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  • 1995-1999  (2)
  • 1990-1994  (4)
  • 1950-1954
  • 1998  (2)
  • 1991  (4)
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  • 1995-1999  (2)
  • 1990-1994  (4)
  • 1950-1954
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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1329-1331 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CdSe quantum dots on ZnSe, grown by molecular beam epitaxy and formed during reorganization of an initially uniform film by thermal activation, are microstructurally elucidated in cross section and plan view, using transmission electron microscopy. In diffraction contrast, an almost uniform wetting layer is clearly visible. Dark contrast features with a distinctly larger extension into growth direction mark the location of quantum dots. Individual quantum dots can be identified in high-resolution imaging both by lattice expansion and contrasts arising from their strain fields. Plan-view images show the coexistence of two classes of quantum dots with an average lateral size of ≤10 nm (area density 100 μm−2) and 10–50 nm (20 μm−2), respectively. The shape of the larger entities is pyramidlike. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 785-787 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ordering of Cu and In atoms in near-stoichiometric CuInS2 epitaxial films grown on Si (111) by molecular beam epitaxy was studied by transmission electron microscopy. Nonchalcopyrite ordering of the metal atoms in CuInS2 is observed, which is identified as CuAu-type ordering. Sharp spots in electron diffraction patterns reveal the ordered Cu and In atom planes alternating along the [001] direction over a long range. High-resolution electron microscopy confirms this ordering. The CuAu-ordered structure coexists with the chalcopyrite ordered structure, in agreement with theoretical prediction. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Oxford [u.a.] : International Union of Crystallography (IUCr)
    Acta crystallographica 47 (1991), S. 2214-2216 
    ISSN: 1600-5759
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    The European physical journal 341 (1991), S. 101-105 
    ISSN: 1434-601X
    Keywords: 36.10.Gv
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Absolute pionic x-ray intensities have been measured for Mg and Fe. The accuracy achieved was 2% of the line intensity for the most prominent transitions. In the Balmer series of Mg and the Paschen series of Fe the crossover transitions were found to be even more attenuated than the transitions between circular states, as deduced, for example, by comparison with muonic atoms; no crossover transitions were observed in the Fe Balmer series. According to cascade calculations based on the experimental intensities more than half of the pions are absorbed in Fe already from levels with principal quantum numbern〉17 by strong interaction.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    Journal of radioanalytical and nuclear chemistry 152 (1991), S. 199-206 
    ISSN: 1588-2780
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Energy, Environment Protection, Nuclear Power Engineering
    Notes: Abstract The dissolution behaviour of two alloys, which represent the metallic precipitates, occurring in the dissolution step of a nuclear reprocessing plant was investigated. The solubility of these alloys, containing Mo, Ru, Rh and Pd, in HNO3-solutions is rather low and dissolution ceases after some time, caused by passivation. A significant acceleration of the dissolution rate takes place if ozone is passed through the alloy/HNO3-suspension, or if an electrolytic dissolver with or without an oxidation catalyst is used. Moreover, Ru can be separated as RuO4 by distillation.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Weinheim : Wiley-Blackwell
    Acta Polymerica 42 (1991), S. 639-645 
    ISSN: 0323-7648
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Physics
    Description / Table of Contents: Current carriers can cause currents after variation of the external electrical field, which depend on time just as relaxed dipols. The intensity and the position of the relaxation region and especially the nonlinear dependence between the stored charge and the external field are criterions for this. Blocking contacts cause relaxations of current carriers in poly(phenyl quinoxaline) and poly(ethylene terephthalate) samples. Detailed investigations of this phenomenon make possible informations on the density of the current carriers in the sample volume and on electrical properties of the contact region. Further ac-hopping is to be proved in poly(phenyl chinoxaline).
    Notes: Neben relaxierenden Dipolen können auch Stromträger zeitabhängige Ströme nach Änderung des äußeren elektrischen Feldes bewirken. Als Kriterien dafür werden neben Intensität und Lage des Relaxationsgebietes die nichtlineare Abhängigkeit der gespeicherten Ladung von der äußeren Feldstärke angesehen. In Poly(chinoxalin) und Poly(ethylenterephthalat) werden Stromträgerrelaxationen durch blockierende Kontakte verursacht. Detaillierte Untersuchungen erlauben Aussagen über die Stromträgerdichte im Probenvolumen und Eigenschaften der Kontaktschicht. In Poly(chinoxalin) ist weiterhin Wechselstromhopping nachweisbar.
    Additional Material: 13 Ill.
    Type of Medium: Electronic Resource
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