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  • Articles: DFG German National Licenses  (11)
Source
  • Articles: DFG German National Licenses  (11)
Material
Years
  • 1
    Electronic Resource
    Electronic Resource
    High mobility two-dimensional hole gas in an Al0.26Ga0.74As/GaAs heterojunction (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1834-1835 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have obtained two-dimensional hole gas with low temperature mobility as high as 3.8×105 cm2 V−1 s−1 at a density of 1×1011 cm−2. The sample was grown on (311)A orientation. We give arguments to show that (100) orientation is not the optimum orientation for the growth of high purity materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337227
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Effects of carrier mass differences on the current-voltage characteristics of resonant tunneling structures (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1793-1795 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that the current-voltage characteristics of resonant tunneling structures are drastically influenced by the difference of electronic effective masses between the electrodes and the quantum well. In particular, if the mass in the well is larger than that in the emitter, the current peak is shifted to lower voltages, relative to the more conventional case of equal masses. This situation is illustrated experimentally with GaAs/AlAs/GaAs heterostructures, in which Γ electrons emitted from GaAs tunnel resonantly through the AlAs X point, where the mass is considerably heavier.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103102
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Resonant tunneling through X-valley states in GaAs/AlAs/GaAs single-barrier heterostructures (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1555-1557 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Clear negative differential resistance has been observed in a GaAs/AlAs/GaAs single-barrier heterostructure due to the presence of a quasi-bound state associated with the X-point profile. This surprising result is due to the fact that although the Γ-point profile of this heterostructure is a simple single tunneling barrier, the X-point profile actually constitutes a quantum well some 0.3 eV deep lying about 0.2 eV above the Γ point of GaAs. The experimental evidence is a sharp cutoff in conductance at about 0.36 V bias, characteristic of tunneling via a confined state.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102242
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Temperature dependence of the electronic coherence of GaAs-GaAlAs superlattices (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2545-2547 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have shown that the coherence length of electrons in a 55-A(ring)-period GaAs-GaAlAs superlattice does not depend strongly on temperature in the range 5–292 K, varying from 17 periods at 5 K to a minimum of nine periods at room temperature. The quantum coherence was determined by photocurrent spectroscopy experiments that exploit the formation of Stark ladders in superlattices under electric fields.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102882
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Inelastic tunneling in AlAs-GaAs-AlAs heterostructures (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 977-979 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Current-voltage measurements in AlAs-GaAs-AlAs heterostructures under hydrostatic pressure show that inelastic tunneling through the XAlAs-ΓGaAs discontinuity is reduced as the thickness of the AlAs layers is decreased. This reduction makes possible large peak-to-valley current ratios in resonant tunneling devices with thin AlAs barriers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100046
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Inelastic tunneling in (111) oriented AlAs/GaAs/AlAs double-barrier heterostructures (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2133-2135 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AlAs/GaAs/AlAs double-barrier heterostructures grown along the (111) crystal axis show a factor of two improvement in the peak-to-valley ratio compared to samples grown in the (100) orientation. A structure consisting of 2.8 nm barriers and an 8 nm well shows a peak-to-valley ratio much better than any published results on (100) oriented structures with similar well and barrier layers. This result is interpreted in terms of the increased effective mass for carriers tunneling inelastically via the AlAs X-point barrier. An increased mass leads to a reduction in the barrier transmission probability and, therefore, a decrease in the leakage current due to inelastic tunneling.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101149
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Electric-field tuning of the Rabi splitting in a superlattice-embedded microcavity (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 803-805 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have demonstrated comprehensive electric field tuning of the Rabi splitting between the excitonic and photonic modes of a superlattice-embedded microcavity. Using photocurrent spectroscopy to measure the coupling between the modes, we have tuned the microcavity to the maximum possible splitting. We have observed a marked increase in the splitting from 4.5 to 11.5 meV, due to the electric-field enhancement of the superlattice exciton's oscillator strength and the oscillator strength's subsequent decrease due to the quantum confined Stark effect. As well, we have determined the oscillator strength for the exciton, finding good agreement with theoretical and experimental values. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1495901
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    Paper (German National Licenses)
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  • 8
    Electronic Resource
    Electronic Resource
    Feasibility of room-temperature operation of tunable coupled-quantum-well lasers (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2189-2191 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have calculated the gain of laser heterostructures whose active regions consists of two strongly coupled quantum wells subjected to an electric field. The results demonstrate that by using two 40-A(ring) GaAs wells separated by an 11-A(ring) Ga0.7Al0.3As barrier a field-induced wavelength tunability of over 7 nm is possible at room temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110549
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    Paper (German National Licenses)
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  • 9
    Electronic Resource
    Electronic Resource
    Optoelectronic devices based on type II polytype tunnel heterostructures (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 3153-3155 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe a new family of optoelectronic devices based on the unique properties of combinations of semiconductor tunnel junctions with type II polytype heterostructures. A typical light-emitting device structure consists of AlSb (thin barrier)/InAs(quantum well)/AlSb(thin barrier) structure clad by AlInAsSb emitter and GaSb collector. The emission source is the intersubband radiative transition between the first two subbands in the InAs well. Since the conduction-bank minimum of InAs is energetically lower than the valence-band maximum of GaSb, the device can be designed in such a way that electrons are injected only into the higher subband and extracted out only from the lower subband, both via tunneling, leading to an intraband population inversion and highly efficient radiative transitions. The same operation principle can be applied to design detector structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106726
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    Paper (German National Licenses)
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  • 10
    Electronic Resource
    Electronic Resource
    Tunable coupled-quantum-well laser controlled by an electric field (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2971-2973 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose a novel field-effect semiconductor laser whose wavelength can be tuned by an electric field parallel to the growth direction of two tightly coupled quantum wells in the active region. We have demonstrated the concept by optically pumping a laser heterostructure whose active region consisted of two 50 A(ring) GaAs wells separated by a 20 A(ring) Ga0.77Al0.23As potential barrier, in which, at 5 K, we have achieved tuning of the stimulated emission by more than 7 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106780
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    Paper (German National Licenses)
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