Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
66 (1995), S. 323-325
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have realized by cleaved edge overgrowth a two-dimensional electron gas system in a one-dimensional lateral superlattice consisting of 100 periods of 120 A(ring) GaAs/20 A(ring) AlGaAs. These devices exhibit nonlinear I–V, including negative differential resistance, at high electric fields. We demonstrate, by monitoring the changes in the two-dimensional electron density, that the nonlinear I–V is due to high field induced electron trapping. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.113532
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