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  • Electronic Resource  (42)
  • 2000-2004  (16)
  • 1990-1994  (26)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3808-3815 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The possibility of replacing Pt in the Ti/Pt/Au base and traditionally used metallurgical structure by Ni, while bonding InP laser chip to a submount with AuSn (80% Au) solder, has been investigated. Various Ni-based metal alloys have been prepared by evaporation. Reflow experiments were conducted in a chamber under forming gas-controlled ambient. The Ti/Ni/AuSn system provided much longer surface local freezing duration compared to the Ti/Pt/AuSn system. Scanning electron microscopy analysis revealed a smoother surface morphology for the Ti/Ni/AuSn system after the metal refroze. Auger electron spectroscopy depth profiles indicated the formation of a Ni-Sn-Au interacted layer. The interaction took place in two steps: the first stage was the dissolution of Ni into the Au-Sn liquid followed by precipitation of a Ni-Sn-Au intermetallic compound; the second stage was a solid-state interdiffusion of Sn, Au, and Ni which occured in the interacted layer and in the original Ni layer. The latter step was a diffusion-controlled process, resulting in a very slow growth rate. Both Au and Sn reacted to form Ni alloy layers of almost equal thickness, regardless of the reaction duration (up to about 5 min). This intensive reaction, however, did not lead to full consumption of the Ti interfacial layer, which provided an excellent adhesion layer between the submount and the metallurgical structure.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6224-6228 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The objective of this research is to establish a shape-memory effect in sputter-deposited films of nickel titanium. The alloy, generically called nitinol, was prepared from sputtering targets in two different compositions. Films were deposited up to 10 μm in thickness on glass substrates using a dc magnetron sputtering source. The as-deposited films were amorphous in structure and did not exhibit a shape memory. The amorphous films were crystallized with a suitable annealing process, and the transformation properties were measured using differential scanning calorimetry. The crystallized films showed transition temperatures that were much lower than those of the parent material. X-ray diffraction patterns indicated that the films were not a single phase but showed evidence of a second phase. However, the annealed films demonstrated a strong shape-memory effect. Stress/strain measurements and physical manipulation were used to evaluate the shape recovery. These tests demonstrated sustained tensile stresses of up to 480 MPa in the high-temperature phase, and a characteristic plastic deformation in the low-temperature phase.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6198-6200 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The correlation is reported between perpendicular anisotropy and in-plane lattice strain in Co/Pt multilayers. (Cox/Pty)n samples, where x, y are the thickness of the individual Co and Pt layers and n is the number of repeats that were prepared by molecular beam epitaxy and studied by means of polar magneto-optic Kerr effect and transmission electron microscopy. Kerr rotation data and electron diffraction experiments show that the largest perpendicular anisotropy and square hysteresis loop occur when x=3 A(ring) while the Pt layers are subjected to about −2% in-plane strain. As Co thickness increases, Co and Pt layers gradually lose coherency and the magnetic anisotropy goes from perpendicular to planar. This is accompanied by a relaxation of lattice strain in both Co and Pt layers. The close relationship between magnetic anisotropy and lattice strain can be explained as magnetoelastic anisotropy or stress anisotropy effect due to lattice mismatch between the adjacent epitaxial layers.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper we report the molecular-beam epitaxial growth of Co/Pt superlattices on epitaxial Ag films on GaAs substrates. The growth axis of the superlattice was selected by seeded epitaxy to be along either the [001], [110], or [111] axis of Pt. The magnetic properties of the superlattices depend on the orientation of the growth axis. In situ x-ray photoelectron diffraction studies of the Co-Pt interfaces during their formation reveals that they are not atomically abrupt for any of the orientations. We conclude that models for magnetic anisotropy of Co/Pt superlattices should be based on a combination of magnetocrystalline anisotropy and strain in compositionally mixed interfaces.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 5412-5414 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the magnetic anisotropy in a series of Co-Au and Co-Cu superlattices prepared by molecular-beam epitaxy. Significant epitaxial strains give rise to a magnetoelastic contribution and a large crossover thickness (∼19 A(ring)) for perpendicular easy magnetization. The results are discussed in the context of a careful analysis of the interfacial strains and coherence determined by in situ time-resolved reflection high-energy electron diffraction techniques and x-ray scattering.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on studies of the profiles of the strain field components in epitaxially grown (110)-oriented Co/Pt superlattices with fixed Pt layer thickness (nominally 18 A(ring)) and varying Co layer thickness. The strain profiles in the growth direction as well as fluctuations in lattice parameters at the interfaces are obtained using a parameter refinement method for the quantitative analysis of high angle aitch-theta–2aitch-theta x-ray diffraction scans. We find that all strain components originate only from the Co-Pt interfaces. Off-axial x-ray scattering measurements provide for the in-plane strain components, which are found to increase with increasing Co layer thickness. From the obtained strain fields the in-plane uniaxial magnetic anisotropy contributions caused by magnetoelastic interactions are calculated, which agree well with experimentally observed values.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial Co/Cr multilayers, and single-crystal Co thin films etc. have been grown on MgO and Al2O3 substrates with Cr and Mo as buffer layers by molecular beam epitaxy technique. From the structure and magnetoresistance studies, we have found that the ferromagnetic anisotropy of resistance (AMR) is strongly influenced by the buffer layer, but with negligible effect due to the variation of the structure of Co films. The AMR of Co film on Cr buffer layer is quite small (0.1%); however, the MR of Co/Cr multilayers is almost one order larger than the AMR of Co film on Cr buffer layer. An enhancement factor of 4 for the MR in Co/Cr multilayers by the interface roughness has been observed. This suggests that the effect due to the spin dependent scattering at the interfacial regions of the superlattice is larger than that due to the spin dependent scattering in the ferromagnetic layers for the MR in the Co/Cr multilayer system.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 971-973 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin active region single stripe aluminum gallium arsenide traveling-wave amplifiers have been used to generate and amplify 15 ps optical pulses to nearly 50 mW average powers and to peak powers in excess of 3 W. No appreciable temporal pulse distortion is observed after amplification. These peak power levels should prove to be sufficient to induce nonlinear optical effects in fibers.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 206-211 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Application of near-field optical second harmonic microscopy to nanometer scale crystal and strain analysis of thin polycrystalline ferroelectric films is described. The near-field signal is shown to be sensitive to local crystal orientation by experimental and theoretical studies of polarization properties of second harmonic generation from a poled single crystal of BaTiO3. Spatial resolution of the order of 80 nm has been demonstrated by recovery of the local poling direction of individual ferroelectric domains in polycrystalline thin Pb(ZrxTi1−x)O3 films. Near-field strain induced second harmonic generation from thin BaxSr1−xTiO3 films has also been studied, and an agreement between theory and experiment has been established. Thus, the technique described provides a tool for nanometer scale crystal and strain analysis of polycrystalline samples. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 664-666 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report fast (nanosecond) transient photovoltaic response and steady-state photovoltage of rectifying Al/C60/Au sandwich devices. The transient photovoltage changes polarity at a critical light intensity, which can be varied and controlled by applying steady-state light as bias. This ability to change the polarity of the transient photovoltaic response and to control the intensity at which the polarity changes sign offers potential for use in applications in the area of fast nonlinear optoelectronic detectors.
    Type of Medium: Electronic Resource
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