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  • Articles: DFG German National Licenses  (49)
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  • Articles: DFG German National Licenses  (49)
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Years
  • 11
    Electronic Resource
    Electronic Resource
    Retarded and enhanced dopant diffusion in silicon related to implantation-induced excess vacancies and interstitials (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1834-1840 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of the lattice defects induced by silicon-ion implantation on the B, P, As, and Sb diffusivities is investigated after annealing between 700 and 900 °C. The nature and depth position of the residual implantation defects in undoped samples is determined by the analysis of the rocking curves obtained by triple-crystal x-ray diffraction and transmission electron microscopy. In particular, besides the interstitial dislocation loops and clusters below the original amorphous-crystal interface, the epitaxial regrowth of the amorphized silicon leaves a vacancy-rich surface layer and a deeper region enriched in interstitials. These regions correspond to those where Monte Carlo simulations of defect production foresee excess point defects. Accordingly, as the dopant is located in correspondence with the vacancy or interstitial clusters, different behaviors of anomalous diffusion are observed. In the deep region where an interstitial excess is present, B and P show marked enhanced diffusion, while only a small enhancement is exhibited by As and Sb. On the contrary, retarded diffusivity for B and light enhancement for As and Sb are observed in the surface layer. These different trends are consistent with the different accepted contributions of vacancies and interstitials to the diffusion mechanisms of the investigated dopants.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338026
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  • 12
    Electronic Resource
    Electronic Resource
    Interaction between point defects and dislocation loops as the phenomenon able to reduce anomalous diffusion of phosphorus implanted in silicon (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 98-104 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phosphorus was implanted at doses below amorphization threshold in virgin silicon and in silicon containing interstitial dislocation loops. The loops were formed by high-dose Si+ implantation and 900 °C, 30 min annealing. Triple-crystal x-ray diffraction and junction depth measurements combined with secondary ion mass spectrometry were used for the analysis of implant defects and the determination of P distribution, respectively. Annealings were carried out in furnace in the range between 600 and 900 °C, and by electron beam at 1000 °C for 10 s. The results obtained show that the presence of loops strongly reduces the phosphorus anomalous diffusion. This phenomenon is the consequence of the absorption by the loops of the interstitial excess coming from dissolution of the clusters produced by the P implant. The influence of the loop position with respect to the P distribution on the extent of P diffusivity is analyzed and discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343382
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  • 13
    Electronic Resource
    Electronic Resource
    X-ray reflection properties of annealed silicon single crystals : Proceedings of the 4th international conference on synchrotron radiation instrumentation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 907-910 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We present a series of x-ray reflectivity measurements performed on annealed Czochralski grown silicon (ACS) crystals in the energy range E〈50 keV using sealed tube sources. To analyze the origin of the enhanced reflectivity of this material compared to perfect, FZ-grown silicon, double and triple crystal diffractometer measurements were carried out. The results are discussed with regard to the application of ACS for monochromatization of synchrotron radiation in the mentioned energy range.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143775
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  • 14
    Electronic Resource
    Electronic Resource
    Growth of an inverse tetragonal distorted SiGe layer on Si(001) by adding small amounts of carbon (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3440-3442 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si1−x−yGexCy layers have been grown on Si(001) substrates with molecular beam epitaxy and investigated with transmission electron microscopy and x-ray diffraction. We show that it is possible to adjust the strain in pseudomorphic SiGe layers by adding small amounts of carbon. A simple linear extrapolation between the different lattice constants opens the possibility to predict the SiGeC structure in dependence on the carbon content. It is possible to grown epitaxial SiGeC layers with up to 2% carbon. Larger carbon concentrations lead to a crystallographic degradation of the layers. We were able to grow the first pseudomorphic SiGeC layer on Si(001) that is under tensile stress. These layers exhibit a lattice plane spacing in growth direction smaller than that of silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111235
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  • 15
    Electronic Resource
    Electronic Resource
    Independent determination of composition and relaxation of partly pseudomorphically grown Si-Ge layers on silicon by a combination of standard x-ray diffraction and transmission electron microscopy measurements (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2051-2053 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The concentration of Ge and the relaxation of partly pseudomorphically grown thin SiGe layers on Si can be found independently by a combination of standard x-ray double-crystal diffractometry (DCD) and transmission electron microscopy (TEM). DCD and TEM determine the lattice constant variations of the netplanes parallel and perpendicular to the surface from the angular distance between substrate and layer peak and from the average distance of misfit dislocations or the distance of Moiré fringes, respectively. The method is demonstrated for three samples with low, medium, and high Ge content.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109476
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  • 16
    Electronic Resource
    Electronic Resource
    Epitaxial growth of Pr2O3 on Si(111) and the observation of a hexagonal to cubic phase transition during postgrowth N2 annealing (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 671-673 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate the epitaxial growth of hexagonal Pr2O3(001) on Si(111), with x-ray ω-scan full width at half maximum values as low as 0.06°, which is comparable with Si substrates. We find that a phase transition takes place during the anneal of the as-grown films in N2 below the growth temperature. The annealed films display a cubic structure isomorphic to manganese oxide, (111) oriented but 180° rotated about the Si(111) surface normal. The phase transition can be due to nitrogen incorporation. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1389509
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  • 17
    Electronic Resource
    Electronic Resource
    Self-organization during Si1−yCy alloy layer growth on Si(001) using homogeneous coevaporation (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 231-235 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that the formation of self-organized pseudosuperlattices during homogeneous epitaxial growth of Si1−yCy on Si(001) is a fundamental phenomenon not limited to special growth techniques. For samples grown at higher temperatures, and therefore, with higher concentration of nonsubstitutional carbon, we find contrast variations in cross-sectional transmission electron microscopy, roughly periodic in the growth direction in epitaxial Si1−yCy alloy layers. The periodicity is a monotonic function of growth temperature and growth rate. Although the final explanation of this phenomenon remains an open question, we are able to rule out several possible effects. These structures do not reflect a modulation in the substitutional C content, the formation of the C-rich SinC phases, or the segregation of nonsubstitutional C-containing defect complexes up to a certain saturation level. Rather, we show that the layers formed during the different growth processes contain different amounts of carbon. There is no critical size of the C-containing defect complexes independent of growth conditions that could lead to the formation of the observed structures. The variation of the periodicity with growth rate and temperature is similar to surface diffusion processes with an activation energy of 0.94±0.04 eV, close to the value for Si adatom diffusion on a Si(001) surface. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365862
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  • 18
    Electronic Resource
    Electronic Resource
    Comparison of the thermal stability of Si0.603Ge0.397/Si and Si0.597Ge0.391C0.012/Si superlattice structures (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 6134-6140 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The annealing behavior of pseudomorphic Si0.603Ge0.397/Si and Si0.597Ge0.391C0.012/Si superlattice structures was studied in the temperature range between 750 °C and 900 °C. Carbon incorporation of 1.2% changes the thermal stability of SiGe structures significantly. It suppresses plastic relaxation due to an effective dislocation pinning. No relaxation of the SiGeC sample was observed during annealing up to 875 °C for 3 h. For comparison the SiGe sample relaxed at 800 °C. Carbon strongly increases the interdiffusion of Ge and Si. The activation energy of this diffusion process for a Ge content of 40% decreases from about 4.8 eV for the pure SiGe to about 2.0 eV with an additional C content of 1.2% assuming a neglectable diffusion of the carbon. This leads to a distinct modification of the Ge profile in the investigated temperature range. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364361
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  • 19
    Electronic Resource
    Electronic Resource
    SARCOIDOSIS IN EUROPE: A COOPERATIVE STUDY (1976)
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 278 (1976), S. 0 
    Details
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1749-6632.1976.tb47044.x
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  • 20
    Electronic Resource
    Electronic Resource
    X-ray diffraction studies of annealed Czochralski-grown silicon. I. Double-crystal diffractometry (1993)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 26 (1993), S. 185-191 
    Details
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: X-ray reflection properties are reported of annealed Czochralski-grown silicon (ACS) single crystals at photon energies between 8 and 50 keV, studied by double- and triple-crystal diffractometry (DCD and TCD, respectively) and with X-radiation from sealed-tube sources. The report is divided into two parts. In this paper (paper I), the results of double-crystal topography and rocking-curve measurements are discussed in detail with regard to the application of ACS for the monochromatization of synchrotron X-radiation in the above-mentioned energy range. The analysis of the defects which enhance the reflectivity of ACS compared with that of perfect float-zone-grown silicon, carried out by TCD measurements and transmission electron microscopy, is presented in the following paper (paper II). [Zaumseil, Joksch & Zulehner (1993). J. Appl. Cryst. 26, 192–197].
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0021889892009956
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