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  • 1
    Electronic Resource
    Electronic Resource
    Synthesis and biological properties of .alpha.-mono and .alpha.-difluoromethyl derivatives of tryptophan and 5-hydroxytryptophan (1988)
    s.l. : American Chemical Society
    Journal of medicinal chemistry 31 (1988), S. 30-36 
    Details
    ISSN: 1520-4804
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jm00396a007
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  • 2
    Electronic Resource
    Electronic Resource
    Quantitative assessment of Be acceptors in GaAs by local vibrational mode spectroscopy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 971-974 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Be-doped epitaxial layers of GaAs grown by molecular beam epitaxy have been studied by local vibrational mode spectroscopy combining infrared absorption and Raman scattering. Calibration factors for both experimental techniques have been derived which enable quantitative assessments to be made of the concentrations of Be acceptors in GaAs. In Raman spectroscopy the detection limit is ≈ 3×1018 cm−3 for as-grown layers only 10 nm in thickness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347289
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  • 3
    Electronic Resource
    Electronic Resource
    Annealing in a mercury bath of In+ and B+ implanted Cd0.23Hg0.77Te studied by resonant Raman scattering and Hall effect measurements (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2739-2742 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Resonant Raman scattering by longitudinal optical phonons has been used to study the effect of annealing in a hot Hg bath on 113In+ and 11B+ implanted Cd0.23Hg0.77Te. Up to the highest doses of 1×1013 cm−2 for In and 1×1014 cm−2 for B, respectively, Raman spectroscopy indicates a full recovery of the crystalline perfection for annealing temperatures around 320 °C and annealing times ≥10 min. This recovery is accompanied by an electrical activation of the implants. Control experiments have been carried out to prove that the electrical activity is not due to residual lattice damage and that the immersion in the Hg bath by itself has no effect on the Raman spectrum.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353047
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  • 4
    Electronic Resource
    Electronic Resource
    Raman spectroscopic and Hall effect analysis of the free electron concentration in GaAs with ultrahigh silicon doping (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5023-5026 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heavily silicon-doped GaAs grown by molecular beam epitaxy has been studied by combined coupled plasmon-phonon mode Raman spectroscopy and Hall effect measurements. Free electron concentrations up to 2×1019 cm−3 have been achieved with the dopant atoms being incorporated dominantly on Ga sites (≥90%) as measured by local vibrational mode Raman spectroscopy. To extract quantitative information from the plasmon-phonon Raman spectra, these spectra have been fitted using the temperature-dependent Lindhard–Mermin dielectric function including the nonparabolicity of the conduction band and wave vector nonconservation due to the absorption of the incident and scattered light. The excellent agreement found between Hall effect and Raman measurements demonstrates that consistent data on dopant incorporation and activation can be obtained, if band structure effects are accounted for appropriately in the analysis of the Raman spectra.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353771
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  • 5
    Electronic Resource
    Electronic Resource
    Electrical, magnetic circular dichroism and Raman spectroscopic investigations on the EK2 double acceptor (78/203 meV) in GaAs (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1454-1462 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical and optical properties of liquid encapsulated Czochralski grown, Ga-rich (melt composed of 55% Ga and 45% As), p-type GaAs were studied by the Hall effect, capacitance-voltage measurements, magnetic circular dichroism, optically detected electron spin resonance, deep level transient spectroscopy (DLTS), and Raman spectroscopy. Two levels with ionization energies of 78 and 203 meV above the valence band edge were examined and fitted to the singly and doubly charged ground states of a double acceptor which is designated an EK2 center. The Raman scattering cross sections for electronic excitations were determined from the defect concentrations measured by DLTS. The EK2 center is electrically passivated via a remote microwave hydrogen plasma technique. It can be reactivated by heat treatments with an activation energy of Ea=1.4 eV. The concentrations of the two levels were equal to each other in four as-grown samples, in samples following passivation, and at all stages during the subsequent reactivation. The observations are inconsistent with previous suggestions that the levels are due to two separate defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347287
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  • 6
    Electronic Resource
    Electronic Resource
    Raman and ion channeling analysis of damage in ion-implanted GaAs: Dependence on ion dose and dose rate (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2591-2595 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman scattering and ion channeling techniques were used to investigate the damage in GaAs implanted at room temperature with 100-keV Si+ ions. The ion-induced damage was analyzed for different ion doses and dose rates (current densities). The development of different damage components was monitored by comparing a Raman signal which is specific to amorphization in GaAs to ion channeling results which are sensitive to small-volume crystalline defects, as well as to amorphous regions. Raman analysis showed that the rate of growth of the amorphous fraction with implant dose was comparable to the growth rate of the total damage as determined by ion channeling. However, while Raman analysis indicated a weak dependence of damage on dose rate, the ion channeling results showed a substantially stronger dependence. These results demonstrate that the damage morphology in GaAs is dependent upon both dose and dose rate, and that the dose-rate-dependent component of the total damage consists primarily of crystalline defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351077
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  • 7
    Electronic Resource
    Electronic Resource
    Crystallization of amorphous Zr2Pd and Zr3Rh alloys (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 545-553 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal stability behavior of the metallic glasses a-Zr2Pd and a-Zr3Rh was studied by means of x-ray diffraction, differential scanning calorimetry (DSC), and isothermal annealing. While several a-Zr2Pd alloys each exhibit two exothermic peaks during the DSC heating sequence, three different types of exothermic behavior have been observed for a-Zr3Rh alloys with nominally identical stoichiometries. These variations in DSC behavior are probably related to different conditions during the rapid quenching procedures. The three types of differential scanning calorimeter behavior shown by a-Zr3Rh alloys include (1) two peaks of about 715 K and 790 K, (2) a single large peak at about 730 K, and (3) a strong peak at about 725 K with a much weaker peak at about 850 K. The a-Zr3Rh alloys of type (1) crystallize to form a tetragonal lattice that is a newly identified Zr3Rh phase of the D0e structure type. The a-Zr3Rh alloys of types (2) and (3) crystallize first to form a face-centered cubic lattice which appears to be an E93-type structure. Both the D0e and E93 phases are metastable and ultimately anneal to the Zr2Rh phase with the tetragonal C16-type structure. The formation of the Zr2Rh phases with either the C16 or E93 structure is accompanied by α-Zr. The a-Zr2Pd alloys undergo a two-step crystallization with the initial formation of a disordered body-centered-cubic phase followed by the tetragonal Zr2Pd phase with the C11b-type structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334735
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  • 8
    Electronic Resource
    Electronic Resource
    N-induced vibrational modes in GaAsN and GaInAsN studied by resonant Raman scattering (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 5027-5031 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Vibrational modes introduced by the incorporation of N into GaAs and GaInAs have been studied by Raman spectroscopy on samples grown by molecular-beam epitaxy using a rf nitrogen plasma source. When proceeding from GaAs1−xNx to Ga1−yInyAs1−xNx with x≤0.04 and y≤0.12, the nitrogen-induced vibrational mode near 470 cm−1 observed in GaAsN was found to broaden and to split into up to three components with one component at a frequency higher than that of the Ga–N mode in GaAsN. This observation shows that the incorporation of In into GaAsN strongly affects the local bonding of the N atoms by changing the local strain distributions as well as the formation of a significant fraction of In–N bonds. The resonant enhancement in the scattering cross section of the Ga–N vibrational mode, observed in low N-content GaAs1−xNx (x(approximate)0.01) for incident photon energies matching the mostly N-related E+ transition at around 1.8 eV, was found to broaden significantly upon increasing N content as well as upon the addition of In to form GaInAsN. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1412277
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  • 9
    Electronic Resource
    Electronic Resource
    Resonant Raman scattering from buried AlxGa1−xN (x≤0.17) layers in (Al, Ga, In)N heterostructures (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2853-2856 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Resonant Raman scattering from AlxGa1−xN (x≤0.17) layers in (Al, Ga, In)N heterostructures has been studied using optical excitation at a photon energy of hνL=3.72 eV (333.61 nm). Tuning of the AlGaN band-gap energy, and thus of the resonance condition, was achieved by variation of the sample temperature. A pronounced outgoing resonance behavior was observed for first- and second-order Raman scattering by the AlGaN A1(LO) phonon, which allows a separation of the AlGaN LO phonon signal from the corresponding GaN phonon line even in the presence of much thicker surrounding GaN layers. The composition dependence of the AlxGa1−xN A1(LO) phonon mode was determined to ωLO(x)=734+356.8x−814.7x2 (cm−1) for the present excitation conditions (hνL=3.72 eV) and composition range (x≤0.17). The use of resonantly enhanced Raman scattering by the AlGaN A1(LO) phonon allowed us to assess nondestructively the composition of the AlGaN cladding layers in an (Al, Ga, In)N laser structure, even though the Raman spectrum recorded for nonresonant subband-gap excitation was completely dominated by scattering from the much thicker GaN layers in the structure. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372268
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  • 10
    Electronic Resource
    Electronic Resource
    Raman and dielectric function spectra of strained GaAs1−xSbx layers on InP (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8522-8525 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectroscopy and variable angle spectroscopic ellipsometry (SE) were used to study pseudomorphically strained GaAs1−xSbx layers (0.22≤x≤0.65) grown on InP by metal-organic chemical vapor deposition. From the Raman spectra the composition dependence of the GaAs-like LO phonon mode was deduced. For comparison with literature data for unstrained GaAs1−xSbx, the strain-induced frequency shift of the GaAs-like LO phonon was calculated and subtracted from the present experimental data. When corrected for strain effects the composition dependent GaAs-like LO phonon frequency could be fitted by the linear relation ωLO=292.3−51x(cm−1) for the present range of alloy compositions. The pseudodielectric function spectra, deduced from SE measurements covering the range of photon energies from 0.8 to 5.0 eV, were fitted by a multilayer model employing a set of parametric oscillators to describe the GaAs1−xSbx dielectric function. From the resulting parametric dielectric functions the composition dependence of the E1 and E1+Δ1 critical point energies was deduced for pseudomorphically strained GaAs1−xSbx on InP and, after correction for strain effects on the interband transitions, also for unstrained GaAs1−xSbx. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373572
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