Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Band parameters for III–V compound semiconductors and their alloys (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5815-5875 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1368156
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    High-speed spin-polarized intersubband lasers (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4734-4739 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spin-polarized intersubband lasers based on optically pumped type-II antimonide quantum wells in a magnetic field are proposed. Complete discretization of the electron energy spectrum is predicted to extend the electron lifetime considerably. Continuous-wave room-temperature operation is projected for both interband and intersubband pumping configurations lasing at λ=16–24 μm. Furthermore, the parasitic capacitances associated with electrical injection are eliminated, and the large differential gain and fast intrinsic time scale should give modulation bandwidths in excess of 100 GHz. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371437
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Intersubband all-optical limiter based on thermally induced intervalley transfer (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7662-7665 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose an all-optical limiter based on the thermally induced intervalley transfer of electrons from Γ-valley states with forbidden normal-incidence intersubband interactions to L-valley states which absorb strongly. Detailed modeling of the device performance in the short-pulse regime (≤100 ns) yields that the output intensity for a limiter with only 10% insertion loss at low excitation levels will remain clamped over a dynamic range of 25–40.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365344
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Auger coefficients in type-II InAs/Ga1−xInxSb quantum wells (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2857-2859 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two different approaches, a photoconductive response technique and a correlation of lasing thresholds with theoretical threshold carrier concentrations have been used to determine Auger lifetimes in InAs/GaInSb quantum wells. For energy gaps corresponding to 3.1–4.8 μm, the room-temperature Auger coefficients for seven different samples are found to be nearly an order-of-magnitude lower than typical type-I results for the same wavelength. The data imply that at this temperature, the Auger rate is relatively insensitive to details of the band structure. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122609
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    High-temperature type-II superlattice diode laser at λ=2.9 μm (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3607-3609 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A 2.9 μm diode laser with InAs/GaSb/Ga0.75In0.25Sb/GaSb superlattice active region displays a maximum operating temperature of 260 K. At 200 K, the threshold current density is 1.1 kA/cm2 and the quantum efficiency is 〉15%. The peak output power per facet exceeds 800 mW at 100 K and 200 mW at 200 K for a 0.05% duty cycle. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120455
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Midinfrared vertical-cavity surface-emitting laser (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3483-3485 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a type-II antimonide midinfrared vertical-cavity surface-emitting laser. The emission wavelength of 2.9 μm is nearly independent of temperature (dλ/dT(approximate)0.07 nm/K) and the multimode linewidth is quite narrow (3.5 nm). The pulsed threshold power at 86 K is as low as 22 mW for a 30 μm spot. Lasing is observed up to T=280 K, and the peak output power from a 600 μm spot exceeds 2 W up to 260 K. The differential power conversion efficiency is 〉1% at 220 K. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120366
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Role of internal loss in limiting type-II mid-IR laser performance (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 2384-2391 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report an experimental and theoretical investigation of internal losses in optically pumped type-II lasers with InAs/GaSb/Ga1−xInxSb/GaSb superlattice active regions. Whereas the losses are found to be moderate at 100 K (11–14 cm−1), they increase rapidly with increasing temperature (to 50–120 cm−1 at 200 K). Comparison with a detailed numerical simulation shows that the internal losses play a much more important role than Auger recombination or carrier/lattice heating in limiting the laser performance at high temperatures. Calculations of the temperature-dependent intervalence absorption cross sections show that losses of the magnitude observed experimentally can easily occur if one does not take special care to avoid resonances in all regions of the Brillouin zone. Practical design guidelines are presented. The superlattice lasers yield maximum peak output powers of up to 6.5 W per facet at 100 K and 3.5 W per facet at 180 K, threshold incident pump intensities as low as 340 W/cm2 at 100 K, and Shockley–Read lifetimes 〉30 ns at 100 K. The Auger coefficients are suppressed (≤1.6×10−27 cm6/s at T=260 K) despite the intervalence resonances which produce the high internal losses. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366997
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Simulation of mid-infrared HgTe/CdTe quantum-well vertical-cavity surface-emitting lasers (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 4286-4291 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We theoretically show the feasibility of optically and electrically pumped Hg-based vertical-cavity surface-emitting lasers (VCSELs) that emit at midwave-infrared wavelengths up to thermoelectric cooler temperatures. The maximum operating temperature is significantly enhanced by employing a multiple quantum-well active region with very thin (20–30 Å) HgTe wells engineered to yield a strong suppression of both Auger recombination and intervalence free-carrier absorption. Hg0.65Cd0.35Te/Hg0.1Cd0.9Te distributed Bragg reflectors are employed for one or both of the mirrors defining the optical cavity. Detailed numerical simulations of VCSELs emitting at λ(approximate)4.3 μm predict that for optical pumping at 1.06 μm, a maximum operating temperature of 220 K should be achievable for pulsed operation and 160 K in cw mode, with a cw power output of up to 2.6 mW per array element at 100 K. Injection VCSELs are predicted to operate up to 200 K for pulsed operation and 105 K for quasi-cw with a 10% duty cycle. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367187
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Boundary roughness scattering in single and coupled quantum wires in a magnetic field (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 3881-3887 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate magnetic-field-dependent velocity relaxation due to boundary-roughness scattering in quantum wires, using a two-dimensional (2D) finite-difference wave-packet propagation technique. We find that for low disorder correlation lengths and far away from density-of-states singularities associated with subband minima and saddle points, the Born approximation adequately reproduces the qualitative features of the more general 2D results. However, naive application of the Born approximation in regions where disorder-induced broadening or higher-order scattering become important can lead to substantial errors. In particular, the mobility enhancement associated with the opening of a quasigap in coupled quantum wire structures can be overestimated by as much as several orders of magnitude. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365691
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Far-field characteristics of mid-infrared angled-grating distributed feedback lasers (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6997-7005 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The far-field emission characteristics of mid-infrared angled-grating distributed-feedback (α-DFB) lasers with W active regions are calculated using a self-consistent beam-propagation formalism that is more general than previous analyses. The theoretical projections are compared with the results of an experimental study of optically pumped α-DFB devices. Near-diffraction-limited beam quality is obtained both theoretically and experimentally for pump stripes ≤50 μm wide. While simulations employing the theoretical linewidth enhancement factor of 1.7 for the homogeneously-broadened W-laser gain spectrum predict that the good beam quality should be retained for stripes as wide as (approximate)200 μm, the data indicate a much more rapid degradation. That finding can be reproduced only by assuming that inhomogeneous broadening increases the structure's linewidth enhancement factor to (approximate)5. The experiments and theory also yield a steering of the output beam to off-normal angles as large as 6° when temperature tuning shifts the gain peak away from the grating resonance. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1326858
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...