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  • Electronic Resource  (2)
  • 61.80  (1)
  • 79.20  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Structure of crystallized layers by laser annealing of 〈100〉 and 〈111〉 self-implanted silicon samples (1978)
    Springer
    Applied physics 15 (1978), S. 365-369 
    Details
    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Channeling effect techniques with a 2.0 MeV He+ Rutherford backscattering and transmission electron microscopy were used to characterize the crystallized layers after Q-switched ruby laser irradiation of 4000 Å thick amorphous layer on 〈100〉 and 〈111〉 underlined crystal substrates. At a laser energy density of 2.5 J/cm2 the crystal layer on the 〈111〉 specimen contains a large density of stacking-faults, that on 〈100〉 specimen contains a very small amount of screw dislocation lines. High quality single-crystal layers have been obtained after irradiation at 3.5 J/cm2. From a comparison with the growth rate and defect structure observed in thermally annealed implanted-amorphous layers, we propose that crystal growth by 50 ns pulse laser annealing occurs by melting the amorphous layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00886154
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    TEM analysis of the influence of dose on damage behavior in MeV Au2+-implanted silicon (1992)
    Springer
    Applied physics 54 (1992), S. 124-131 
    Details
    ISSN: 1432-0630
    Keywords: 81.40 ; 61.70 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Extended lattice damage created by implantation of 3.6 MeV Au2+ ions has been investigated using transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS). Systematic observations of damage for Au2+ ions implanted with varying doses into silicon are explained in terms of a model. The origin of two distinct bands of extended defects is explained in terms of annealing of the central region of implant-damage, during the course of the implantation. Two distinct bands of Au precipitates are observed in high-dose implanted samples. This observation is explained as being the result, in part, of segregation of gold in front of a recrystallizing front, and in part, of gettering of dopant-atoms to nodes in a dislocation network. The network arises as a result of dynamic annealing of damaged crystalline silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323898
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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