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  • Electronic Resource  (6)
  • 2005-2009
  • 1985-1989  (6)
  • 1989  (6)
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  • Electronic Resource  (6)
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  • 2005-2009
  • 1985-1989  (6)
Year
  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1768-1770 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of concurrent Zn diffusion on the interdiffusion in a Gax In1−x Asy P1−y -InP heterostructure (x=0.28, y=0.61) was investigated using Auger electron spectroscopy and secondary-ion mass spectrometry. The measured profiles showed that the Zn diffusion (600 °C, 1–4 h) predominantly enhanced the cation (In-Ga) interdiffusion. The result could not be interpreted by the Zn-vacancy complex model. Under conditions of a group V overpressure, our results suggest that cation interstitials may control both the rate of Zn diffusion and the mixing of the group III sublattices in the InP-based alloy system.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2658-2660 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report new experimental results on the saturation of the light-induced defect density in hydrogenated (and fluorinated) amorphous silicon. The films were illuminated near room temperature up to 5000 h with bandpass filtered red light at a carrier generation rate G of 5×1020 cm−3 s−1, or up to 20 h with Kr+ laser light (λ=647.1 nm) at G=3×1022 cm−3 s−1. The bulk defect densities Ns saturate in both cases in the vicinity of 1017 cm−3. The saturation values are almost independent either of G or of temperature in the range from room temperature to about 70 °C. The illumination time to reach saturation is approximately proportional to 1/G2. These results are discussed within the framework of existing models for the light-induced defects.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1048-1052 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of concurrent diffusion of Zn and Si on the interdiffusion on the cation and anion sublattices was studied in InxGa1−xPyAs1−y-GaAs heterostructures (with x and y≈0.05). The heterostructures are grown by liquid phase epitaxy and the diffusion sources are equilibrium ternary tie triangle sources. The extent of interdiffusion on both group III and V atoms is observed by depth profiling In and P, respectively, with secondary ion-mass spectrometry. The Zn diffusion selectively enhances the cation (In-Ga) interdiffusion, whereas Si diffusion enhances both cation and anion interdiffusion to the same extent. A kick-out mechanism is proposed to explain the selective enhancement of the cation interdiffusion induced by Zn, and a single vacancy mechanism is proposed for the interdiffusion due to Si. Based on those observations, we propose that the impurity diffusion mechanism is a major factor in determining the degree of enhancement.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 8 (1989), S. 279-280 
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 8 (1989), S. 285-286 
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Brookfield, Conn. : Wiley-Blackwell
    Polymer Composites 10 (1989), S. 429-438 
    ISSN: 0272-8397
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Poly-p-phenylene terephthalamide (PPTA) and nylons (nylon 6, 66, 11, and 12) molecular and particulate composites were examined with emphasis on rheological, mechanical, and morphological characteristics. These molecular composites were prepared by coagulation in water from isotropic ternary sulfuric acid solutions. Upon heating above the crystal melting temperatures of nylons, the molecular composites undergo phase separation and become two-phase particulate composites. Shear viscosity measurements indicate that the viscosity of nylon 6 and 66 systems has increased for an order of magnitude because of the presence of PPTA, but decreased in the case of nylon 11 and 12 systems. PPTA/nylon 6 and 66 systems exhibit yield behavior, particularly with high PPTA contents. Measurements show an extrudate swell of around 1 in all composition ranges and shear rates. Scanning electron microscopic investigations of low PPTA content particulate composites reveal spherical or long fibrillar morphology of PPTA phase dispersed in nylon matrices. Wide angle X-ray diffraction investigations show no preferred orientation in the extrudates, but biaxial orientation in the case of compressed films. The study on mechanical properties of extrudates of 5 to 10 wt.% PPTA compositions exhibits significant improvement in tensile modulus and tensile strength. The heat-treated extrudates show further increase in tensile modulus and tensile strength, as compared with the unannealed samples, but the elongation at break decreases.
    Additional Material: 17 Ill.
    Type of Medium: Electronic Resource
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