Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Pulsed proton-beam annealing of Ir and IrxV100−x thin films on silicon (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 264-269 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A pulsed proton beam was used to anneal Ir and IrxV100−x thin films deposited on Si single crystals. Compound phases were produced by local melting of the metal-Si interface. Phase identification was carried out by x-ray diffraction; while component distribution was determined by Auger electron spectroscopy and Rutherford backscattering spectrometry. The morphology of the silicide layers was examined using transmission electron microscopy; and Schottky barrier heights were determined by current-voltage measurements. At intermediate deposited energy densities (∼0.5 J/cm2) a controlled interfacial reaction was observed. In the case of Ir/Si, amorphous IrSi as well as polycrystalline IrSi and Ir2Si3 was detected in the reacted region. For the codeposited IrxV100−x film, with x=80 and 50, the interfacial layer reacting with the Si substrate maintained the Ir : V ratio of the as-deposited film. This is in contrast to the case of furnace annealing where preferred accumulation of Ir is observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334798
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Ion beam induced epitaxy of deposited amorphous Si and Si-Ge films (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2342-2344 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The epitaxial recrystallization of amorphous electron beam deposited silicon and silicon-germanium layers on 〈100〉 silicon substrates was induced by a 2.5 MeV Ar beam irradiation in the temperature range of 200–400 °C. Even in films with bulk oxygen concentration of 0.5 at. %, layer-by-layer regrowth was observed with an order of magnitude reduction in growth rate when compared to clean, implanted amorphous silicon. Irradiation of codeposited Si-Ge amorphous layers results in the layer-by-layer regrowth of a Si88Ge12 alloy. Ion beam assisted epitaxy of Si and Si-Ge was found to be sensitive to interfacial cleanliness, but layer-by-layer regrowth was observed for samples that did not demonstrate regrowth under conventional furnace annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101523
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Thermal and ion beam induced reactions in Ni thin films on BP(100) (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1914-1915 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal and ion beam induced reactions in Ni thin films on BP(100) have been investigated. For thermally annealed samples the reaction of the Ni layer on BP started at temperatures between 350 and 400 °C and the formation of the crystalline phase corresponding to a composition of Ni4BP was observed at 450 °C. It was observed that oxygen in the Ni layer could retard the progress of the reaction. The full reaction of the Ni layer with BP induced by energetic heavy ion bombardments (600 keV Xe) was observed at 230 °C. The crystalline phase has the same composition and x-ray diffraction pattern for both thermal and ion-induced reactions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101494
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Proximity gettering with mega-electron-volt carbon and oxygen implantations (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1023-1025 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have demonstrated that a buried gettering layer can be formed with a single MeV ion implantation without damaging the top device region. The strong gettering efficiency of carbon implant and its linear dependence on dose are confirmed. A surprising feature of the carbon implanted layers is that no extended defects are formed after annealing for implant doses up to 2×1016 cm−2 at 3 MeV, compared to a layer of small precipitates and dislocations in the case of oxygen implantation. It is suggested that the carbon-related gettering centers are point defects or their clusters.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99233
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Grain growth in arsenic-implanted polycrystalline Si (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 2139-2141 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission electron microscopy and Rutherford backscattering were used with polycrystalline Si films implanted at 100 keV with 3×1016 arsenic ions/cm2. During annealing, grain growth occurred first in the implanted portion, then arsenic diffused into the unimplanted poly-Si, and finally grain growth occurred in this region. We believe that arsenic in the implanted region accumulates on grain boundaries during grain growth and subsequently diffuses along grain boundaries into the unimplanted region where grain growth occurs when arsenic can diffuse into the interior of the polycrystalline Si grains.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98972
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Solid phase epitaxy of a Ge-Si alloy on [111] Si through a Pd2Si layer (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 747-748 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Solid phase epitaxy of a Ge70Si30 alloy on [111]Si substrates was achieved in the amorphous Ge/Pd2Si/[111]Si system. Upon annealing at temperatures above 600 °C,the Ge transported through the silicide layer and formed a Ge-rich, Si-Ge epitaxial layer on top of the Si substrate. At the same time the Pd silicide layer exchanged positions with the Ge, leading to the final configuration of Pd2Si/Si-Ge/[111]Si. The crystallinity of Pd2Si had a major effect on the epitaxy of the Ge-Si alloy. On [100]Si where the Pd2Si was polycrystalline, epitaxial Ge-Si growth was not observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101794
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Ohmic contacts to n-GaAs using In/Pd metallization (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 326-327 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ohmic contacts to n-GaAs (Si doped at 2×1018 cm−3) with contact resistances of 0.7–1.5×10−6 Ω cm2 have been formed with deposited layers of In and Pd. The layers were sequentially evaporated and then annealed at 500 °C for 20 s to form In3Pd and a top layer of In. In addition a thin (≈200 A(ring)) reacted layer was formed at the GaAs interface. Uniform interface morphology was observed with no evidence of localized reaction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98429
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Void formation in thin Al films (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 424-426 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Al films deposited on Pt layers developed voids after annealing between 200 and 300 °C. Void formation in the Al was also observed when the Pt layer was deposited above the Al film. The amount of Al surrounding the voids increased as the voids grew. The void growth seems to saturate when all the Pt is consumed to form Pt2Al3, and the rate of void growth decreases as the thickness of the initial Al film increases. We believe the controlling mechanism is diffusion along the Al/Pt interface made possible by compound formation there.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98410
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Unlubricated friction and wear of an ion beam mixed, nitrogen-implanted Fe50Ti50 surface alloy on AISI 304 stainless steel (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 232-234 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nitrogen implantation was observed to significantly improve the dry sliding properties of an ion beam mixed Fe50Ti50 surface alloy on AISI 304 stainless steel. Implantation to the fluence of 1.7×1017 N/cm2 at 50 keV increased the wear resistance but a decreased friction coefficient was obtained only after few hundred cycles at the beginning of the pin-on-disk test. When nitrogen was implanted to the fluence of 3×1017 N/cm2 an improved wear resistance and decreased friction were detected throughout the test of 1000 cycles. In addition, good sliding properties were also found at higher loads in the high fluence, nitrogen-implanted samples. These results differ from those obtained following a nitrogen implantation into Ti-implanted iron or iron-based alloys and are attributed to higher titanium and nitrogen concentrations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98458
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Degradation of micron-sized CrSi2 lines on polycrystalline silicon (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 421-423 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal stability of CrSi2 fine lines on undoped chemical vapor deposited polycrystalline silicon was investigated. Heat treatments were in vacuum at temperatures between 500 and 950 °C. Hillock growth resulting from dissolution of silicon and subsequent regrowth in the silicide resulted in degradation at temperatures as low as 650 °C. We found that the degradation occurs preferentially at line edges. It is suggested that the edge preference is due to silicide deformation that is required at recrystallization sites.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98409
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...