative efficiency. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113771
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  • 14
    Electronic Resource
    Electronic Resource
    Gain characteristics of gain-guided II–VI laser diodes (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3893-3895 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the gain characteristics of gain-guided quantum well II–VI laser diodes by measuring the amplified spontaneous emission spectra under several pulsed conditions. The temperature rise during one current pulse affects the gain characteristics and the L-I characteristics. The net modal gain at constant peak current increases with the pulse width. The peak gain for long pulses shows a superlinear dependence on injection current. In this case, the L-I curve is very steep above threshold and sometimes shows an internal quantum efficiency of more than unity. This leads to an underestimation of the internal cavity loss giving a value inconsistent with the one obtained from the gain spectra. With short pulse currents (〈200 ns), the peak gain shows a weak sublinear dependence on injection current. The cavity losses obtained from the gain spectra and the L-I characteristics at short pulses are consistent. As a result, we obtain the intrinsic gain characteristics of gain-guided quantum well II–VI laser diodes. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117561
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  • 15
    Electronic Resource
    Electronic Resource
    Characterization of threading dislocations in GaN epitaxial layers (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3421-3423 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated Si-doped GaN epitaxial layers on a (0001)-sapphire substrate using a HCl vapor-phase etching technique, scanning electron microscopy, atomic force microscopy, and transmission electron microscopy. Three kinds of distinctive etch pits correspond to three different types of threading dislocations, edge, mixed, and screw types. Photoluminescence intensity increases with the decrease in the number of etch pits corresponding to mixed and screw dislocations. The number of etch pits corresponding to edge dislocations, however, did not change. We concluded, therefore, that threading dislocations having a screw-component burgers vector act as strong nonradiative centers in GaN epitaxial layers, whereas edge dislocations, which are the majority, do not act as nonradiative centers. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126666
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  • 16
    Electronic Resource
    Electronic Resource
    Sera from Patients with Multiple Sclerosis React with Human T-Cell Lymphotropic Virus-I GAG Proteins: Western Blotting and Solid-Phase Radioimmunoassay Analyses (1988)
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 540 (1988), S. 0 
    Details
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1749-6632.1988.tb27197.x
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  • 17
    Electronic Resource
    Electronic Resource
    The Regulation of Cholesteryl Ester Metabolism by 17β-Estradiol in Macrophages (1994)
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 748 (1994), S. 0 
    Details
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1749-6632.1994.tb17379.x
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  • 18
    Electronic Resource
    Electronic Resource
    Inhibition of scratching behaviour caused by contact dermatitis in histidine decarboxylase gene knockout mice (2005)
    Oxford, UK; Malden, USA : Munksgaard International Publishers
    Experimental dermatology 14 (2005), S. 0 
    Details
    ISSN: 1600-0625
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract:  A neuronal system dedicated to itch consists of primary afferent and spinothalamic projection neurons. Histamine is thought to be one of the main mediators for the transmission of itch sensation. However, there are little available information on the role of histamine in scratching behaviour and sensory transmission of atopic dermatitis and chronic eczema. In the present study, the role of histamine in scratching behaviour and neural conduction of sensation in the chronic eczema model was investigated by using l-histidine decarboxylase (HDC) gene knockout mice lacking histamine. The chronic contact dermatitis was induced with daily application of diphenylcyclopropenone (DCP) on a hind paw of HDC (+/+) and HDC (–/–) mice for 2 months. The observation of scratching behaviour and the hot-plate test were performed in both mice. Histological studies were performed in the skin and spinal cord tissues. Histological examination revealed that both HDC (+/+) and HDC (–/–) mice displayed the similar extent of inflammatory cell infiltration, hyperplastic epidermis and newly spreading of neuronal processes in the skin tissue. Scratching behaviour was exclusively induced in HDC (+/+) mice, whereas it was barely observed in HDC (–/–) mice. The expression of c-Fos was specifically upregulated in HDC (+/+) mice in lamina I of the spinal dorsal horn following repeated DCP application. Scratching behaviour in chronic contact dermatitis in mice was thought mainly mediated with histamine. The afferent pathway of sensation in chronic contact dermatitis model may connect with the central nervous system through lamina I of the spinal dorsal horn.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.0906-6705.2005.00247.x
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  • 19
    Electronic Resource
    Electronic Resource
    Synthesis, structure, and acetolysis of some fused cyclobutane derivatives (1978)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 100 (1978), S. 2464-2474 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00476a033
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  • 20
    Electronic Resource
    Electronic Resource
    Selenium and zinc doping in Ga0.5In0.5P and (Al0.5Ga0.5)0.5In0.5P grown by metalorganic chemical vapor deposition (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5285-5289 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical properties of Se- and Zn-doped Ga0.5In0.5P and (Al0.5Ga0.5)0.5In0.5P grown by atmospheric pressure metalorganic chemical vapor deposition under a wide range of growth conditions were investigated using van der Pauw–Hall measurements at room temperature. The dopants were hydrogen selenide and dimethylzinc. The samples were prepared so that parasitic conduction in the GaAs substrate just adjacent to the ternary or quaternary layers could be eliminated from the Hall measurement. The carrier concentration of GaInP and AlGaInP increased as the 0.8±0.1th power of the feed amount of dopants for both conductivity types. At a growth temperature around 680 °C, the hole concentration tended to saturate near the 1018 cm−3 level as the amount of dimethylzinc being fed increased. The carrier concentration decreased with increasing growth temperature, with apparent activation energies of 0.95 eV for Se doping and 1.9 eV for Zn doping. The group-V to group-III feed ratio had a weak influence on the carrier concentration. On the other hand, the Hall mobility of the layers grown under the various growth conditions remained almost constant: the electron mobilities of Se-Ga0.5In0.5P and Se-(Al0.5Ga0.5)0.5In0.5P within the carrier concentration range of 1017 〈n〈1018 cm−3 were 950–700 and ∼100 cm2/V s, respectively. The hole mobilities of Zn-Ga0.5In0.5P and Zn-(Al0.5Ga0.5)0.5In0.5P within the carrier concentration range of 1017 〈p〈1018 cm−3 were ∼34 and ∼16 cm2/V s, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343718
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