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  • Electronic Resource  (164)
  • 1995-1999  (104)
  • 1990-1994  (59)
  • 1830-1839  (1)
  • 11
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract : Familial Alzheimer's disease (FAD) mutant forms of presenilin 1 (PS1) and 2 have been shown to sensitize cells to apoptotic cell death. Here we explore the effects of FAD mutant forms of PS1 on caspase activation during apoptosis. We show that caspase activation leads to increased generation of alternative C-terminal fragments (CTFs) from mutant as compared to wild-type (wt) PS1. For this purpose, very low expression levels of wt, A246E, L286V, and ΔE10 FAD mutant PS1 proteins in stably transfected human H4 neuroglioma cells were used to avoid artifactual induction of spontaneous apoptosis due to overexpression of PS1. Staurosporine treatment of these cells resulted in increased cell death and up to a 10-fold increase in caspase-3 activation in mutant versus wt PS1-expressing cell lines. Correspondingly, relative levels of caspase-cleaved PS1 CTFs were increased by five-to sixfold in the FAD mutant versus wt PS1 cells. Elevated caspase activation and caspase cleavage of FAD mutant PS1 suggest the possibility of either a direct proapoptotic effect of mutant PS1 or interference of mutant PS1 with antiapoptotic effects of wt PS1.
    Type of Medium: Electronic Resource
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  • 12
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of magnetoannealing on the giant magnetoresistance (GMR) in FexAg100−x granular films (X=15, 26, 29, 33, 37, and 60) were investigated. The thin films were annealed in a presence of magnetic field of 3 kOe at different temperatures of 300, 400, and 500 °C using various annealing times. It is found that the anisotropic GMR characteristics were developed when Fe-Ag granular thin films were annealed in the presence of a magnetic field. The anisotropic GMR characteristics of the thin films were closely related to the magnetic anisotropy developed along the field direction during magnetoannealing.
    Type of Medium: Electronic Resource
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  • 13
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6900-6902 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The causes of the coercivity enhancement and the coercivity instability of acicular cobalt ferrite particles containing 0–9.2 wt % Fe2+ ions under the influence of magnetic field and temperature were investigated by means of transverse magnetic field annealing, torque, and Mössbauer experiments. The coercivity enhancement and the instability of Co modified iron oxide particles are closely related to the uniaxial magnetic anisotropy. A Fe2+-CO2+ pair model was proposed to explain the uniaxial magnetic anisotropy of Co modified iron particles. To verify the nature of the Fe2+-Co2+ pair, the probability of one or more Co ions appearing in the neighborhood of a B site Fe2+ ion was calculated using the chemical composition, the Mössbauer parameters, Pi(Fe+2) and Pi(Fe+3) and discussed conditions for forming the pair between the nearest-neighbor Co2+ and Fe2+ ion.
    Type of Medium: Electronic Resource
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  • 14
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4893-4895 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To improve the saturation magnetization (Ms) of cobalt ferrite thin films, metal/cobalt ferrite composite thin films were prepared by controlling the sputtering conditions such as oxygen concentration in sputtering gas, substrate temperature, composition of the thin films. With decreasing the oxygen ratio from 50% to 5% in sputtering gas and increasing the substrate temperature from room temperature to 400 °C, the Ms of the thin films was increased and the coercivity (Hc) decreased. The result was attributed to deposition of the metal/cobalt ferrite thin films. With increasing the metal ratio in the thin films, preferred orientation of (111) of cobalt ferrite was worsened in the thin films. The metal deposited in the thin films was identified as cobalt with (002) preferred orientation. In higher cobalt content than the stoichiometric composition of CoFe2O4, the thin films with high Ms and Hc could be deposited in the wide substrate temperature range of 200–400 °C. We can prepare the metal/cobalt ferrite composite thin films with Ms about 580 emu/cm3 and Hc 1700 Oe by controlled the sputtering conditions. The thin films are thought to be applicable to the magnetic recording media with high recording density. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 15
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6193-6196 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated light-emitting nanocrystallites embedded in an a-Si:H matrix using a conventional plasma-enhanced chemical-vapor-deposition system. It was found that the photoluminescence properties are directly related to the deposition parameters. The quantum size effect model is proposed to explain the photoluminescence. Two structural prerequisites are proposed for this kind of films to exhibit effective light emission: One is an upper limit for mean crystallite size of about 3.4 nm, the other is an upper limit for crystallinity of about 30%. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 16
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 409-412 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of P doping on the coercivity and magnetic-thermal stability of Co-substituted iron oxides have been investigated by means of magnetic measurements, torque curves, and Mössbauer spectra. It is found that the P doping of cobalt-substituted acicular oxides promotes the coercivity and the stability with temperature of the coercivity. Then effects may be attributed to the increase of the cubic magnetocrystalline anisotropy constant K1 and the activation energy E, respectively. The Mössbauer results suggest that P ions are located in the neighborhood of the B-site Fe ions. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 17
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 4115-4115 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To match the requirements for development of transformer cores with lower iron losses, many new materials are under development including amorphous materials, 6.5% Si–Fe sheets and thin gauged 3% Si–Fe sheets. Among these materials, the thin gauged 3% Si–Fe sheets are attracting attention due to their good magnetic properties and scientific interest. Arai et al. reported that the magnetic properties of the sheets were comparable to those of the amorphous materials and (110)[001] preferred orientation of the sheets are developed by tertiary recrystallization.1 The 100 μm thick 3% Si–Fe sheets were prepared via conventional metallurgical processes including melting and casting, hot rolling to 25 mmT at 1200 °C, first cold rolling to 0.5 mmT, intermediate annealing at 800 °C for 30 min, second cold rolling to 0.25 mmT, intermediate annealing at 800 °C for 30 min, final cold rolling to 100 μm and final annealing at 1200 °C for 1 h in a vacuum of 5×10−6 Torr. Among these processes, the cold rolling process is an important one because preferred orientation of the sheets was developed in the process. Nakano et al. reported that there was an optimum cold rolling ratio to get required magnetic properties of the sheets.2 Recently, we found that the reduction rate, i.e., number of passes, as well as reduction ratio affected the preferred orientation and magnetic properties of the sheets. The number of passes in the first cold rolling process was changed from 7 to 60 and B10 values of the final sheets were changed from 1.30 to 1.84 T according to the number of passes. From x-ray experiments, it was found that intensity of (110) peak in the cold rolled and annealed sheets strongly affected the magnetic properties of the final sheets. We will discuss the relationship between the reduction rate and preferred orientation, and magnetic properties of the thin gauged 3% Si–Fe sheets. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 18
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A tertiary crystal growth method was used to fabricate thin gauged 3% Si–Fe sheets in order to reduce the thickness of the sheets without deteriorating soft magnetic properties. During the investigation, the magnetic properties of final annealed sheets were found to be directly related to the magnetic properties of final cold rolled sheets. X-ray and transmission electron microscopy were used to understand the above relation. It was found that the fraction of (110) grains at the surface of the final cold rolled sheets significantly affected the final magnetic properties of the final annealed sheets. On the basis of the above argument, the final magnetic properties of the thin gauged Si–Fe sheets can be predicted by the B10 values of the final cold rolled sheets. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 19
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 4994-4999 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nitrogen ions were implanted into ZnSxSe1−x epilayers grown on p-GaAs (100) substrates by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD). Dopant activation and annealing out the implant damage were achieved by a postannealing process in a N2 ambient. Schottky structures employing the implanted p-type ZnSxSe1−x were fabricated and device efficacy was examined by photoluminescence (PL) spectroscopy, current–voltage (I–V), current–voltage temperature (I–V–T), and high frequency capacitance–voltage (C–V) measurements. PL spectra showed a clear donor–acceptor pair (DAP) recombination at an energy of 2.735 and 2.72 eV, in both MBE and MOCVD ZnSSe epilayers, respectively, regardless of the postannealing temperatures. The diode conduction in forward bias proceeds by the combination of thermionic and tunneling emission. C–V measurement proved the maximum doping concentration to be around 1017 cm−3 after ion implantation. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 20
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2328-2333 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: p-i-n photodiodes were fabricated on nitrogen ion implanted undoped ZnSe/n-type ZnSe epilayers grown on n+GaAs (100) substrates by molecular beam epitaxy. To obtain a quasi-uniform p layer doping profile, nitrogen ions at multiple energies and ion doses were implanted at room temperature. The activation of implanted species was carried out by an optimized post-annealing in a nitrogen ambient. Optical studies were performed on the implanted/annealed devices by photoluminescence spectroscopy at 10 K, which indicated donor–acceptor pairs at an energy of 2.7 eV and its phonon replicas with 30 meV intervals. The circular p-i-n diodes with a 1 mm diam contact area showed a device breakdown voltage to be linearly dependent on the thickness of the undoped ZnSe epilayer. For p-i-n diodes fabricated on an initial 0.5 μm thick undoped ZnSe layer, an ideality factor of 1.19 and a reverse bias breakdown voltage of 12 V was observed. A large photocurrent, good linearity with light intensity, and low dark current were observed. A photocurrent/dark current ratio 〉105 was obtained at an illumination intensity of 100 mW/cm2. These devices exhibited a responsivity of 0.025 A/W at a wavelength of 460 nm through the top 200 Å thick metal contacts.© 1998 American Institute of Physics.
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