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  • 2000-2004  (14)
  • 1985-1989  (15)
  • 2001  (14)
  • 1986  (15)
  • 1
    Electronic Resource
    Electronic Resource
    Surface energy of amorphous carbon films containing iron (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7814-7819 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Iron containing diamond-like amorphous carbon (a-C:Fe) films were deposited by filtered cathodic vacuum arc technique. The influences of Fe content and substrate bias on the surface energy of the films were investigated. The surface energy of a-C:Fe films was determined by the contact angle measurement. Atomic force microscopy, Raman spectroscopy, and x-ray induced photoelectron spectroscopy were employed to analyze the origin of the variation of surface energy with various Fe content and substrate bias. It is found that the contact angle for water increases significantly after incorporating Fe into the films and the films become hydrophobic. The roughness of these films has no effect on the contact angle. The surface energy is reduced from 42.8 to 25 dyne/cm after incorporating Fe into the a-C film (10% Fe in the target), which is due to the reduction of both dispersive and polar component. The reduction in dispersive component is ascribed to the decrease of atomic density of the a-C:Fe films due to the increase in sp2 bonded carbon. When sp2 content increases to some extent, the atomic density remains constant and hence dispersive component does not change. The absorption of oxygen on the surface plays an important role in the reduction of the polar component for the a-C:Fe films. It is proposed that such network as (Cn–O–Fe)–O–(Fe–O–Cn) may be formed and responsible for the reduction of polar component. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1375808
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of annealing on the microstructure of sintered Nd-Fe-B magnets (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2244-2246 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A transmission electron microscopy study of sintered Nd-Fe-B magnets after annealing above 650 °C shows the formation of a thin intergranular Nd-rich layer extending to pockets of polycrystalline fcc Nd crystals. The grain boundary phase acts as a pinning site for the magnetic domain walls and is necessary for good magnetic hardening. On the other hand, the Nd1+εFe4B4 phase is an unavoidable product of the sintering process but need not be present for good coercivity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336366
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  • 3
    Electronic Resource
    Electronic Resource
    Fiber-optic liquid contact measurements in pool boiling (1986)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 57 (1986), S. 3043-3047 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Two optical techniques for use in detecting liquid contacts in film and transition boiling regimes were developed. The first optical method involves the measurements of liquid contacts on a high-temperature glass boiling surface in a transient experiment. The second technique utilizes a small fiber-optic probe mounted flush on a copper surface. Experiments have indicated the probe is sufficiently fast responding to provide accurate local measurements of liquid to solid contact in film and transition boiling regimes. The relationship between surface superheat and liquid contact time fraction was determined for both methods.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138989
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  • 4
    Electronic Resource
    Electronic Resource
    3-Hydroxy-3-methylglutaryl-coenzyme A reductase inhibitors. 4. Side-chain ester derivatives of mevinolin (1986)
    s.l. : American Chemical Society
    Journal of medicinal chemistry 29 (1986), S. 849-852 
    Details
    ISSN: 1520-4804
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jm00155a040
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  • 5
    Electronic Resource
    Electronic Resource
    Intermartensitic transformation and magnetic-field-induced strain in Ni52Mn24.5Ga23.5 single crystals (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1148-1150 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have found a complete thermoelastic intermartensitic transformation between modulated and unmodulated martensite in single-crystal Ni52Mn24.5Ga23.5. This intermartensitic transformation provides a much larger strain than that of the martensitic transformation. A giant switching-like strain of ±5.0% can be achieved by a small magnetic field of 0.2 T upon the intermartensitic transformation. In the modulated martensite, a large recoverable magnetic-field-induced strain of up to 1.2% has been obtained. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1396820
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  • 6
    Electronic Resource
    Electronic Resource
    X-ray photoelectron spectroscopy study of irradiation-induced amorphizaton of Gd2Ti2O7 (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1989-1991 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The radiation-induced evolution of the microstructure of Gd2Ti2O7, an important pyrochlore phase in radioactive waste disposal ceramics and a potential solid electrolyte and oxygen gas sensor, has been characterized using transmission electron microscopy and x-ray photoelectron spectroscopy. Following the irradiation of a Gd2Ti2O7 single crystal with 1.5 MeV Xe+ ions at a fluence of 1.7×1014 Xe+/cm2, cross-sectional transmission electron microscopy revealed a 300-nm-thick amorphous layer at the specimen surface. X-ray photoelectron spectroscopy analysis of the Ti 2p and O 1s electron binding energy shifts of Gd2Ti2O7 before and after amorphization showed that the main results of ion-irradiation-induced disorder are a decrease in the coordination number of titanium and a transformation of the Gd–O bond. These features resemble those occurring in titanate glass formation, and they have implications for the chemical stability and electronic properties of pyrochlores subjected to displacive radiation damage. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1402647
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  • 7
    Electronic Resource
    Electronic Resource
    Polymeric micromechanical components with tunable stiffness (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1700-1702 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a microstereolithographic technique that enables the manufacturing of polymeric components for microelectromechanical systems. Model microstructures were fabricated in the form of end-supported microbeams (10 μm in diameter), in order to characterize the mechanical properties of the produced structures at the micron scale. The flexural modulus of these microbeams was measured by atomic force microscopy, using cantilevers with attached metal spheres, and employed in a three-point bending geometry. Postfabrication treatment of the microstructures allows for the tailoring of their stiffness. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1400084
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  • 8
    Electronic Resource
    Electronic Resource
    MgB2 tunnel junctions and 19 K low-noise dc superconducting quantum interference devices (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3995-3997 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Point contact junctions made from two pieces of MgB2 can be adjusted to exhibit either superconductor-insulator-superconductor (SIS) or superconductor-normal metal–superconductor (SNS) current–voltage characteristics. The SIS characteristics are in good agreement with the standard tunneling model for s-wave superconductors, and yield an energy gap of (2.02±0.08) meV. The SNS characteristics are in good agreement with the predictions of the resistively-shunted junction model. DC superconducting quantum interference devices made from two SNS junctions yield magnetic flux and field noise as low as 4 μΦ0 Hz−1/2 and 35 fT Hz−1/2 at 19 K; Φ0 is the flux quantum. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1424465
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  • 9
    Electronic Resource
    Electronic Resource
    Matrix effects on the structural and optical properties of InAs quantum dots (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3681-3683 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InAs quantum dots (QDs) have been grown by molecular-beam epitaxy on different InGaAs or GaAs surface layers to investigate the effect of the matrix on the structural and optical properties of the QDs. The density of QDs directly grown on GaAs is 1.1×1010 cm−2, and increases to 2.3×1010 cm−2 for dots grown on a 1 nm InGaAs layer. Single-mirror light-emitting-diode (SMLED) structures with InAs QDs capped by InGaAs and grown on GaAs and InGaAs layers were fabricated to compare the electroluminescence efficiency between the two structures. The maximum external quantum efficiency for QDs on a GaAs structure is 1.1% while that for QDs on InGaAs is 1.3%. The corresponding radiative efficiency could be deduced to be 17.5% for QDs on GaAs and 21.5% for QDs on InGaAs, respectively. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1416162
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  • 10
    Electronic Resource
    Electronic Resource
    Molecular random access memory cell (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3735-3737 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electronically programmable memory devices utilizing molecular self-assembled monolayers are reported. The devices exhibit electronically programmable and erasable memory bits compatible with conventional threshold levels and a memory cell applicable to a random access memory is demonstrated. Bit retention times 〉15 min have been observed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1377042
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