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  • 21
    Electronic Resource
    Electronic Resource
    Studies of V, Nb, Cr, and Zr substituted 2:17 compounds and their carbides using neutron diffraction : The 41st annual conference on magnetism and magnetic materials (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 4542-4544 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Samples of Nd2Fe17−xTxCy with T=V, Nb, Cr, and Zr were prepared by melting of the constituent elements including C and studied by neutron diffraction. Comparing with their uncarbided counterparts, we found that the substituents transfer, more or less, from the 6c site to the 18f and 18h sites with the introduction of C atoms. This behavior appears to relate to the electronegativities between the C atoms and the early transition series elements because the 18f and 18h sites are near neighbors of the interstitial C site. However, the C effects in the V, Nb, Cr, and Zr samples are not as strong as those in Ti samples. SQUID measurements show that the Curie temperatures of these samples depend on both the interstitial C atoms and the substituents. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365421
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  • 22
    Electronic Resource
    Electronic Resource
    Effect of arsenic dimer species to silicon doping of GaAs layers prepared by molecular beam epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 391-393 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A strong dependence of Si doping on dimer arsenic (As2) flux and substrate temperature is observed for GaAs films grown by molecular beam epitaxy. Using an arsenic effusion cell with a cracker, Si doping levels are shown to depend on the cracking efficiency and substrate temperature. With the same Si cell temperature and GaAs growth conditions, the measured carrier concentration of the grown films decreases as the cracker temperature (cracker current) is increased and this dependence becomes stronger as the substrate temperature is increased. For samples grown at 660 °C, more than a factor of four decrease of the doping concentration is observed for the cracker current changing from 5 to 6.5 A. For those grown at 560 °C, there is only a weak dependence. Evidence is given to show that carbon contamination and Si self-compensation are not the causes of this effect. The formation of volatile SixAsy compound at the substrate surface is proposed to account for this phenomenon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104644
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  • 23
    Electronic Resource
    Electronic Resource
    Characterization of piezoelectric (111)B InGaAs/GaAs p-i-n quantum well structures using photoreflectance spectroscopy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1208-1210 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strained-layer (111)B In0.2Ga0.8As/GaAs p-i-n quantum well structures grown with exciton transitions well resolved at room temperature have been studied by photoreflectance spectroscopy. Using the reduced mass deduced from experiments, the built-in electric field in the barrier region is obtained from the above band-gap Franz–Keldysh oscillations. The strain-induced piezoelectric field is then determined directly from a comparison of the periods of Franz–Keldysh oscillations in different samples. Numerical solutions for the exciton transitions from the derived potential profiles are in good agreement with the experimental results. The piezoelectric constant is also determined using the piezoelectric field. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121015
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  • 24
    Electronic Resource
    Electronic Resource
    Highly insulative barium zirconate-titanate thin films prepared by rf magnetron sputtering for dynamic random access memory applications (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2659-2661 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline thin films of Ba(ZrxTi1−x)O3 with x=0–0.4 and a thickness of ∼180 nm were deposited on platinum-coated silicon substrates by rf magnetron sputtering at 500 °C. Ba-rich targets were used to prepare films of stoichiometric composition. The film having x=0.12 exhibited a satisfactory dielectric property of dielectric constant, k≈300, and dissipation factor, tan δ〈0.02, at frequencies from 103 to 106 Hz under ambient temperatures ranging from 20 to 180 °C. More importantly, the film showed a very stable and highly insulative characteristic against applied voltage. The leakage current density J increases only smoothly to a value less than 10−7 A/cm2 followed by an Ohmic relation of J=σE with σ=1.4×10−14 (Ω cm)−1 up to an extremely high electric field E of 5.6 MV/cm without any sign of abrupt increase of leakage current or electrical breakdown. Also, no time-dependent electric degradation was observed for the film subjected to an electric field as high as 5 MV/cm at room temperature up to 3600 s of measurement. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117550
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  • 25
    Electronic Resource
    Electronic Resource
    Observation of ion gettering effects in high-temperature superconducting oxide material (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1629-1630 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion gettering effect has been observed in high-temperature superconducting YBa2Cu3O7 material. Silicon ions were implanted into the material and subsequent high-temperature annealing produced ion movement from a low concentration region to a higher concentration region where the damage of the crystal structure is severe. This gettering effect could be used to make a superconductor-nonsuperconductor-superconductor trilayer structure within a single YBCO film. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117053
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  • 26
    Electronic Resource
    Electronic Resource
    Large Stark shifts of the local to global state intersubband transitions in step quantum wells (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1986-1988 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Large Stark shifts of intersubband transitions in a step quantum well are observed for the first time. The Stark shifts are ∼8 and 7 meV at ∼18 kV/cm for the 1→2 and 1→3 intersubband transitions, respectively, while the Stark shift of a similar transition in a square quantum well is only about 0.5 meV under the same bias condition. The intersubband transitions in step quantum wells can be either red or blue Stark shifted depending on the direction of the applied electric field. The large Stark shifts of intersubband transitions in the step quantum wells can be exploited for the fabrication of optical modulators operating in the range from mid to far infrared.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103193
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  • 27
    Electronic Resource
    Electronic Resource
    A neutron diffraction structural study of R2Fe17−xAlx(C) (R=Tb, Ho) alloys : The 7th joint MMM-intermag conference on magnetism and magnetic materials (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 6914-6916 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The title compounds were confirmed to have the Th2Zn17 type rhombohedral structure (space group R3¯m) except for Ho2Fe16Al and Ho2Fe15Al2 which have the Th2Ni17 type hexagonal structure (space group P63/mmc) while Ho2Fe13Al3 is a mixture of the two phases with the hexagonal phase dominant. A larger unit cell favors the formation of an ordered rhombohedral phase rather than a disordered hexagonal phase. Both the substitution of Fe by Al and the insertion of C can expand the cell and lead to the formation of an ordered rhombohedral phase. The site preferences of Al are somewhat different with and without C. In both series, C is mainly found at the 9e interstitial site. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367567
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  • 28
    Electronic Resource
    Electronic Resource
    Comment on "Constant-current-density model for the anomalous Hall effects in Hg0.8Cd0.2Te'' [Appl. Phys. Lett. 53, 307 (1988)] (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1480-1480 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101329
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  • 29
    Electronic Resource
    Electronic Resource
    Inverted surface effect of p-type HgCdTe (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1836-1838 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By surface passivation using anodic sulfidization, we demonstrated that the inverted surface effect which gives rise to negative Hall coefficients commonly measured in p-type HgCdTe at low temperatures can be eliminated. Our results of Hall measurements as a function of magnetic field at 77 K and computer simulations allow us to distinguish two different existing models (with shunting or nonshunting n-type inversion layer) of the inverted surface effect. Bulk and surface transport parameters such as hole concentration, hole mobility, surface electron concentration, and surface electron mobility have been derived from computer best fits of experimental Hall coefficient curves.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98486
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  • 30
    Electronic Resource
    Electronic Resource
    Photoreflectance spectroscopy of strained-layer (111)B InGaAs/GaAs quantum well diodes (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1595-1601 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InGaAs/GaAs (111)B quantum well p-i-n structures grown by gas source molecular beam epitaxy have been investigated with a photoreflectance technique. Using the reduced mass deduced from experiments, the built-in electric field is obtained from the above band-gap Franz–Keldysh oscillations (FKOs). The strain-induced piezoelectric field is then determined directly from the comparison of the periods of FKOs in different samples. Numerical solutions for exciton transition energies with the experimentally derived potentials are in good agreement with experimental results. Hence, the piezoelectric constant can be determined using the piezoelectric field. The temperature dependences of the quantized energy levels indicate that the influence of temperature on exciton transitions is essentially the same as that of the gaps of the relevant bulk constituent materials. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368229
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