Bibliothek

X
feed icon rss

Ihre E-Mail wurde erfolgreich gesendet. Bitte prüfen Sie Ihren Maileingang.

Leider ist ein Fehler beim E-Mail-Versand aufgetreten. Bitte versuchen Sie es erneut.

Vorgang fortführen?

Exportieren
Filter
  • Digitale Medien  (3)
  • 2000-2004  (2)
  • 1980-1984  (1)
  • 1965-1969
  • 2004  (2)
  • 1980  (1)
Datenquelle
Materialart
  • Digitale Medien  (3)
Erscheinungszeitraum
  • 2000-2004  (2)
  • 1980-1984  (1)
  • 1965-1969
Jahr
Schlagwörter
  • 1
    Digitale Medien
    Digitale Medien
    Molecular characterization of a 10-kDa buckwheat molecule reactive to allergic patients’ IgE (2004)
    Oxford, UK : Munksgaard International Publishers
    Allergy 59 (2004), S. 0 
    Details
    ISSN: 1398-9995
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Medizin
    Notizen: Background:  Using the sera from buckwheat (BW)-allergic patients, several putative causative molecules were reported. However, few molecules were determined on the molecular structure. We demonstrated in 2000 that the major allergen with 24 kDa (BW24KD) is a legumin-like storage protein.Objective:  The aim of this study was to isolate and characterize further a major allergen with 10 kDa by molecular cloning.Methods and results:  Buckwheat allergens were identified by immunoblotting analysis using sera from 14 allergic and two nonallergic individuals. We identified a protein with 10 kDa (BW10KD) that reacted with immunoglobulin E (IgE) more strongly than with IgG and IgA in 57% of the allergic patients but not with IgE in nonallergic individuals. Analyses were performed by N-terminal amino acid sequencing and molecular cloning. Physiological significance was assessed by an immunoblotting experiment showing that the reactivity of an allergic patient's serum IgE to BW10KD was competitively inhibited by natural BW extracts.Conclusion:  Molecular cloning experiments indicated that BW10KD as a BW allergen was a member of the 2S-albumin multigene family.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1046/j.1398-9995.2003.00412.x
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 2
    Digitale Medien
    Digitale Medien
    A new testing method to obtain mode II fatigue crack growth characteristics of hard materials (2004)
    PO Box 1354, 9600 Garsington Road, Oxford OX4 2XG, UK. : Blackwell Science Ltd
    Fatigue & fracture of engineering materials & structures 27 (2004), S. 0 
    Details
    ISSN: 1460-2695
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Maschinenbau
    Notizen: Flaking type failure in rolling-contact processes is usually attributed to fatigue-induced subsurface shearing stress caused by the contact loading. Assuming such crack growth is due to mode II loading and that mode I growth is suppressed due to the compressive stress field arising from the contact stress, we developed a new testing apparatus for mode II fatigue crack growth. Although the apparatus is, as a former apparatus was, based on the principle that the static KI mode and the compressive stress parallel to the pre-crack are superimposed on the mode II loading system, we employ direct loading in the new apparatus. Instead of the simple four-point-shear-loading system used in the former apparatus, a new device for the application of a compressive stress parallel to the pre-crack has been developed. Due to these alterations, mode II cyclic loading tests for hard steels have become possible for arbitrary stress ratios, including fully reversed loading (R=−1); which is the case of rolling-contact fatigue. The test results obtained using the newly developed apparatus on specimens made from bearing steel SUJ2 and also a 0.75% carbon steel, are shown.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1111/j.1460-2695.2004.00747.x
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 3
    Digitale Medien
    Digitale Medien
    A study of deformation-produced deep levels inn-GaAs using deep level transient capacitance spectroscopy (1980)
    Springer
    Applied physics 21 (1980), S. 257-261 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 61.70 ; 71.55
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Deformation-produced deep levels, both of electron and hole traps, have been studied using deep level transient capacitance spectroscopy (DLTS) for an undopedn-type GaAs (HB grown) compressed at 440°C. Concentrations of two grown-in electron trap levels (E c −0.65eV andE c −0.74eV) and one grown-in hole trap level (E v +∼0.4eV) increase with plastic deformation, while that of a grown-in electron trap level (E c −∼0.3eV) decreases in an early stage of deformation. While no new peak appeared in the electron trap DLTS spectrum after plastic deformation, in the hole trap DLTS spectrum a broad spectrum, seemingly composed of many peaks, newly appeared in a middle temperature range, which may be attributed to electronic energy levels of dislocations with various characters.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00886176
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
Schließen ⊗
Diese Webseite nutzt Cookies und das Analyse-Tool Matomo. Weitere Informationen finden Sie hier...