Library

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • Electronic Resource  (188)
  • 2000-2004  (82)
  • 1985-1989  (104)
  • 1960-1964  (2)
  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 749-751 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown and characterized heteroepitaxial films of InP on GaAs. We demonstrate that by using flow-rate modulation epitaxy to grow the interface layer in a two-step process, we can improve the quality of heteroepitaxy films. The full widths at half maximum of the x-ray rocking curve and the 10 K photoluminescence spectrum for a 6.2-μm-thick InP/GaAs are 144 arcsec and 1.28 meV, respectively.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 2
    ISSN: 1365-3059
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Seeds of selected European and Japanese winter wheat cultivars were grown at two experimental sites in China, namely Yaan, Sichuan province (YA), and Yangzhou, Jiangsu province (YZ), where wheat yellow mosaic bymovirus (WYMV) was severe. There were some differential responses of the cultivars to the virus isolates present at the two sites. The complete nucleotide sequence of both RNAs of both virus isolates was determined. Their genome organization was identical to that reported for a Japanese isolate and the sizes were very similar. Nucleotide comparisons demonstrated that parts of the CI and NIa coding regions on RNA1 and the N-terminal part of the P2 coding region on RNA2 were particularly variable, while substantially conserved regions occurred in the 3′ UTR of RNA2, the 7K, one part of the CI and parts of the NIb and coat protein. It seems unlikely that differences in the 7K and NIa-VPg proteins are responsible for virulence differences and the CI and NIb regions were considered the most promising for further study.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 3
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 89 (1988), S. 2406-2411 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: (High resolution) electron energy loss spectroscopy [(HR)EELS] has been used successfully to provide direct spectroscopic evidence regarding details of the molecular fragmentation of methoxy (CH3O) on Al(111) caused by energetic electron and ion beams. Chemisorbed methoxy on Al(111) is produced by heating of adsorbed CH3OH. Irradiation of CH3O(a) by either energetic (∼300 eV) electrons or Ar+ ions results in C–O and C–H bond scission with simultaneous formation of Al–O and Al–C bonds. During electron stimulated desorption the CH3O(a) species undergo sequential fragmentation first to CHx groups that are captured by the surface and in the final decay process to adsorbed carbon. C–O bonds in CH3O(a) are depleted preferentially compared to C–H bonds in CHx(a) species. The electron induced sequential fragmentation of the parent CH3 group (from methoxy) to resultant CHx(a) occurs with an efficiency ∼3 orders of magnitude greater then the subsequent process of CHx(a) →C(a). Cross sections for various bond scission processes in electron and ion bombardment have been estimated.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3114-3119 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fe/Tb (1.2 nm) multilayer films with various Fe layer thicknesses were prepared by vapor deposition. Magnetic and microstructure of the films were characterized by various experimental methods. The results show that the films evolve from ferromagnetic to superparamagnetic, and Fe in the multilayers transforms from bcc crystalline to amorphous state. The transition of magnetic property and structure is found to be related to the rough interface associated with the amorphous phase formation in Fe/Tb interface. In the [Tb(1.2 nm)/Fe(0.5 nm)]30 multilayer, Fe layers are separated into discontinuous superparamagnetic clusters by three-dimensional Tb crystal aggregates, which are responsible for paramagnetic-like spins at the interface that strengthen the spin-dependent scattering. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8074-8079 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electric properties of In0.12Ga0.88As/GaAs p-i-n multiple-quantum-well (MQW) diodes, with the MQW layer grown at different temperatures by molecular beam epitaxy, have been investigated. Temperature-dependent current–voltage studies reveal a trap-filled limit current at a low temperature and a generation-recombination current via deep levels at high temperature for a 300 °C-grown sample. Frequency-dependent capacitance and deep-level transient spectroscopy reveal one majority trap at 0.73 eV and two minority traps at 0.71 and 0.43 eV. The 0.73 eV trap is also detected in 550 °C-grown samples, suggesting that it is a common defect in relaxed InGaAs/GaAs MQWs and probably originates from the defect states related to the strain relaxation. The 0.71 eV trap is believed to be the dominating deep level that governs the current conduction due to the activation energy observed in the current–voltage characteristics. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 192-197 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural properties of as-grown and rapid thermal oxidized Si1−x−yGexCy epitaxial layers have been examined using a combination of infrared, x-ray photoelectron, x-ray diffraction, secondary ion mass spectroscopy, and Raman spectroscopy techniques. Carbon incorporation into the Si1−x−yGexCy system can lead to compressive or tensile strain in the film. The structural properties of the oxidized Si1−x−yGexCy film depend on the type of strain (i.e., carbon concentration) of the as-prepared film. For compressive or fully compensated films, the oxidation process drastically reduces the carbon content so that the oxidized films closely resemble to Si1−xGex films. For tensile films, two broad regions, one with carbon content higher and the other lower than that required for full strain compensation, coexist in the oxidized films. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Chaos 12 (2002), S. 100-106 
    ISSN: 1089-7682
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We generalize the n:m phase synchronization between two chaotic oscillators by mutual coupling phase signals. To characterize this phenomenon, we use two coupled oscillators to demonstrate their phase synchronization with amplitudes practically noncorrelated. We take the 1:1 phase synchronization as an example to show the properties of mean frequencies, mean phase difference, and Lyapunov exponents at various values of coupling strength. The phase difference increases with 2π phase slips below the transition. The scaling rules of the slip near and away from the transition are studied. Furthermore, we demonstrate the transition to a variety of n:m phase synchronizations and analyze the corresponding coupling dynamics. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1251-1254 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The onset of strain relaxation in In0.2Ga0.8As/GaAs quantum-well structures is investigated. X-ray diffraction shows that when the InGaAs thickness increases beyond its critical thickness, another peak on the right shoulder of the GaAs peak appears, indicating that the top GaAs layer is being compressed in the growth direction by the relaxation of the InGaAs layer. Energy shifts of 44 and 49 meV are observed, respectively, from the strains of the InGaAs and GaAs top layers when increasing the InGaAs thickness from 300 and 1000 Å. These energy shifts are in agreement with theory calculated based on the relaxation process observed in x-ray diffraction, providing evidence that the relaxation occurs from near the bottom InGaAs/GaAs interface while the top interface still remains strained. This result is further corroborated by the images of cross-sectional transmission electron micrographs which show that most of the misfit dislocations are confined near the bottom interface. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7814-7819 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Iron containing diamond-like amorphous carbon (a-C:Fe) films were deposited by filtered cathodic vacuum arc technique. The influences of Fe content and substrate bias on the surface energy of the films were investigated. The surface energy of a-C:Fe films was determined by the contact angle measurement. Atomic force microscopy, Raman spectroscopy, and x-ray induced photoelectron spectroscopy were employed to analyze the origin of the variation of surface energy with various Fe content and substrate bias. It is found that the contact angle for water increases significantly after incorporating Fe into the films and the films become hydrophobic. The roughness of these films has no effect on the contact angle. The surface energy is reduced from 42.8 to 25 dyne/cm after incorporating Fe into the a-C film (10% Fe in the target), which is due to the reduction of both dispersive and polar component. The reduction in dispersive component is ascribed to the decrease of atomic density of the a-C:Fe films due to the increase in sp2 bonded carbon. When sp2 content increases to some extent, the atomic density remains constant and hence dispersive component does not change. The absorption of oxygen on the surface plays an important role in the reduction of the polar component for the a-C:Fe films. It is proposed that such network as (Cn–O–Fe)–O–(Fe–O–Cn) may be formed and responsible for the reduction of polar component. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...