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  • 2005-2009
  • 1990-1994  (8)
  • 1930-1934
  • 1990  (8)
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  • 2005-2009
  • 1990-1994  (8)
  • 1930-1934
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  • 1
    Electronic Resource
    Electronic Resource
    Thermal degradation of InP in open tube processing: deep-level photoluminescence (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2324-2330 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal processing of InP at temperatures above 500 °C is indispensable in the growth and device fabrication of InGaAsP alloy semiconductors for optoelectronic and microwave applications. Incongruous loss of P at these temperatures creates native defects and their complexes. The presence of such defects modifies the electrical and optical properties of the material resulting in poor device performance. In addition, native defects play a significant role in dopant diffusion which is a topic of current interest. We have measured deep-level photoluminescence (PL) on undoped InP after heat treatments at 500 and 550 °C in an open-tube processing system in different protective environments of powder InP, and Sn-InP melt together with an InP cover. In this paper we shall present the PL results which have bearing on the question of defects. We find that (1) the Sn-InP melt provides better protection in preserving the overall luminescence in InP; (2) the deep-level PL related to defects has at least two components in the virgin samples, viz., MnIn, and band C, which is a native defect complex related to VP; (3) a new defect appears in samples heated in a P-deficient environment; and (4) the enhancement in the deep-level luminescence intensity after heat treatment can be attributed to the excess defect concentrations existing under nonequilibrium conditions of an open-tube processing environment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346539
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    The effect of boundary conditions and shear rate on streak formation and breakdown in turbulent channel flows (1990)
    New York, NY : American Institute of Physics (AIP)
    Physics of Fluids 2 (1990), S. 1827-1838 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experiments in a horizontal channel indicate that low-speed/high-speed streaks form in the region very close to the interface if shear is imposed on the liquid surface by the motion of a gas. They also form at the wall. Even though the boundary conditions at the wall and at the interface are different (no slip versus nearly free slip with regard to fluctuations), the main characteristics of the streaks appear similar. The spanwise spacing of the streaks when nondimensionalized using the local shear stress and kinematic viscosity is about 100 units whether the streaks are at the wall or at the liquid surface. The ejection and breakdown of the streaks also show qualitatively similar features. For example, the burst frequency appears to scale on local inner variables and the numerical values in nondimensionalized frequency units are about the same whether the bursts originate near the interface or the wall. A number of experiments have been done varying the shear rate at the interface to determine its role in streak formation and breakdown. From the present experiments it is concluded that the shear rate has the main influence on the phenomena and the effect of the boundary conditions is much less important.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.857656
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Anomalous capacitance-voltage behavior due to dopant segregation and carrier trapping in As-implanted polycrystalline silicon and silicided polycrystalline silicon gates (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2325-2327 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter discusses the anomalous capacitance-voltage characteristics of As-implanted polycrystalline silicon and amorphous Si gate metal-oxide-semiconductor (MOS) structures fabricated with and without a TiSi2 layer. The effects of gate bias and process parameters such as annealing temperature, process details of silicide formation, and polycrystalline silicon grain microstructure on the capacitance-voltage (C-V) characteristics have also been studied. It is shown that insufficient As redistribution at 800 °C, coupled with carrier trapping at polycrystalline silicon grain boundaries and dopant segregation in TiSi2, causes depletion effects in the polycrystalline silicon gate and in turn, the anomalous C-V behavior. The depletion tends to increase the "effective'' gate oxide thickness and thereby degrade MOS device performance. Higher temperature anneals (≥900 °C) are sufficient to achieve degenerate doping in the polycrystalline silicon gates and avoid the depletion effects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102908
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Identification of a Novel Esterase in Human Breast Cyst Fluid (1990)
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 586 (1990), S. 0 
    Details
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1749-6632.1990.tb17808.x
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Evidence for TRM domain wall moments? (1990)
    Oxford, UK : Blackwell Publishing Ltd
    Geophysical journal international 102 (1990), S. 0 
    Details
    ISSN: 1365-246X
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences
    Notes: Multidomain ferro- and ferrimagnets carrying a thermoremanent magnetization (TRM) display a maximum in remanent magnetization just below the Curie temperature Tc when continuously demagnetized in zero field. We interpret this demagnetization peak to be indicative of the presence of TRM domain wall moments that grow in a small temperature interval (near Tc) upon heating where the domain wall volume increases at a rate faster than the decrease in spontaneous magnetization Msp. Hysteresis measurements in the vicinity of Tc on a single crystal of magnetite show that the spontaneous magnetization may be orders of magnitude smaller than the strong field magnetization measured in Ms/T curves. Micromagnetic calculations using experimentally determined Msp/T data suggest that the single domain (SD) threshold for magnetite can increase by more than an order of magnitude from room temperature to just below Tc in support of the domain wall moment model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-246X.1990.tb04471.x
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  • 6
    Electronic Resource
    Electronic Resource
    Diffusion of Au in amorphous Zr x Ni100−x alloys studied by Rutherford Backscattering Spectrometry (1990)
    Springer
    Applied physics 50 (1990), S. 365-368 
    Details
    ISSN: 1432-0630
    Keywords: 66.30h ; 62.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The diffusion coefficients (D) of Au in three binary amorphous Zr x Ni100−x (x=61, 65, and 67) alloys were measured in the temperature range 549–623 K using the technique of the Rutherford Backscattering Spectrometry (RBS). The D values were found to lie in the range 1.0×10−21–9.0×10−20 m2s−1 for different alloys. The activation energy (Q) was calculated in each case on the basis of an observed Arrhenius temperature dependence of D. The activation energy was found to scale with the crystallization temperature (T x) of the alloy. Other published measurements for Au diffusion in amorphous Zr-Ni alloys also appear to follow the scaling relation between Q and T x.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323592
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  • 7
    Electronic Resource
    Electronic Resource
    Some bianchi type II universes with special free-gravitational fields (1990)
    Springer
    Astrophysics and space science 167 (1990), S. 81-91 
    Details
    ISSN: 1572-946X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The paper considers a homogeneous Bianchi type II universe. Under each of the conditionsC hijk C hijk =0 and* C hijk C hijk =0 different types of models have been studied and their physical and kinematical properties have been discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00642065
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  • 8
    Electronic Resource
    Electronic Resource
    The distribution of some serum protein and red cell enzyme polymorphisms in the Koch ethnic group of west Bengal, India (1990)
    Springer
    Journal of human genetics 35 (1990), S. 253-256 
    Details
    ISSN: 1435-232X
    Keywords: mongoloid population ; blood genetic markers ; haptoglobin ; transferrin and Gc subtypes ; phosphoglucomutase subtypes ; Poliya-Deshi ; Tiyor
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Summary Three populations (Poliya, Deshi, and Tiyor) of the Koch ethnic group have been studied for the distribution of three serum protein and four red cell enzyme polymorphisms. There was no significant difference in the allelic frequencies of these systems in the three populations of the Koch ethnic group. The overall gene frequencies were as follows:Hp 1, 0.21;Gc 1F, 0.34;Gc 1s, 0.36;Gc 2, 0.30;Tf C1, 0.66;Tf C2, 0.26;Tf C3, 0.001;Tf D, 0.06;GLO 1, 0.21;PGI 2, 0.04;AK 2, 0.01;PGM 1+, 0.80;PGM 1−, 0.06;PGM 2+, 0.11 andPGM 2−, 0.02. The phenotypic distribution at all the loci was at Hardy-Weinberg equilibrium.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01876854
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    Paper (German National Licenses)
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