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  • Electronic Resource  (25)
  • 1995-1999  (25)
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  • Electronic Resource  (25)
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  • 1
    Electronic Resource
    Electronic Resource
    Effect of nitrogen on the band structure of GaInNAs alloys (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2349-2351 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that incorporation of nitrogen in Ga1−xInxAs to form Ga1−xInxNyAs1−y alloys leads to a splitting of the conduction band into two nonparabolic subbands. The splitting can be described in terms of an anticrossing interaction between a narrow band of localized nitrogen states and the extended conduction-band states of the semiconductor matrix. The downward shift of the lower subband edge accounts for the N-induced reduction of the fundamental band-gap energy. An analysis of the relationship between the subband splitting and the band-gap reduction demonstrates that the energetic location of the valence band is nearly independent of the N content in Ga1−xInxNyAs1−y alloys. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371148
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  • 2
    Electronic Resource
    Electronic Resource
    Amphoteric behavior and precipitation of Ge dopants in InP (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4907-4915 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have directly correlated the electrical behavior, the impurity lattice site location, ion damage, and the local bonding environments of Ge-dopant ions implanted into InP. We have found that after rapid thermal annealing the free electron concentration in the samples implanted at room temperature (RT) are always higher than those implanted at liquid nitrogen temperature (LNT). Although the macroscopic structure seems to be insensitive to the implantation temperature, significantly more local disorder is created in the LNT implanted amorphous layers. Moreover, the amphoteric bonding structure of the Ge atoms is found to be well established already in the as-implanted amorphous InP. After high temperature annealing ((approximately-greater-than)800 °C), the Ge atoms rearrange locally with more of the Ge substituting the In site than the P site resulting in n-type conductivity. The solid solubility of Ge in the InP is measured to be ∼1.4–1.6×1020/cm3 while the free electron concentration is estimated to saturate at ∼3.4×1019/cm3. The relatively low electron concentration can be explained by Ge precipitation and the compensation of GeIn donors by GeP acceptors in the RT implanted case. The further reduction in electron concentration in the LNT implanted samples is believed to be related to the high residual damage found in these samples. The high solubility of Ge in InP can be attributed to the availability of two possible sublattice sites for the dopant and the compensation of the local strains due to the amphoteric substitution of the Ge. The concentration ratio of the GeIn to GeP determined in the heavily implanted material has been used to estimate the difference in the formation energy of Ge substituting those two different sites.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363533
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  • 3
    Electronic Resource
    Electronic Resource
    Photoreflectance study on the behavior of plasma-induced defects deactivating Si donors in GaAs (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5103-5108 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The behavior of Ar plasma-induced defects deactivating Si donors in GaAs has been studied. We have applied photoreflectance spectroscopic analysis combined with stepwise wet etching to the depth profiling of defects and succeeded in determining the concentrations and profiles of defects in the sub-surface layer for the first time. We found that the point defects responsible for deactivation undergo electronically enhanced diffusion under the circumstance of photoexcited carriers, demonstrating that the ultraviolet light from plasma is a cause of the deep penetration of defects far beyond the stopping range of ions. We also found that the generation of these point defects is enhanced by photoexcited carriers and that diffusing point defects are trapped by the background defects or impurities, forming immobile complexes. We propose a model in which self-interstitials are the most probable point defects responsible for deactivation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359742
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  • 4
    Electronic Resource
    Electronic Resource
    Substitutionality of Ge atoms in ion implanted AlSb (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2406-2408 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The substitution of Ge atoms into ion implanted AlSb is investigated by extended x-ray absorption fine structure spectroscopy. Our results reveal that in the as-implanted material, the implanted Ge atoms are equally distributed between two specific sites, one surrounded by Al atoms and the other surrounded by Sb atoms. After annealing at 750 °C for 5 s, the coordination number of the Ge atoms increases from ∼3 to ∼4 indicating solid phase regrowth of the implantation induced amorphous surface layer. Moreover, in the annealed AlSb, the substitution of Ge atoms into the Al sublattice dominates with an estimated GeAl]:[GeSb]∼0.8:0.2. These results suggest that Ge atoms act preferentially as donor species in AlSb. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113955
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  • 5
    Electronic Resource
    Electronic Resource
    Native point defects in low-temperature-grown GaAs (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 279-281 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present structural and electronic data which indicate that the dominant defects in GaAs grown at low temperatures (LT GaAs) by molecular beam epitaxy (MBE) are As antisites (AsGa) and Ga vacancies (VGa), with negligible amounts of As interstitials (Asi). We show that the change of lattice parameter correlates with the concentration of AsGa, and that AsGa alone can account for the lattice expansion. We also show that the total concentration of AsGa has a characteristic second power dependence on the concentration of AsGa in the positive charge state for the material grown at different temperatures. This can be understood provided that VGa defects are the acceptors responsible for the carrier compensation. Our results are consistent with most experimental results and the theoretical expectation from the calculation of defect formation energies. We find that the conclusion may also be true in As-rich bulk GaAs. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114782
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  • 6
    Electronic Resource
    Electronic Resource
    Fano interference of the Raman phonon in heavily boron-doped diamond films grown by chemical vapor deposition (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 616-618 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of boron-doped polycrystalline diamond films grown by direct current and microwave plasma deposition was studied with Raman and infrared (IR) absorption spectroscopy. A Fano line shape is observed in the Raman spectra for films with a boron concentration in a narrow range near 1021 cm−3. The appearance of the Fano line shape is correlated with the disappearance of discrete electronic transitions of the boron acceptor observed in the IR spectrum and the shift of the broadened peak to lower energy. The Fano interaction is attributed to a quantum mechanical interference between the Raman phonon (0.165 eV) and transitions from the broadened impurity band to continuum states composed of excited acceptor and valence band states. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114031
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  • 7
    Electronic Resource
    Electronic Resource
    Near-band-edge photoluminescence emission in AlxGa1−xN under high pressure (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2274-2276 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present results of pressure-dependent photoluminescence (PL) studies of single-crystal AlxGa1−xN epitaxial films grown on sapphire substrates by metalorganic chemical vapor deposition. PL measurements were performed under hydrostatic pressure using the diamond-anvil-cell technique. PL spectra taken from the AlxGa1−xN epitaxial films are dominated by strong near-band-edge luminescence emissions. The emission lines were found to shift linearly towards higher energy with increasing pressure. By examining the pressure dependence of the spectral features, the pressure coefficients for the PL emissions associated with the direct Γ band gap of AlxGa1−xN were determined. Our results yield a pressure coefficient of 4.0×10−3 eV/kbar for Al0.05Ga0.95N and 3.6×10−3 eV/kbar for Al0.35Ga0.65N. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121277
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  • 8
    Electronic Resource
    Electronic Resource
    Persistent photoconductivity in n-type GaN (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1098-1100 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the spectral and temperature dependence of persistent photoconductivity (PPC) in metal-organic chemical vapor deposition grown unintentionally doped n-type GaN. The PPC effect is detectable up to temperatures of at least 352 K, the highest temperature used in this study. At 77 K, the conduction persists at a level 80% higher than the equilibrium dark conduction for over 104 s after removing the excitation. We have determined the spectral dependence for the optical cross section for PPC and obtain an optical ionization energy of ∼2.7 eV. The temperature dependence of the photoconductivity decay and its nonexponential shape are explained by a distribution of capture barriers with a mean capture barrier of 0.2 eV and a width of ∼26 meV. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119738
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  • 9
    Electronic Resource
    Electronic Resource
    Enhanced diffusion in nonstoichiometric quantum wells and the decay of supersaturated vacancy concentrations (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 239-241 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Enhanced superlattice disordering in nonstoichiometric AlAs/GaAs quantum wells exhibits weak temperature dependence because of the decay of the supersaturated concentration of group-III vacancies. We present a formalism for transient enhanced diffusion in nonstoichiometric materials with which we can extract migration enthalpies Hm by assuming that the vacancy decay is thermally activated with an enthalpy Ha. By analyzing the electroabsorption from the quantum-confined Stark effect for a set of isochronal and isothermal anneals, we extract a migration enthalpy Hm=(1.8±0.2) eV for group-III vacancies, as well as an activation enthalpy Ha=(0.7±0.2) eV for vacancy annihilation. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117936
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  • 10
    Electronic Resource
    Electronic Resource
    Comparison study of photoluminescence from InGaN/GaN multiple quantum wells and InGaN epitaxial layers under large hydrostatic pressure (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1613-1615 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the results of a comparison study of photoluminescence (PL) from an In0.15Ga0.85N/GaN multiple-quantum-well (MQW) sample and an In0.11Ga0.89N thick epitaxial-layer sample, which have very similar band-gap energies. Large hydrostatic pressures were used for our investigations. The PL emissions in both samples were found to shift linearly to higher energy with applied pressure. In the MQW sample, the pressure response of the InGaN is dominated by the GaN layers, which leads to a significantly weaker pressure dependence as compared to the epilayer sample. Our results yield a pressure coefficient of 2.8×10−3 eV/kbar for the In0.15Ga0.85N/GaN MQW sample and 4.0×10−3 eV/kbar for the In0.11Ga0.89N epilayer. An abrupt decrease of PL intensity in both samples was observed at pressures above 100 kbar, indicating the carriers involved in the radiative recombination processes in the samples originate primarily from the adjacent GaN layers. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122266
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