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  • 1
    Electronic Resource
    Electronic Resource
    Intersubband all-optical limiter based on thermally induced intervalley transfer (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7662-7665 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose an all-optical limiter based on the thermally induced intervalley transfer of electrons from Γ-valley states with forbidden normal-incidence intersubband interactions to L-valley states which absorb strongly. Detailed modeling of the device performance in the short-pulse regime (≤100 ns) yields that the output intensity for a limiter with only 10% insertion loss at low excitation levels will remain clamped over a dynamic range of 25–40.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365344
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  • 2
    Electronic Resource
    Electronic Resource
    Optimum growth parameters for type-II infrared lasers (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1796-1799 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface, structural, and optical properties of InAs/InGaSb/AlSb mid-infrared lasers grown by molecular beam epitaxy have been systematically studied, respectively, by Nomarski differential interference contrast, high-resolution x-ray diffraction, and variable-temperature photoluminescence. It is found that the optimum growth temperature is between 400 and 450 °C, based on the calibrated transmission thermometry. In addition, the impact of interfacial bond type and Sb sources has been investigated. A 5.91 μm laser, grown with the optimal growth parameters, exhibits a maximum cw operating temperature of 210 K. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370971
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  • 3
    Electronic Resource
    Electronic Resource
    Band parameters for III–V compound semiconductors and their alloys (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5815-5875 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1368156
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  • 4
    Electronic Resource
    Electronic Resource
    High-speed spin-polarized intersubband lasers (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4734-4739 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spin-polarized intersubband lasers based on optically pumped type-II antimonide quantum wells in a magnetic field are proposed. Complete discretization of the electron energy spectrum is predicted to extend the electron lifetime considerably. Continuous-wave room-temperature operation is projected for both interband and intersubband pumping configurations lasing at λ=16–24 μm. Furthermore, the parasitic capacitances associated with electrical injection are eliminated, and the large differential gain and fast intrinsic time scale should give modulation bandwidths in excess of 100 GHz. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371437
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  • 5
    Electronic Resource
    Electronic Resource
    Type-II quantum-well "W" lasers emitting at λ=5.4–7.3 μm (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4729-4733 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of optically pumped type-II quantum-well "W" lasers with wavelengths ranging from 5.4 to 7.3 μm operated at temperatures up to at least 220 K for pulsed operation. The peak output power at 80 K was 1.1 W/facet for a device emitting at λ=7.0 μm. Internal losses were characterized for the temperature range between 40 and 190 K. Auger coefficients determined from an analysis of the threshold pump intensities were found to be suppressed by up to an order of magnitude compared to type-I III–V semiconductors with the same energy gaps. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371436
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  • 6
    Electronic Resource
    Electronic Resource
    Far-field characteristics of mid-infrared angled-grating distributed feedback lasers (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6997-7005 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The far-field emission characteristics of mid-infrared angled-grating distributed-feedback (α-DFB) lasers with W active regions are calculated using a self-consistent beam-propagation formalism that is more general than previous analyses. The theoretical projections are compared with the results of an experimental study of optically pumped α-DFB devices. Near-diffraction-limited beam quality is obtained both theoretically and experimentally for pump stripes ≤50 μm wide. While simulations employing the theoretical linewidth enhancement factor of 1.7 for the homogeneously-broadened W-laser gain spectrum predict that the good beam quality should be retained for stripes as wide as (approximate)200 μm, the data indicate a much more rapid degradation. That finding can be reproduced only by assuming that inhomogeneous broadening increases the structure's linewidth enhancement factor to (approximate)5. The experiments and theory also yield a steering of the output beam to off-normal angles as large as 6° when temperature tuning shifts the gain peak away from the grating resonance. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1326858
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  • 7
    Electronic Resource
    Electronic Resource
    Improved quantitative mobility spectrum analysis for Hall characterization (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 4966-4973 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present an improved quantitative mobility spectrum analysis (i-QMSA) procedure for determining free electron and hole densities and mobilities from magnetic-field-dependent Hall and resistivity measurements on bulk or layered semiconductor samples. The i-QMSA technique is based on a fundamentally new approach, which optimizes the fit to the conductivity tensor components and their slopes by making those adjustments in the mobility spectra that result in the greatest error reduction. Empirical procedures for manipulating the mobility spectra are also introduced, with the dual purpose of reducing the error of the fit and simplifying the shape of the spectra to minimize the presence of unphysical artifacts. A fully automated computer implementation of the improved QMSA is applied to representative synthetic and real data sets involving various semiconductor material systems. These results show that, as compared with previous approaches, the presented algorithm maximizes the information that may be extracted from a given data set, and is suitable for use as a standard tool in the characterization of semiconductor material and device transport properties. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368741
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  • 8
    Electronic Resource
    Electronic Resource
    Simulation of mid-infrared HgTe/CdTe quantum-well vertical-cavity surface-emitting lasers (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 4286-4291 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We theoretically show the feasibility of optically and electrically pumped Hg-based vertical-cavity surface-emitting lasers (VCSELs) that emit at midwave-infrared wavelengths up to thermoelectric cooler temperatures. The maximum operating temperature is significantly enhanced by employing a multiple quantum-well active region with very thin (20–30 Å) HgTe wells engineered to yield a strong suppression of both Auger recombination and intervalence free-carrier absorption. Hg0.65Cd0.35Te/Hg0.1Cd0.9Te distributed Bragg reflectors are employed for one or both of the mirrors defining the optical cavity. Detailed numerical simulations of VCSELs emitting at λ(approximate)4.3 μm predict that for optical pumping at 1.06 μm, a maximum operating temperature of 220 K should be achievable for pulsed operation and 160 K in cw mode, with a cw power output of up to 2.6 mW per array element at 100 K. Injection VCSELs are predicted to operate up to 200 K for pulsed operation and 105 K for quasi-cw with a 10% duty cycle. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367187
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  • 9
    Electronic Resource
    Electronic Resource
    Role of internal loss in limiting type-II mid-IR laser performance (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 2384-2391 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report an experimental and theoretical investigation of internal losses in optically pumped type-II lasers with InAs/GaSb/Ga1−xInxSb/GaSb superlattice active regions. Whereas the losses are found to be moderate at 100 K (11–14 cm−1), they increase rapidly with increasing temperature (to 50–120 cm−1 at 200 K). Comparison with a detailed numerical simulation shows that the internal losses play a much more important role than Auger recombination or carrier/lattice heating in limiting the laser performance at high temperatures. Calculations of the temperature-dependent intervalence absorption cross sections show that losses of the magnitude observed experimentally can easily occur if one does not take special care to avoid resonances in all regions of the Brillouin zone. Practical design guidelines are presented. The superlattice lasers yield maximum peak output powers of up to 6.5 W per facet at 100 K and 3.5 W per facet at 180 K, threshold incident pump intensities as low as 340 W/cm2 at 100 K, and Shockley–Read lifetimes 〉30 ns at 100 K. The Auger coefficients are suppressed (≤1.6×10−27 cm6/s at T=260 K) despite the intervalence resonances which produce the high internal losses. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366997
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  • 10
    Electronic Resource
    Electronic Resource
    Boundary roughness scattering in single and coupled quantum wires in a magnetic field (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 3881-3887 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate magnetic-field-dependent velocity relaxation due to boundary-roughness scattering in quantum wires, using a two-dimensional (2D) finite-difference wave-packet propagation technique. We find that for low disorder correlation lengths and far away from density-of-states singularities associated with subband minima and saddle points, the Born approximation adequately reproduces the qualitative features of the more general 2D results. However, naive application of the Born approximation in regions where disorder-induced broadening or higher-order scattering become important can lead to substantial errors. In particular, the mobility enhancement associated with the opening of a quasigap in coupled quantum wire structures can be overestimated by as much as several orders of magnitude. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365691
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