Library

X
Your search history is empty.
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Elemental maps of Amoeba proteus by a scanning proton microprobe
    Amsterdam : Elsevier
    Nuclear Inst. and Methods in Physics Research, B 54 (1991), S. 156-159 
    Details
    ISSN: 0168-583X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0168-583X(91)95506-9
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    An electron spin resonance study of the reactions of lipid peroxyl radicals with antioxidants (1990)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 94 (1990), S. 7185-7190 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100381a043
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Solid phase epitaxy of stressed and stress-relaxed Ge-Si alloys (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1768-1773 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Solid phase epitaxy of 3500-A(ring)-thick GexSi1−x (0.04≤x≤0.12) films on (100) Si substrates has been investigated. The thickness of regrown layers increased linearly with annealing time in the temperature range of 475–575 °C. The regrowth rates of stressed alloys were less than those of pure Si, while stress-relaxed alloys have larger rates than Si. The difference in regrowth rates was explained by the activation-strain tensor model (Aziz, Sabin, and Lu, to be published in Phys. Rev. B). The first element of the activation-strain tensor obtained in this experiment was in excellent agreement with that deduced by Aziz et al. For low Ge concentrations (x〈0.08), the recrystallized region was of good crystalline quality. However, threading dislocations were observed in a stressed Ge0.1Si0.9 alloy after complete recrystallization. During the regrowth at 550 °C, the Ge-Si alloy first regrew coherently up to 300 A(ring), above which threading dislocations started to nucleate. On the other hand, no dislocations were detected in the regrown layer of a stress-relaxed Ge0.1Si0.9 alloy sample.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351212
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Characterization by Raman scattering, x-ray diffraction, and transmission electron microscopy of (AlAs)m(InAs)m short period superlattices grown by migration enhanced epitaxy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 308-310 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report growth of (InAs)1(AlAs)1 and (InAs)2(AlAs)2 strained layer superlattices by migration enhanced epitaxy. The samples were grown on InP (001) substrates and characterized by Raman spectroscopy, x-ray diffraction, and transmission electron microscopy. Satellite peaks in the x-ray data confirm the intended periodicity and indicate the presence of some disorder in the monolayer sample. The energies of the zone folded and quantum confined optic phonons are in reasonable agreement with calculations based on one-dimensional elastic continuum and linear chain models.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352139
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Investigations on nanocrystalline Fe78B13Si9 alloys by positron annihilation spectroscopy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5124-5129 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline Fe78B13Si9 alloys with nanoscale grain sizes prepared by the crystallization method have been studied by positron lifetime and Doppler-broadened line-shape measurements. The results obtained are different from those on amorphous or coarse-grained crystalline alloys with the same composition. When the grain sizes are clearly smaller than the mean positron diffusion length (L+(approximately-equal-to)100 nm), saturation trapping and annihilation of the positrons in the samples should occur at traps within the interfaces. There are two kinds of defects in the interfaces of the nanocrystalline FeBSi alloys, i.e., the free volumes (the size of which is slightly smaller than that of the amorphous counterpart) and the microvoids. The dependence of grain sizes on the type of interface defects and structure-sensitive properties has also been studied by positron spectroscopy. The measurements and comparison of the mean positron lifetime τ¯ and the Doppler parameter S on the nanocrystalline, amorphous, and coarse-grained crystalline alloys have given a satisfactory explanation for the relationship between the structure-sensitive properties, grain sizes, and crystalline states.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352042
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Nonequilibrium computer simulation of a salt solution (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 92 (1990), S. 5491-5498 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A nonequilibrium computer simulation is performed to investigate the relaxation of a realistic polar solvent near a rapidly dissociating ion pair. The time evolution of the reaction coordinate, the ultrashort time scale changes in solvation energy and solvent forces, the local density response, the heating of certain librational degrees of freedom, and the time-dependent polarization are studied during the first 125 fs of the reaction. It is found that the relaxation behaviors in the anionic and cationic shells are very different. On average, the solvation process under study takes about 30-40 fs to break the original cage. After another 50 fs, the solvated ion pair reforms a new metastable structure, which feeds energy back into the reacting system to break the cage further. This procedure is apparently repeated many times until dissociation is complete. The results obtained in this work provide a graphic picture of some of the features of ultrashort dynamics of ionic photodissociation reactions in a polar medium.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.458528
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Multiphoton ionization vs multiphoton dissociation: Competition between photoionization and dissociation in CO (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 92 (1990), S. 4272-4276 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The competition between photoionization and spontaneous dissociation involving the 3Π states of CO has been investigated both experimentally and theoretically. In this study we analyzed the mass and kinetic energy spectra of the photofragments generated after irradiating CO with a line narrowed (≈0.75 cm−1) tunable ArF* laser (λ≈193 nm) and calculated the cross section (3.2 Mb) for photoionizing the c 3Π Rydberg state of CO at the excitation energy. The basic conclusions of this study are that the interaction between the 3Π Rydberg states and the 3Π valence states near 12.8 eV causes rapid (picosecond time scale or faster) dissociation of CO which impedes photoionization and that multiphoton dissociation completely dominates multiphoton ionization at laser power densities up to at least 30 GW/cm2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.457786
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Power losses of soft magnetic composite materials under two-dimensional excitation (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 4403-4405 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Soft magnetic composite materials produced by powder metallurgy techniques can be very useful for construction of low cost small motors. However, the rotational core losses and the corresponding B–H relationships of soft magnetic composite materials with two-dimensional rotating fluxes have neither been supplied by the manufacturers nor reported in the literature. This article reports the core loss measurement of a soft magnetic composite material, SOMALOY™ 500, Höganäs AB, Sweden, under two-dimensional excitations. The principle of measurement, testing system, and power loss calculation are presented. The results are analyzed and discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369798
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Photoemission study of the effect of thermal annealing on Cs2O/Si(111) surfaces (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3787-3791 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Cs2O overlayers with different thickness were prepared by simultaneous oxygen–cesium adsorption on Si(111) at room temperature. Photoelectron spectroscopy and work-function measurements have been used to study the Cs2O/Si surfaces as a function of annealing temperature. The results show that the interaction of the Cs2O overlayer with the substrate is weak. The Cs2O species is sensitive to x-ray radiation, forming a new species on the top surface. The Cs2O/Si surfaces exhibit a negative electron affinity with a work-function value of 0.85±0.1 eV until the Cs2O species decomposes completely. After Cs2O disappears, both Cs–O and Si–O bonds are dominant on the surfaces with a work function of about 1.2 eV. For further annealing, the oxygen bonded to cesium gradually transfers to Si due to Cs desorption. The thickness of the SiO2 overlayer formed after Cs desorption is dependent on the mount of oxygen in the Cs2O overlayer. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1405133
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Current-density dependence of activation energy in high-Tc superconductor HgBa2Ca2Cu3O8+x (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6398-6401 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The real and imaginary parts of the ac susceptibility of high-Tc superconductor HgBa2Ca2Cu3O8+x were measured as a function of temperature in different ac fields and frequencies at a fixed dc field. The current-density dependence of activation energy was obtained in terms of nonlinear diffusion equation of vortices. The relaxation of the current density and the exponent μ of the glassy phase were deduced from the relation between the activation energy and the current density. In addition, the pinning energy and critical current density were estimated. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359113
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...