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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2036-2038 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial [Co/Cu]10 grown on Si (001) has been irradiated by 1 MeV C+ with a dose of 1×1016/cm2. The intrinsic characteristics of epitaxy, such as crystal structure and fourfold magnetic anisotropy, are conserved after ion irradiation. However, the extrinsic magnetic properties are changed such that the coercivity decreases and the squareness of the hysteresis loop is noticeably improved. The intensity of the Cu (200) peak in the x-ray diffraction pattern increases about three times and its half-width decreases after irradiation. It is concluded that the changes of magnetic properties induced by ion irradiation result from the grain growth and the improved crystalline quality. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diffusion barrier characteristics and electrical properties of self-aligned MgO layers obtained from a Cu(Mg) alloy film have been investigated. Self-aligned surface and interfacial MgO layers were formed upon annealing a Cu(Mg) film in an oxygen ambient and prevented interdiffusion of Cu in SiO2 up to 700 °C. The thermal stability of a pure Cu/TiN/Si multilayer system has been significantly enhanced up to 800 °C by the MgO layers by forming a MgO/Cu/MgO/TiN/Si multilayer system. A combined structure of Si3N4(500 Å)/MgO(100 Å) increased the breakdown voltage up to 20 V from 15 V and reduced the leakage current density down to 3×10−9 A/cm2 from 1×10−8 A/cm2 compared to a pure copper system. Consequently, the deposition of Cu(Mg) alloy followed by annealing in an oxygen ambient gives rise to the formation of a self-aligned MgO layer with excellent diffusion barrier and electrical characteristics and the film can be applied as a gate electrode in thin-film transistor/liquid-crystal displays, resulting in a reduction of process steps. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 83 (1979), S. 10-17 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1104-1107 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the effect of strain-induced indium clustering on the emission properties of InGaN/GaN multiple quantum wells grown with high indium composition by metalorganic chemical vapor deposition. Indium clustering confirmed by high-resolution transmission electron microscopy results in the redshift of the emission peak and the increase of the integrated photoluminescence (PL) intensity. We found that strong carrier localization in indium clustering induces the increases of the activation energy of PL integrated intensity, the temperature independence of PL decay profiles, and the intensity fluctuation of the cathodoluminescence images. All these observations suggest structurally and optically that the improved emission properties in the InGaN/GaN multiple quantum well with high indium composition are associated with the localized states in the strain-induced indium cluster. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1166-1170 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Influence of strain relaxation on structural and optical properties of the InGaN/GaN multiple quantum wells (MQWs) with high indium composition grown by metalorganic chemical vapor deposition was investigated. From photoluminescence and transmission electron microscopy (TEM), we found that within the MQWs, the formation of misfit dislocation affects the degradation of optical properties more than the formation of stacking faults. For the MQWs with indium composition above the critical indium composition on the formation of misfit dislocation, the position of the main emission peak is significantly affected by the increase of quantum well numbers compared to samples with indium composition below the critical indium composition. The origins of redshift by the increase of quantum well numbers is believed to be caused by the increase of indium segregation in the MQWs using high-resolution TEM and energy dispersive x-ray spectroscopy. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 217-220 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission electron microscopy (TEM) and Rutherford backscattering spectroscopy (RBS) were used to characterize low resistance (100–1000 Ω μm2) tunneling junctions consisting of Ta/NiFe/Cu/NiFe/IrMn/CoFe/Al (6.6 and 7.7 Å)–oxide/CoFe/NiFe/Ta multilayers after annealing at temperatures ranging from 250 to 500 °C. The Al (7.7 Å) junction showed continual improvement in the magnetoresistance (MR) ratio when annealed up to 300 °C while the MR ratio of the Al (6.6 Å) junction dropped sharply above 250 °C in spite of the only 1 Å difference in the deposited thickness of aluminum metal prior to plasma oxidation. TEM measurement provided evidence that the annealing process improves, in general, structural uniformity in the insulation layer, but thermal treatment can also degrade junction performance at a relatively low temperature due to current leakage through the electrodes. Current leakage can be problematic for a junction whose insulation barrier may be too thin (less than ∼10 Å). Both RBS and TEM analyses indicated that the maximum annealing temperature of exchange biased junctions lies between 400 and 500 °C above which the multilayer structure in the pinned electrode is destroyed by interdiffusion. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4027-4031 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission electron microscopy (TEM) and selected area electron diffraction pattern (SADP) measurements were carried out to investigate the ordered structures near ZnTe/GaAs heterointerfaces, and Auger electron spectroscopy (AES) and secondary ion mass spectroscopy (SIMS) measurements were performed to determine the compositions of the ZnTe/GaAs interfacial layer. The SADP showed two sets of {〈fraction SHAPE="CASE"〉12 〈fraction SHAPE="CASE"〉12 〈fraction SHAPE="CASE"〉12} extra spots with symmetrical intensity, and the corresponding high-resolution TEM image showed doublet periodicity in contrast of the {111} lattice planes. The results of the SADP and the high-resolution TEM measurements showed that a CuPt-type ordered (Cd, Zn)Te structure was observed near the ZnTe/GaAs heterointerface, and the AES and SIMS results showed that the ordered structure was formed due to the diffusion of Cd atoms into the ZnTe layer. Two variants, one for each direction of the doublet periodicity on the {111} lattice, were observed in the ordering, and each variant had its own domain structure with a similar probability. The formation of the CuPt-type ordered structure near the ZnTe/GaAs heterointerface originated from both the existence of the Cd residual impurities during the initial growth stage of the ZnTe epilayer and the strain relaxation of the ZnTe epilayer. These results can help to improve the understanding of the microstructural properties of the ZnTe/GaAs heterointerface. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 6297-6301 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of Permalloy films, of various shapes such as a square, a rectangle, a circle, and a rhombus, was made. The sample length to width ratio L/w varied from 1 (i.e., square) to 29 (i.e., rectangle). We studied how the planar Hall effect (PHE) signal was affected by adding a transverse field Hy along the easy-axis direction of the sample. It was found that in a certain range of Hy, the PHE sensitivity S might become inoperative, i.e., S changed linearly as a function of Hy from −Smax to +Smax (or vice versa), where Smax was the maximum sensitivity. This phenomenon is explained by considering the Zeeman-energy and the single-domain-rotation effects. In particular, for the square sample, the following data exist: (1) Smax is as high as 310 Ω/T at the film thickness t=500 Å, and (2) the inoperative range for Hy is the narrowest among all the samples. From this study, we conclude that the field of the Earth He—as long as its horizontal component is larger than 0.25 Oe—can be employed to stabilize the magnetic structure of a Permalloy element and to achieve the best PHE performance with Smax. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2163-2165 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oil and gas pipelines often display a bulk magnetic easy magnetization direction, and this may influence results obtained during magnetic nondestructive evaluation. The origin of this magnetic easy axis is not well known. Earlier work [L. Clapham, C. Heald, T. Krause, and D. L. Atherton, J. Appl. Phys. 86, 1574 (1999)] speculated that it was a result of residual stresses introduced during pipeline manufacturing, specifically cold bending. This article reports a study in which a magnetic Barkhausen noise technique is used to follow the development of a magnetic easy axis in a steel plate sample subjected to progressive amounts of cold bending. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6496-6500 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It has been found that effective removal of small particles from silicon wafer surfaces can be achieved by laser-induced airborne plasma shock waves initiated above the surface. This process has demonstrated successfully the removal of 1 μm sized tungsten particles from the surface. Tungsten is known to be one of the most difficult particles to remove using conventional laser cleaning techniques employing direct laser irradiation onto the surface. The area cleaned by the shock waves was over ten times larger than that achieved by conventional laser cleaning. This provides an advantage in speed for cleaning large areas. The cleaning efficiency was strongly dependent on the gap distance between the laser focus (where laser-induced sparking takes place) and the surface. The particle removal began to occur with a gap of 6 mm and the removal efficiency increased significantly with decreasing the gap resulting in a complete removal at 2 mm. The basic idea behind this new cleaning technique and how to apply it for the removal of small particles from surfaces are described. Theoretical considerations about adhesion forces of small particles on the surface and laser-induced shock wave generation are carried out to understand this process. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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