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An atomistic study of the GaAs–Pd interface (1986)

Kobayashi, Akiko ; Sakurai, T. ; Hashizume, T. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 59 (1986), S. 3448-3453

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The interface of GaAs–Pd was investigated on an atomic scale by a time-of-flight (TOF) atom-probe field ion microscope (FIM). It was found that Pd reacts strongly with Ga even at room temperature to form a stable PdGa compound. Depending upon heat treatment conditions, several types of Pd–(Ga, As) ternary compounds were also formed. A thin layer (less than a few monolayers) of As was quite often detected at the outermost surface layer when the interface was heated up to 400 °C. Above 400 °C only the most stable PdGa phase was observed at the interface. At a temperature range between 200 and 400 °C, the segregated Ga phase was also found beneath the As layer. The interfacial reactions can be understood by the following two processes: (1) Pd atoms diffuse into the GaAs substrate to form a stable Pd–Ga bond and (2) As, whose bonding with Ga is broken, becomes loose and migrates to the surface and desorbs.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.336813

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Letters to the edior (1986)

Cooke, T. D. V. ; Sakata, T. ; Manske, Paul R.

Hoboken, NJ [u.a.] : Wiley-Blackwell

Journal of Orthopaedic Research 4 (1986), S. 129-131

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ISSN: 0736-0266

Keywords: Life and Medical Sciences

Source: Wiley InterScience Backfile Collection 1832-2000

Topics: Medicine