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  • 1
    Electronic Resource
    Electronic Resource
    Retarded and enhanced dopant diffusion in silicon related to implantation-induced excess vacancies and interstitials (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1834-1840 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of the lattice defects induced by silicon-ion implantation on the B, P, As, and Sb diffusivities is investigated after annealing between 700 and 900 °C. The nature and depth position of the residual implantation defects in undoped samples is determined by the analysis of the rocking curves obtained by triple-crystal x-ray diffraction and transmission electron microscopy. In particular, besides the interstitial dislocation loops and clusters below the original amorphous-crystal interface, the epitaxial regrowth of the amorphized silicon leaves a vacancy-rich surface layer and a deeper region enriched in interstitials. These regions correspond to those where Monte Carlo simulations of defect production foresee excess point defects. Accordingly, as the dopant is located in correspondence with the vacancy or interstitial clusters, different behaviors of anomalous diffusion are observed. In the deep region where an interstitial excess is present, B and P show marked enhanced diffusion, while only a small enhancement is exhibited by As and Sb. On the contrary, retarded diffusivity for B and light enhancement for As and Sb are observed in the surface layer. These different trends are consistent with the different accepted contributions of vacancies and interstitials to the diffusion mechanisms of the investigated dopants.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338026
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  • 2
    Electronic Resource
    Electronic Resource
    Interaction between point defects and dislocation loops as the phenomenon able to reduce anomalous diffusion of phosphorus implanted in silicon (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 98-104 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phosphorus was implanted at doses below amorphization threshold in virgin silicon and in silicon containing interstitial dislocation loops. The loops were formed by high-dose Si+ implantation and 900 °C, 30 min annealing. Triple-crystal x-ray diffraction and junction depth measurements combined with secondary ion mass spectrometry were used for the analysis of implant defects and the determination of P distribution, respectively. Annealings were carried out in furnace in the range between 600 and 900 °C, and by electron beam at 1000 °C for 10 s. The results obtained show that the presence of loops strongly reduces the phosphorus anomalous diffusion. This phenomenon is the consequence of the absorption by the loops of the interstitial excess coming from dissolution of the clusters produced by the P implant. The influence of the loop position with respect to the P distribution on the extent of P diffusivity is analyzed and discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343382
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  • 3
    Electronic Resource
    Electronic Resource
    X-ray reflection properties of annealed silicon single crystals : Proceedings of the 4th international conference on synchrotron radiation instrumentation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 907-910 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We present a series of x-ray reflectivity measurements performed on annealed Czochralski grown silicon (ACS) crystals in the energy range E〈50 keV using sealed tube sources. To analyze the origin of the enhanced reflectivity of this material compared to perfect, FZ-grown silicon, double and triple crystal diffractometer measurements were carried out. The results are discussed with regard to the application of ACS for monochromatization of synchrotron radiation in the mentioned energy range.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143775
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  • 4
    Electronic Resource
    Electronic Resource
    Effects of salinity on turgor pressure and fertility in Tolypella (Characeae) (1996)
    Oxford, UK : Blackwell Publishing Ltd
    Plant, cell & environment 19 (1996), S. 0 
    Details
    ISSN: 1365-3040
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: We present the first experimental results on salinity tolerance and regulation mechanisms in the genus Tolypella. The two species investigated, T. nidifica and T. glomerata, regulate turgor pressure with almost complete effectiveness by adjustment of K+ and CT concentrations. Sucrose is also involved. The mechanism is basically identical to the mechanism of turgor pressure regulation previously identified in representatives of the genera Chara and Lamprothamnium. Since Chara and Lamprothamnium on the one hand and Tolypella on the other belong to different phylogenetic branches that separated early in the geological history of the Characeae, the K+ regulation mechanism can be assumed to represent an ancient pattern derived from a salt-tolerant common ancestor. Furthermore, our experiments provide evidence that salinity is a limiting factor for fertility in both T. nidifica and T. glomerata. Although the onset of gametangia covers the whole range of salinities tested here (0–29 psu), 12psu was the inhibitory level for the formation of mature oospores. Fertilization is probably disturbed by an increase in salinity. An inability to reproduce sexually under euryhaline conditions could explain why the distribution of the two species is restricted to oligo- and mesohaline environments, despite the wide range of salinity tolerance of their vegetative apparatus.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-3040.1996.tb00423.x
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  • 5
    Electronic Resource
    Electronic Resource
    Salinity response of a freshwater charophyte, Chara vulgaris (1990)
    Oxford, UK : Blackwell Publishing Ltd
    Plant, cell & environment 13 (1990), S. 0 
    Details
    ISSN: 1365-3040
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: Abstract. Chara vulgaris L. growing in an oligohaline lake was adapted to laboratory conditions and subjected to long-term salinity treatments ranging from 0 to 350 mol m 3 NaCl added to the lake water (40–680 mosmol kg 1). Osmotic potential and concentration of the main osmotically active solutes (K+, Na+, Mg2+, Cl and sucrose) in the vacuolar sap of the central internodal cells were estimated. C. vulgaris did regulate turgor but incompletely. Turgor decreased from 335 mosmol kg 1 under control conditions to 52–111 mosmol kg 1 at 350 mol m 3 NaCl. The enhancement of πi was achieved by increase in both ions and sucrose. Sterile and fertile plants differed in their response to osmotic stress. In sterile plants, the ions accounted for about 87% of the vacuolar osmotic potential. The increase of πi under osmotic stress was exclusively due to an accumulation of Na+ and Cl-. In fertile plants, sucrose accounted for about 35% of πi and ions for about 51% Under osmotic stress, sucrose content increased together with the ionic content of Na+ and Cl-.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-3040.1990.tb01284.x
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  • 6
    Electronic Resource
    Electronic Resource
    Ecophysiological investigations of Chara vulgaris L. grown in a brackish water lake: ionic changes and accumulation of sucrose in the vacuolar sap during sexual reproduction (1988)
    Oxford, UK : Blackwell Publishing Ltd
    Plant, cell & environment 11 (1988), S. 0 
    Details
    ISSN: 1365-3040
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: Abstract Chara vulgaris L. growing in a brackish water lake was investigated in a field study during the main growth season (May to October 1985). Sucrose content and the ionic concentrations of the cations Na+, K+, Mg2+ and Ca2+ and the anions Cl− and SO42- of the vacuolar sap were estimated. Sucrose concentration in the vacuolar sap of vegetative growing plants was negligible, but with the beginning of the sexual reproduction period (fructification) the sucrose content increased from about 2 mol m−3 to 110 mol m−3. This level remained constant until the end of the fructification period. In spite of the increase of the sucrose concentration the osmotic potential of the vacuolar sap was constant. This was achieved by changing the ionic concentrations accordingly; in old or vegetative growing plants the ionic content accounted for about 80% of the vacuolar osmotic potential, but was about 63% during fructification. Sucrose is considered as a major photosynthate to supply the developing antheridia and oogonia and to serve as a precursor for the starch stored in the eggs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-3040.1988.tb01778.x
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  • 7
    Electronic Resource
    Electronic Resource
    Characterization of process-induced defects in silicon with triple-crystal diffractometry (1985)
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 41 (1985), S. 223-227 
    Details
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: With a triple-crystal diffractometer of parallel (n, -n, n) setting, X-ray diffuse scattering has been observed from a silicon crystal containing process-induced defects. It is shown that the use of a conventional X-ray tube with 1.5 kW power guarantees the registration of defects with characteristic size R ∼ 1.8 μm and concentration C0 ∼ 1 × 109 cm-3. The theoretical simulations of the diffuse scattering were carried out based on the Huang theory. The data of TEM investigations show stacking faults of interstitial type with radius RL ∼ 0.9 μm and concentration CL 2 × 109cm-3, as well as small precipitates, in the specimen.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0108767385000502
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  • 8
    Electronic Resource
    Electronic Resource
    Reduction of phosphorus transient enhanced diffusion due to extended defects in ion implanted silicon
    Amsterdam : Elsevier
    Nuclear Inst. and Methods in Physics Research, B 39 (1989), S. 347-351 
    Details
    ISSN: 0168-583X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0168-583X(89)90800-8
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  • 9
    Electronic Resource
    Electronic Resource
    Defect distribution in ion implanted silicon: comparison between Monte Carlo simulation and triple crystal X-ray measurements
    Amsterdam : Elsevier
    Nuclear Inst. and Methods in Physics Research, B 22 (1987), S. 497-498 
    Details
    ISSN: 0168-583X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0168-583X(87)90148-0
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  • 10
    Electronic Resource
    Electronic Resource
    Double blind controlled phase III multicenter clinical trial with interferon gamma in rheumatoid arthritis (1992)
    Springer
    Rheumatology international 12 (1992), S. 175-185 
    Details
    ISSN: 1437-160X
    Keywords: Interferon gamma ; Rheumatoid arthritis ; Controlled clinical trial ; Multicenter
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary The controlled clinical trial reported here is part of a multicenter clinical and basic research project, sponsored by the German Federal Minister of Science and Technology, directed by a standing commission of the president of the Max-Planck-Gesellschaft, and coordinated by the Max-Planck-Institut für Biochemie, München. Overall, 249 patients with rheumatoid arthritis (RA) were enrolled by 16 participating hospitals. In addition to NSAID treatment, patients were randomly given either interferon gamma (IFN-γ) or placebo. In the IFN-γ group, 107 patients were evaluated and in the control group, 116 patients were evaluated. The response rate after 3 months of treatment, according to joint pain indexes, was significantly higher in the IFN-γ group with an error probability of 1%. IFN-γ was able to reduce the quantity of corticosteroids administered. Compared with the control group, the IFN-γ group benefited considering all parameters measured. Most important side effects were transient fever and transient influenza-like symptoms; all other adverse events were comparable in both groups.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00302149
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