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  • Electronic Resource  (66)
  • 1995-1999  (66)
  • 1997  (36)
  • 1995  (30)
  • 1
    Electronic Resource
    Electronic Resource
    Optical characterization of ZnSe/ZnSxSe1−x superlattices pseudomorphically grown on GaAs(100) substrates by molecular beam epitaxy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2709-2713 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article presents optical characteristics of ZnSe/ZnS0.12Se0.88 strained-layer superlattices (SLs) with ZnS0.06Se0.94 buffers pseudomorphically grown on GaAs(100) substrates by molecular beam epitaxy. The SL samples exhibit strong blue luminescence. The main emission peaks in photoluminescence spectra can be attributed to the free exciton transitions between lowest electron subband and ground heavy-hole subband of ZnSe wells. The temperature dependence of PL was investigated in detail. The experimental results of temperature dependence of peak positions and linewidths (FWHM) were fitted to the theoretical calculations, based on Varshni's formula and broadening model. The activation energies of the samples were derived from the temperature dependence of PL intensities. The effects of strain and quantum confinement in ZnSe/ZnS0.12Se0.88 strained-layer SLs with different well thicknesses of 30, 60, and 120 A(ring) were studied by experiments and theoretical calculations. Theoretical calculations and experimental observations are in reasonable agreement. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358739
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  • 2
    Electronic Resource
    Electronic Resource
    Enhanced flux pinning from CuO inclusions in Bi2Sr2CaCu2Oy crystals (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 533-535 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bi2Sr2CaCu2Oy (Bi2212) crystals with CuO inclusions were grown on the surface of KCl flux. The density of CuO incorporations of 109/cm2 was similar to that for Y2BaCuOy in melt-textured YBa2Cu3Oy. The CuO inclusions are needlelike particles with diameter of less than 1 μm. Magnetization measurements show enhanced flux pinning at high magnetic field, compared to crystals without CuO. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364093
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  • 3
    Electronic Resource
    Electronic Resource
    Phaedrus-T probe techniques : Proceedings of the tenth topical conference on high temperature plasma diagnostics (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 434-436 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Probe techniques employed in ohmic, rf, and H-mode Phaedrus-T tokamak plasmas are discussed. The floating potentials of nonemitting probes are found to be insensitive to plasma potential fluctuations at the rf frequency. Both Langmuir and emissive probes have been swept. The Langmuir probes were swept into electron saturation where a low-frequency oscillation was sometimes observed. Large probes (biased electrodes) have been used to perturb the plasma into an H mode. The biased electrode I-V characteristics differ from those of nonperturbing Langmuir probes and can be used to help identify the H mode. Probe behavior during the H mode is discussed. Two novel reciprocating probe designs have been developed. The faster of the two achieves average speeds of 5 m/s, which to our knowledge makes it the world's fastest. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146371
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  • 4
    Electronic Resource
    Electronic Resource
    Photoconductivity study of crescent-shaped GaAs/GaAlAs quantum wires grown by flow rate modulation epitaxy (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 6229-6233 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present photoconductivity data on GaAs quantum wires grown on a V-grooved substrate by flow rate modulation epitaxy. They show that a moderate excitation power density, ∼1 W/cm2, allows the observation of the absorption structure of a single GaAs quantum wire embedded in a p-i-n diode. Furthermore, by increasing the number of active wires inside a diode, the photoconductivity signal is enhanced and additional details of the absorption structure are evidenced. And, finally, a rough quantitative agreement is obtained between the experimental absorption transitions and a simple calculation of the one-dimensional excitonic states using the envelope function approximation. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364410
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  • 5
    Electronic Resource
    Electronic Resource
    Dynamics of the Gas-Phase Acid-Base Reaction (1995)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 117 (1995), S. 9756-9759 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00143a020
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  • 6
    Electronic Resource
    Electronic Resource
    Roughness improvement and hardness enhancement in nanoscale Al/AlN multilayered thin films (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1951-1953 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Al/AlN multilayered thin films with periodic thickness λ less than 24 nm were developed by ion beam assisted deposition. A considerably small surface roughness comparable to that of the silicon substrate and much smaller than those of both monolithic Al and AlN films was obtained. Over the investigated range of λ, all the multilayers are harder than the homogeneous AlN film, and a significant hardness enhancement by a factor of ∼2 over that of the AlN film was observed in the multilayer with λ of 6 nm. Moreover, the hardness enhancement is not at the expense of the multilayer toughness, with the multilayer Al/AlN films showing improved plasticity as compared with the AlN film. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119752
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  • 7
    Electronic Resource
    Electronic Resource
    Conformal oxides on Si surfaces (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1495-1497 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The characteristics of the Si–vacuum interface were compared with the characteristics of the oxide–air interface formed following room temperature oxidation for a variety of samples. Scanning tunneling microscopy was used to measure the surface structure following vacuum preparation, and atomic force microscopy was used to measure the oxide surface on the same samples following exposure to air. Samples investigated included nominally flat Si(111) with equilibrated and quenched surface configurations, Si(111) miscut by 1.25° toward the [2¯11] and equilibrated to yield the faceted structure, and nominally flat Si(001) wafers. In all cases, the step morphology of the clean surfaces was duplicated on the surface of the oxide. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119947
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  • 8
    Electronic Resource
    Electronic Resource
    Textured diamond films growth on (100) silicon via electron-assisted hot filament chemical vapor deposition (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1965-1967 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Textured (100) diamond films are successfully grown on single-crystalline (100) silicon substrate by electron assisted hot filament chemical vapor deposition from a gas mixture of methane and hydrogen. The effects of various parameters have been studied. The optimal growth conditions are obtained and the oriental growth character is discussed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118793
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  • 9
    Electronic Resource
    Electronic Resource
    Photoluminescent properties of Er-doped GaP deposited on Si (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 518-520 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Er-doped GaP layers were deposited on Si (111) substrates using atmospheric pressure metalorganic vapor phase epitaxy. A strong characteristic Er3+ intra-4f-shell emission at 0.80 eV (1.54 μm) is observed over the temperature range of 12–300 K. The integrated intensity of the 0.80 eV emission is only weakly temperature dependent, decreasing less than 50% as temperature increases from 12 to 300 K. These results indicate that Er-doped GaP thin films deposited on Si are suitable as a material for integrated optoelectronic applications. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115174
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  • 10
    Electronic Resource
    Electronic Resource
    Stable glow discharge for synthesis of carbon nanotubes (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 427-429 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use of a stable glow discharge for the synthesis of carbon nanotubes is reported. Bundles of buckytubes are synthesized with remarkably large diameters (up to 200 μm). The bundles are evenly spaced, parallel, and occupy the entire central region of the deposited rod. High resolution electron microscopy (HREM) images of the deposited rod produced by the glow discharge revealed higher yield and improved quality buckytubes as compared to those produced by an arc discharge. The behavior of the two deposition modes (glow and arc) has been compared and their effects on the formation of buckytubes are discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114045
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