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  • Electronic Resource  (7)
  • 1985-1989  (6)
  • 1980-1984  (1)
  • 1988  (6)
  • 1981  (1)
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  • Electronic Resource  (7)
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  • 1985-1989  (6)
  • 1980-1984  (1)
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  • 1
    Electronic Resource
    Electronic Resource
    Structural phase transformation in the superconducting YLaxBa2−xCu3O7 compounds (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1901-1903 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An orthorhombic-to-tetragonal phase transformation in YLaxBa2−xCu3O7 has been observed as a function of x, but with the same oxygen concentration, from x-ray powder diffraction data. Compounds with x≤0.37 have Tc in the 93–53 K range and are orthorhombic, while compounds with x≥0.45 have Tc≤42 K and are tetragonal. An analysis of the YLa0.6Ba1.4Cu3O6.99 diffraction pattern suggests that the tetragonal structure is closely related to those of the orthorhombic YBa2Cu3O7 and the tetragonal YBa2Cu3O6 with a partial substitution of La3+ ion on the Ba2+ site and a disorder of oxygen atoms at the midpoints of both a and b unit cell edges.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99738
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Crystallography and microstructure of Tl-Ca-Ba-Cu-O superconducting oxides (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 432-434 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the crystallography and microstructure of six oxides in the Tl-Ca-Ba-Cu-O system with nominal compositions Tl1Ba2Cu1O5, Tl1Ca1Ba2Cu2O7, Tl1Ca2Ba2Cu3O9, Tl2Ba2Cu1O6, Tl2Ca1Ba2Cu2O8, and Tl2Ca2Ba2Cu3O10. The structures consist of one, two, or three Cu perovskite-like units sandwiched between Tl-O monolayers or bilayers. The predominant defects in the crystals with bilayer and trilayer Cu perovskite-like units are stacking faults that produce local intergrowths of related structures. The density of stacking defects in these oxides correlates with changes in the superconducting transition temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100611
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Impurity-induced-disordered phase modulators in AlGaAs/GaAs quantum well and double-heterostructure waveguides (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 728-730 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results for two new channel waveguide phase modulators formed by impurity-induced disordering (IID) with Zn diffusion in AlGaAs/GaAs are presented. One device utilizes side diffusion into ridges of single quantum well material and the other utilizes surface diffusion into double-heterostructure material. Waveguide loss for both TE and TM polarizations, and effective index steps calculated from observed mode profiles are reported. TE/TM mode conversion was observed without bias under certain conditions. Initial results for phase modulation are in agreement with expectations and appear not to be affected by the IID.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99816
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  • 4
    Electronic Resource
    Electronic Resource
    Superconducting Tl-Ca-Ba-Cu-O thin films with zero resistance at temperatures of up to 120 K (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 329-331 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have prepared superconducting Tl-Ca-Ba-Cu-O thin films on a variety of substrates with transition temperatures as high as (approximately-equal-to)120 K, confirmed by sharp onsets of substantial Meissner and shielding signals at the same temperatures. The properties of the films are found to depend sensitively on the post-annealing conditions. Highly textured c-axis-oriented films comprised mostly of Tl2Ca1Ba2Cu2Ox, Tl1Ca2Ba2Cu3Ox, and Tl2Ca2Ba2Cu3Ox were synthesized by varying the annealing procedure with corresponding maximum superconducting transition temperatures of (approximately-equal-to)100, 110, and 120 K, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100599
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  • 5
    Electronic Resource
    Electronic Resource
    Surface-oxidation-induced phase separation in FeMn thin films (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 5667-5669 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Films of Fe50Mn50, 700 A(ring) thick, were deposited on glass substrates by diode rf sputtering. Auger electron spectroscopy, and x-ray fluorescence analysis verified the film composition and x-ray diffraction determined the crystalline phase to be α-Mn(Fe), a complex bcc-like structure and a considerable deviation from that dictated by the equilibrium binary phase diagram. The films were annealed for 1 h at 260 °C and 10−7, 10−5, and 10−2 Torr. Auger depth profile analysis showed that (a) while no further oxidation (than that induced by ambient exposure) occurred during annealing at the lowest pressure, severe film oxidation took place at the highest pressure and (b) preferential surface oxidation of Mn resulted in a layered structure consisting of a surface Mn- and oxygen-rich layer followed by a region (deeper into the film) depleted in Mn and Fe enriched. The crystalline phases present were determined by x-ray diffraction analysis to be MnO (fcc) and α-Fe(Mn) (bcc). Magnetic measurements of the oxidized films revealed that they displayed in-plane isotropic ferromagnetic properties, with 4πMs∼15–18 kG for the most extensively oxidized films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342268
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  • 6
    Electronic Resource
    Electronic Resource
    Characterization of FeMn(N)/FeMn/Permalloy exchange coupled structures (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6118-6120 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray diffraction was used to investigate the effect of nitrogen additions on the crystal structure and preferred orientation of FeMn films reactively sputtered in an Ar-N2 ambient. The fcc γ-FeMn phase was stabilized over a range of nitrogen pressures. The fcc FeMn(N) film was then used as a nucleation substrate for the deposition of an FeMn/Permalloy exchange coupled structure. A maximum exchange bias of 60–70 Oe was obtained when the FeMn(N) film was lattice matched to the γ-FeMn structure (a0=3.63 A(ring)).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342111
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  • 7
    Electronic Resource
    Electronic Resource
    Quantitative X-ray fluorescence analysis of thin films using LAMA-2 (1981)
    New York, NY [u.a.] : Wiley-Blackwell
    X-Ray Spectrometry 10 (1981), S. 28-30 
    Details
    ISSN: 0049-8246
    Keywords: Chemistry ; Analytical Chemistry and Spectroscopy
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: An improved version of the LAMA program for the quantitative analysis of composition and mass thickness of thin film materials by X-ray fluorescence (XRF) has been developed. The divergence and slow convergence problems occasionally experienced with the LAMA-1 program have been eliminated by using the linear approximation method and the algorithm of simultaneous refinement of composition and thickness to greatly increase its capability and performance. A study of over a hundred simulated thin films showed that the LAMA-2 program converged much faster than LAMA-1 and gave better accuracy. The efficiency of the program has been improved to the point where it is feasible to operate on a minicomputer.
    Additional Material: 2 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/xrs.1300100108
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